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    Light-emitting device with exciplex light-emitting layers
    21.
    发明授权
    Light-emitting device with exciplex light-emitting layers 有权

    公开(公告)号：US11158832B2

    公开(公告)日：2021-10-26

    申请号：US16878759

    申请日：2020-05-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takahiro Ishisone ,  Satoshi Seo ,  Yusuke Nonaka ,  Nobuharu Ohsawa

    IPC: H01L51/50 ,  H01L51/00

    Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.

    Semiconductor device and method for manufacturing semiconductor device
    22.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11152513B2

    公开(公告)日：2021-10-19

    申请号：US16643453

    申请日：2018-08-24

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

    Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

    Semiconductor device and method for manufactring semiconductor device
    24.
    发明授权
    Semiconductor device and method for manufactring semiconductor device 有权

    公开(公告)号：US10741679B2

    公开(公告)日：2020-08-11

    申请号：US15947902

    申请日：2018-04-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

    IPC: H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/06 ,  H01L21/8258

    Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

    Method for manufacturing semiconductor device
    25.
    发明授权
    Method for manufacturing semiconductor device 有权

    公开(公告)号：US10586869B2

    公开(公告)日：2020-03-10

    申请号：US14803483

    申请日：2015-07-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

    IPC: H01L29/786 ,  H01L29/04 ,  H01L23/552 ,  H01L23/00 ,  H01L29/66

    Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

    Semiconductor device
    28.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09530895B2

    公开(公告)日：2016-12-27

    申请号：US14615122

    申请日：2015-02-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu

    IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/42376 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

    Abstract: To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.

    Abstract translation: 抑制包括氧化物半导体的半导体器件中的导通电流的降低。 半导体器件包括含有硅的绝缘膜，绝缘膜上的氧化物半导体膜，在氧化物半导体膜上含有硅的栅极绝缘膜，位于栅极绝缘膜之上并与至少氧化物半导体膜重叠的栅电极 ，以及与氧化物半导体膜电连接的源电极和漏电极。 在半导体器件中，与至少栅电极重叠的氧化物半导体膜包括从绝缘膜的界面分布的硅的浓度低于或等于1.1at的区域。 ％。 此外，除了该区域之外，氧化物半导体膜的剩余部分中所含的硅的浓度低于该区域中所含的硅的浓度。

    Semiconductor device
    30.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09035305B2

    公开(公告)日：2015-05-19

    申请号：US14496500

    申请日：2014-09-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

    IPC: H01L29/78 ,  H01L29/12 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

    Abstract translation: 降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。 因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。 杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。 氧化物半导体中的氢被吸引到绝缘膜中的缺陷。 通过氢气的存在使绝缘膜中的缺陷稳定。

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