公开(公告)号：US11631714B2

公开(公告)日：2023-04-18

申请号：US17128163

申请日：2020-12-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chae Hon Kim ,  So Ra Lee

IPC: H01L27/15 ,  H01L33/48 ,  H01L33/30

Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

公开(公告)号：US11621370B2

公开(公告)日：2023-04-04

申请号：US17328498

申请日：2021-05-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park ,  So Ra Lee

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  G09G3/32 ,  G09G3/20 ,  F21S6/00 ,  F21Y115/10 ,  F21W107/30 ,  F21W106/00

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

公开(公告)号：US11189755B2

公开(公告)日：2021-11-30

申请号：US16789215

申请日：2020-02-12

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Chae Hon Kim ,  Chang Youn Kim ,  Jae Hee Lim

IPC: H01L33/36 ,  H01L33/40 ,  H01L33/32 ,  H01L23/00 ,  H01L33/10 ,  H01L33/60 ,  H01L33/46 ,  H01L33/00 ,  H01L33/22 ,  H01L33/20

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

公开(公告)号：US10749078B2

公开(公告)日：2020-08-18

申请号：US15811900

申请日：2017-11-14

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Chae Hon Kim ,  Chang Youn Kim ,  Jae Hee Lim

IPC: H01L33/36 ,  H01L33/60 ,  H01L33/40 ,  H01L33/32 ,  H01L33/46 ,  H01L33/00 ,  H01L33/22 ,  H01L33/20

Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.

公开(公告)号：US09853182B2

公开(公告)日：2017-12-26

申请号：US14467470

申请日：2014-08-25

Applicant: SEOUL VIOSYS CO., LTD. ,  MITSUBISHI CHEMICAL CORPORATION

Inventor： Seung Kyu Choi ,  Chae Hon Kim ,  Jung Whan Jung ,  Ki Bum Nam ,  Kenji Shimoyama ,  Kaori Kurihara

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.

公开(公告)号：US20170069790A1

公开(公告)日：2017-03-09

申请号：US15255711

申请日：2016-09-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seung Kyu Choi ,  Hee Sub Lee ,  Soon Ho Ahn ,  Chae Hon Kim ,  Su Youn Hong

IPC: H01L33/16 ,  H01L33/14 ,  H01L33/04

CPC classification number: H01L33/16 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32

Abstract: A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.

Abstract translation: 发光器件包括：包括氮化镓的衬底，以及设置在衬底上的半导体层，所述半导体层包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和p型 设置在有源层上的氮化物半导体层，其中限定在基板的晶体生长面与其m面之间的角度在3.5°至6°的范围内。

公开(公告)号：US11843076B2

公开(公告)日：2023-12-12

申请号：US18130063

申请日：2023-04-03

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun Baek ,  Ji Hun Kang ,  Chae Hon Kim ,  Ji Hoon Park ,  So Ra Lee

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  G09G3/32 ,  G09G3/20 ,  F21S6/00 ,  F21Y115/10 ,  F21W107/30 ,  F21W106/00

CPC classification number: H01L33/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/0753 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  F21S6/003 ,  F21W2106/00 ,  F21W2107/30 ,  F21Y2115/10 ,  G09G2300/0452 ,  G09G2320/0666

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

公开(公告)号：US11658263B2

公开(公告)日：2023-05-23

申请号：US17193443

申请日：2021-03-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ji Hoon Park ,  Ji Hun Kang ,  Chae Hon Kim ,  Yong Hyun Baek ,  Hyo Shik Choi

IPC: H01L21/66 ,  H01L33/00

CPC classification number: H01L33/0095 ,  H01L22/20

Abstract: A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

公开(公告)号：US20210202567A1

公开(公告)日：2021-07-01

申请号：US17128163

申请日：2020-12-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chae Hon Kim ,  So Ra Lee

IPC: H01L27/15 ,  H01L33/30 ,  H01L33/48

Abstract: A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

公开(公告)号：US10559720B2

公开(公告)日：2020-02-11

申请号：US16100783

申请日：2018-08-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Min Jang ,  Seon Min Bae ,  Jae Hee Lim ,  Chang Yeon Kim ,  Chae Hon Kim

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/64 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/20

Abstract: An LED includes a gallium nitride substrate, a first semiconductor layer disposed thereon, and a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer. A first contact layer includes an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part. A second contact layer is disposed on the mesa in contact with the second semiconductor layer. An upper insulation layer has first and second opening parts overlapping the first and second contact layers. First and second electrode pads are electrically connected to the first and second contact layers through the first and second opening parts. The LED can be driven at 150-315 A/cm2 and has a maximum junction temperature of 150-190° C.