公开(公告)号：US09379258B2

公开(公告)日：2016-06-28

申请号：US14493341

申请日：2014-09-22

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

Abstract: Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.

Abstract translation: 制造接触背面太阳能电池的制造方法。 在太阳能电池基板的背面上沉积基底掺杂剂源，场致发射掺杂源和发射极掺杂源。 对太阳能电池基板进行退火，形成对应于发射极掺杂源的发射极接触区域，对应于场发射极掺杂剂的场发射极区域和对应于基极掺杂剂源极的基极接触区域。 蚀刻基底掺杂剂源，场致发射体掺杂源和发射极掺杂源。 背面钝化层沉积在太阳能电池的背面上。 触点通过背面钝化层向发射极接触区域和基极接触区域开放。 图案化的基底金属化和图案化发射极金属化形成在具有与基极接触区域和发射极接触区域的电互连的太阳能电池的背面上。

公开(公告)号：US20150162486A1

公开(公告)日：2015-06-11

申请号：US14488263

申请日：2014-09-16

Applicant: Solexel, Inc.

Inventor： Heather Deshazer ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Mehrdad M. Moslehi ,  Solene Coutant

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions.

Abstract translation: 本申请提供了使用激光加工形成太阳能电池基座和发射极区域的有效和有效的结构和方法。 激光吸收剂钝化材料形成在太阳能电池基板上，并使用激光烧蚀进行图案化以形成基极和发射极区域。

公开(公告)号：US20150144190A1

公开(公告)日：2015-05-28

申请号：US14611982

申请日：2015-02-02

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Sam Tone Tor ,  Anthony Calcaterra

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02008 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，在交叉图案上形成导电发射器插头和基座插头，并且附接具有第二互补图案的基极和发射极的背板 在导电发射器和基座插头上形成电互连。

公开(公告)号：US20150132931A1

公开(公告)日：2015-05-14

申请号：US14321802

申请日：2014-07-01

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Mehrdad M. Moslehi ,  Sean M. Seutter ,  Mohammed Islam ,  Anand Deshpande

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for thermal processing of a silicon substrate wherein first a silicon substrate is heated to an idle load temperature in the range of approximately 700° to 900° C. The silicon substrate is then heated to a temperature in the range of approximately 975° to 1200° C. in less than approximately 20 minutes. After thermal processing, the silicon substrate is cooled to an idle unload temperature in the range of approximately 700° to 900° C. in less than approximately 20 minutes.

Abstract translation: 一种用于硅衬底的热处理的方法，其中首先将硅衬底加热至大约700°至900°C范围内的空载负载温度。然后将硅衬底加热至约975°至 1200℃，小于约20分钟。 在热处理之后，硅基板在小于约20分钟内被冷却到约700℃至900℃的空载卸载温度。

公开(公告)号：US20150129031A1

公开(公告)日：2015-05-14

申请号：US14539978

申请日：2014-11-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的M1金属层，后侧与设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池的背面电绝缘底板，所述背板片包括多个通孔，所述多个通孔使得所述M1层的背面板下方的部分露出; 以及与背板接触的M2层，M2层由包括5-250μm的厚度的预制金属箔材料制成，M2层通过导电孔中的通孔与M1层电连接 底板。

公开(公告)号：US20150101662A1

公开(公告)日：2015-04-16

申请号：US14325356

申请日：2014-07-07

Applicant: Solexel, Inc.

Inventor： Sean M. Seutter ,  Mehrdad M. Moslehi

IPC: H01L31/0216 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: Stable surface passivation on a crystalline silicon substrate is provided by forming a more heavily doped region as a front surface field and/or a doped dielectric layer under a passivation layer on the silicon substrate surface. A passivation layer is deposited on the front surface field and/or doped dielectric layer.

Abstract translation: 通过在硅衬底表面的钝化层下面形成作为前表面场和/或掺杂介质层的更重掺杂区域来提供晶体硅衬底上的稳定表面钝化。 钝化层沉积在前表面场和/或掺杂介电层上。