Splitting device and the methods of formation thereof

    公开(公告)号:US20180341061A1

    公开(公告)日:2018-11-29

    申请号:US15607153

    申请日:2017-05-26

    Abstract: A power balancing device includes first, second, and third power splitting devices on a semiconductor substrate. The first power splitting device includes an input, a first output, and a second output. A ratio of the power outputs at the first and second outputs is a first ratio. The second power splitting device includes third and fourth outputs and an input coupled to the first output. A ratio of the power outputs at the third and fourth outputs is a second ratio. The third power splitting device includes a fifth and sixth output and an input coupled to the second output. A ratio of the power outputs at the fifth and sixth outputs is a third ratio. The first, second, and third ratios are substantially similar. The input of the first power splitting device and the third and sixth outputs make the input and outputs respectively of the power balancing device.

    INTEGRATED OPTICAL MODULATOR OF THE MACH-ZEHNDER TYPE
    29.
    发明申请
    INTEGRATED OPTICAL MODULATOR OF THE MACH-ZEHNDER TYPE 审中-公开
    MACH-ZEHNDER类型的集成光学调制器

    公开(公告)号:US20170003571A1

    公开(公告)日:2017-01-05

    申请号:US15068704

    申请日:2016-03-14

    Abstract: An integrated modulator of the Mach-Zehnder type includes two optical arms containing waveguides with PN junctions and biasing circuits for reverse biasing the PN junctions in response to a control signal. The two optical arms are situated within a semiconductor substrate of a first element that also has an interconnection region. The biasing circuits are situated, in part, within a substrate of a second element that also contains an interconnection region. The first and second elements are rigidly attached to each other via their respective interconnection regions.

    Abstract translation: Mach-Zehnder型集成调制器包括两个含有PN结的波导的光学臂和用于响应控制信号反向偏置PN结的偏置电路。 两个光学臂位于也具有互连区域的第一元件的半导体衬底内。 偏置电路部分地位于也包含互连区域的第二元件的衬底内。 第一和第二元件通过其相应的互连区域彼此刚性连接。

    METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER
    30.
    发明申请
    METHOD FOR MANUFACTURING BAW RESONATORS ON A SEMICONDUCTOR WAFER 有权
    在半导体波形上制造BAW谐振器的方法

    公开(公告)号:US20140075726A1

    公开(公告)日:2014-03-20

    申请号:US14084394

    申请日:2013-11-19

    Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

    Abstract translation: 一种制造晶片的方法,其上形成有谐振器,每个谐振器包括在半导体衬底上方的一叠层,其从衬底表面依次包括:布拉格反射镜; 由具有与所有其它堆叠层相反的符号的声速的温度系数的材料制成的补偿层; 和压电谐振器,该方法包括以下连续步骤:a)沉积补偿层; 和b)由于沉积方法而减小补偿层的厚度不等式,使得该层在每个谐振器的电平上具有相同的厚度,优于2%以内,优选在1%以内。

Patent Agency Ranking