公开(公告)号：US12205963B2

公开(公告)日：2025-01-21

申请号：US17842816

申请日：2022-06-17

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Kyeongsu Ko ,  Sanggab Kim ,  Hongsick Park ,  Sangwoo Sohn ,  Dokeun Song ,  Sangwon Shin ,  Sukyoung Yang ,  Dongmin Lee

IPC: H01L27/12

Abstract: A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.

公开(公告)号：US12002868B2

公开(公告)日：2024-06-04

申请号：US17113777

申请日：2020-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L27/12 ,  H01L29/40 ,  H01L29/49 ,  H10K10/82 ,  H10K10/84 ,  H10K71/00 ,  H10K71/20

CPC classification number: H01L29/458 ,  H01L27/124 ,  H01L29/401 ,  H01L29/4908 ,  H10K10/82 ,  H10K10/84 ,  H10K71/236 ,  H10K71/621 ,  Y10S438/937

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

公开(公告)号：US11943982B2

公开(公告)日：2024-03-26

申请号：US17398336

申请日：2021-08-10

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Hyunwoo Kang ,  Hyunah Sung ,  Dokeun Song ,  Sukyoung Yang ,  Yunjong Yeo ,  Dongmin Lee ,  Donghyeok Lee ,  Shin Il Choi

IPC: H10K59/131 ,  H10K59/12

CPC classification number: H10K59/1315 ,  H10K59/1201

Abstract: A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate insulation layer in the display area, a first signal line in the same layer as the first gate line in a non-display area and including the same material as that of the first gate line including molybdenum, a second gate insulation layer on the first gate line and the first signal line, a second gate line on the second gate insulation layer in the display area, and a second signal line in the same layer as the second gate line in the non-display area and including the same material as that of the second gate line including aluminum or an aluminum alloy. A width of the first signal line is greater than a width of the second signal line.

公开(公告)号：US11844256B2

公开(公告)日：2023-12-12

申请号：US17363496

申请日：2021-06-30

Applicant: Samsung Display Co., Ltd.

Inventor： Dongmin Lee ,  Taewook Kang ,  Hyunah Sung ,  Sukyoung Yang ,  Dokeun Song ,  Hyuneok Shin

IPC: H01L29/08 ,  H10K59/131 ,  C22C21/00 ,  H10K59/126 ,  H10K59/121 ,  H10K77/10 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H10K59/12 ,  H10K102/00

CPC classification number: H10K59/1315 ,  C22C21/00 ,  H10K59/126 ,  H10K59/1213 ,  H10K59/1216 ,  H10K77/111 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1222 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/78675 ,  H10K59/1201 ,  H10K2102/311

Abstract: A display device includes a base substrate, a buffer layer disposed on the base substrate, an active layer disposed on the buffer layer, a first gate insulation layer disposed on the active layer, a first conductive layer disposed on the first gate insulation layer and which is a single-layer including an aluminum alloy, a second gate insulation layer disposed on the first conductive layer, a second conductive layer disposed on the second gate insulation layer and which is a single-layer including an aluminum alloy, an insulation interlayer disposed on the second conductive layer, and a third conductive layer disposed on the insulation interlayer, directly contacting the first conductive layer through a first gate contact hole defined in the insulation interlayer and the second gate insulation layer, and directly contacting the second conductive layer through a second gate contact hole defined in the insulation interlayer.

公开(公告)号：US20230395728A1

公开(公告)日：2023-12-07

申请号：US17845301

申请日：2022-06-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongoh Seo ,  Janghyun Kim ,  Jongjun Baek ,  Dongmin Lee

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121 ,  H10K59/80

CPC classification number: H01L29/78696 ,  H01L29/6675 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/873

Abstract: Provided are a thin-film transistor substrate, a manufacturing method thereof, and a display apparatus. The thin-film transistor substrate includes: a substrate; a buffer layer on the substrate; a semiconductor layer arranged on the buffer layer and including a first conductive area, a second conductive area, and a channel area between the first conductive area and the second conductive area; a first dopant doped in an upper portion of the channel area at a first concentration; a second dopant doped in a lower portion of the channel area at a second concentration and being of a different type from a type of the first dopant; a gate insulating layer covering the semiconductor layer; and a gate electrode overlapping the channel area in a plan view and disposed on the gate insulating layer.

公开(公告)号：US20210013281A1

公开(公告)日：2021-01-14

申请号：US16877735

申请日：2020-05-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongsung Lee ,  Jihwan Kim ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee ,  Yeonhee Jeon ,  Jonghoon Choi ,  Byungkyu Son ,  Seunghyun Jang

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

公开(公告)号：US09891484B2

公开(公告)日：2018-02-13

申请号：US15070707

申请日：2016-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Dongmin Lee ,  Chanwoo Yang ,  Juhyun Lee ,  Changoh Jeong

IPC: H05K1/02 ,  H05K1/09 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12 ,  H01L33/42

CPC classification number: G02F1/13439 ,  G02F1/133377 ,  G02F1/133707 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2201/121 ,  G02F2202/16 ,  G02F2202/36 ,  H01B1/02 ,  H01L27/124 ,  H01L33/42

Abstract: A transparent conductive film includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The second conductive layer includes silver (Ag) and an alloy element, the alloy element has a smaller atomic radius than the Ag, and a thickness of the second conductive layer is in a range of 20 Å to 60 Å.

公开(公告)号：US09070605B2

公开(公告)日：2015-06-30

申请号：US14477626

申请日：2014-09-04

Applicant: Samsung Display Co., Ltd.

Inventor： Honglong Ning ,  Byeong-Beom Kim ,  Kyungseop Kim ,  Joonyong Park ,  Changoh Jeong ,  Sangwon Shin ,  Dongmin Lee

IPC: H01L21/77 ,  H01L27/12 ,  H01L33/42 ,  H01L33/00 ,  H01L29/45 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/77 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693 ,  H01L33/0041 ,  H01L33/42

Abstract: A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion. The display apparatus further includes a gate insulating layer disposed on the channel portion, a gate electrode disposed on the gate insulating layer, and a protective layer disposed on the gate electrode and the buffer layer and having a contact hole. The display apparatus further includes a transparent electrode overlapping a portion of the protective layer and electrically connected to one of the source electrode and the drain electrode through the contact hole. The transparent electrode includes a transparent metal layer and a transparent conductive oxide layer overlapping the transparent metal layer.

Abstract translation: 显示装置包括基底基板和设置在基底基板上的缓冲层。 显示装置还包括设置在缓冲层上的氧化物半导体层，包括源电极，漏电极和沟道部分。 显示装置还包括设置在通道部分上的栅极绝缘层，设置在栅极绝缘层上的栅极电极和设置在栅电极和缓冲层上并具有接触孔的保护层。 显示装置还包括与保护层的一部分重叠并通过接触孔电连接到源电极和漏极之一的透明电极。 透明电极包括透明金属层和与透明金属层重叠的透明导电氧化物层。

公开(公告)号：US12193271B2

公开(公告)日：2025-01-07

申请号：US17715553

申请日：2022-04-07

Applicant: Samsung Display Co., Ltd.

Inventor： Dongmin Lee ,  Jaewoo Jeong ,  Janghyun Kim ,  Jongoh Seo ,  Byungsoo So

IPC: H10K59/121 ,  H10K71/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

Abstract: A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.

公开(公告)号：US20240365596A1

公开(公告)日：2024-10-31

申请号：US18425686

申请日：2024-01-29

Applicant: Samsung Display Co., Ltd.

Inventor： Joonyong Park ,  Hyuneok Shin ,  Sukyoung Yang ,  Dongmin Lee ,  Yung Bin Chung

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A display panel includes a pixel defining layer in which a light emitting opening is defined, a barrier wall which is on the pixel defining layer and electrically conductive, the barrier wall including a first lower layer which is electrically conductive, a first upper layer which faces the first lower layer and is electrically conductive, a second lower layer between the first lower layer and the first upper layer, the second lower layer defining an opening therein which is adjacent to the light emitting opening, and the first upper layer electrically connected to the first lower layer through the opening of the second lower layer, and a light emitting element including a first electrode, an emission pattern and a second electrode in the light emitting opening, and the second electrode contacting the first lower layer of the barrier wall.