公开(公告)号：US20170154897A1

公开(公告)日：2017-06-01

申请号：US15427696

申请日：2017-02-08

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun KIM ,  Yoon Ho KHANG ,  Dong-Hoon LEE ,  Sang Ho PARK ,  Se Hwan YU ,  Cheol Kyu KIM ,  Yong-Su LEE ,  Sung Haeng CHO ,  Chong Sup CHANG ,  Dong Jo KIM ,  Jung Kyu LEE

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

公开(公告)号：US20150194534A1

公开(公告)日：2015-07-09

申请号：US14666461

申请日：2015-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung KIM ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

公开(公告)号：US20250089426A1

公开(公告)日：2025-03-13

申请号：US18956923

申请日：2024-11-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin Yeong KIM ,  Mi Jin PARK ,  Sang Ho PARK ,  Tae Hoon YANG ,  Sung Jin LEE

IPC: H01L33/62 ,  G09G3/20 ,  G09G3/32 ,  H01L25/075 ,  H01L25/16 ,  H01L33/20 ,  H01L33/38 ,  H10K59/12 ,  H10K59/122 ,  H10K59/131 ,  H10K59/179

Abstract: A display device includes a substrate including a display area and a non-display area, a pixel located in the display area, a pad unit on one side of the non-display area, and a driver connected to the pixel. The pixel includes a first insulating layer, a first light emitting element on the first insulating layer, a second insulating layer on the first light emitting element and exposing one end portion and another end portion of the first light emitting element, a first contact electrode on the second insulating layer and connected to the one end portion of the first light emitting element, and a second contact electrode on the second insulating layer and connected to the other end portion of the first light emitting element. The pad unit includes a pad metal layer, a first pad insulating layer, a second pad insulating layer, and a pad electrode.

公开(公告)号：US20240413248A1

公开(公告)日：2024-12-12

申请号：US18808905

申请日：2024-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung KIM ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H10K59/121

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20240120454A1

公开(公告)日：2024-04-11

申请号：US18544371

申请日：2023-12-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin Yeong KIM ,  Mi Jin PARK ,  Sang Ho PARK ,  Tae Hoon YANG ,  Sung Jin LEE

IPC: H01L33/62 ,  G09G3/32 ,  H01L25/075 ,  H01L25/16 ,  H01L33/20 ,  H01L33/38 ,  H10K59/12 ,  H10K59/122 ,  H10K59/131 ,  H10K59/179

CPC classification number: H01L33/62 ,  G09G3/32 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/20 ,  H01L33/38 ,  H10K59/12 ,  H10K59/122 ,  H10K59/131 ,  H10K59/179 ,  G09G3/2003 ,  G09G2300/0426 ,  G09G2300/0439

Abstract: A display device includes a substrate including a display area and a non-display area, a pixel located in the display area, a pad unit on one side of the non-display area, and a driver connected to the pixel. The pixel includes a first insulating layer, a first light emitting element on the first insulating layer, a second insulating layer on the first light emitting element and exposing one end portion and another end portion of the first light emitting element, a first contact electrode on the second insulating layer and connected to the one end portion of the first light emitting element, and a second contact electrode on the second insulating layer and connected to the other end portion of the first light emitting element. The pad unit includes a pad metal layer, a first pad insulating layer, a second pad insulating layer, and a pad electrode.

公开(公告)号：US20230155083A1

公开(公告)日：2023-05-18

申请号：US17983290

申请日：2022-11-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyung June KIM ,  Ji Hyun MIN ,  Sang Ho PARK ,  Se Hyung CHO ,  Jang Bog JU

IPC: H01L33/58 ,  H01L25/16 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L25/167 ,  H01L33/507

Abstract: A display device including: a first electrode on a substrate, a second electrode spaced from the first electrode in a second direction, an optical layer on the first electrode and the second electrode, the optical layer including a first layer and a second layer, the second layer including a different material and having a different thickness from the first layer, and a plurality of light emitting elements on the optical layer, the first electrode, and the second electrode, wherein the optical layer includes a plurality of pair layers, each of the plurality of pair layers including the first layer and the second layer, and the first layer and the second layer are alternately stacked.

公开(公告)号：US20220093804A1

公开(公告)日：2022-03-24

申请号：US17544353

申请日：2021-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Do Hyung KIM ,  Gun Hee KIM ,  Hyeon Sik KIM ,  Sang Ho PARK ,  Joo Hee JEON

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L29/08

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

公开(公告)号：US20210335892A1

公开(公告)日：2021-10-28

申请号：US17148321

申请日：2021-01-13

Applicant: Samsung Display Co., Ltd.

Inventor： Jin Woo LEE ,  Sang Ho PARK ,  Tae Hoon YANG ,  Jin Yeong KIM ,  Jin Taek KIM ,  Soo Hyun MOON ,  Mi Jin PARK

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A display device includes a first substrate including a plurality of unit light emitting areas; a first electrode and a second electrode in each of the unit light emitting areas of the first substrate; a first insulation layer exposing one region of each of the first electrode and the second electrode; a light emitting element on the first insulation layer and having a first end and a second end in a length direction; light conversion patterns adjacent to the light emitting element, covering a portion of an upper surface of the light emitting element, and exposing the first and second ends of the light emitting element; a first contact electrode on the first electrode and connecting the one region of the exposed first electrode and the first end of the light emitting element; and a second contact electrode on the second electrode.

公开(公告)号：US20210305340A1

公开(公告)日：2021-09-30

申请号：US17266496

申请日：2019-05-22

Applicant: Samsung Display Co., LTD.

Inventor： Gun Hee KIM ,  Sang Ho PARK ,  Joo Hee JEON ,  Young-Cheol JEONG

IPC: H01L27/32 ,  H01L29/786 ,  G09G3/3291

Abstract: A display device includes: a substrate; and a transistor positioned on the substrate, wherein the transistor includes: a semiconductor layer; a gate electrode overlapping the semiconductor layer; a first gate contact overlapping layer overlapping a channel region where the gate electrode and the semiconductor layer are overlapped and in contact with the gate electrode; and a semiconductor contact overlapping layer overlapping the channel region and in contact with the semiconductor layer, and the first gate contact overlapping layer and the semiconductor contact overlapping layer are physically separated by a gap within the channel region.

公开(公告)号：US20180083211A1

公开(公告)日：2018-03-22

申请号：US15711121

申请日：2017-09-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Kyu LEE ,  Tae Hyun KIM ,  Sang Ho PARK ,  Dong Hwan SHIM ,  Seung Min LEE ,  Seung-Hwan CHO

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/0097 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2251/5338

Abstract: A display device includes: a substrate including a display area, a non-display area at which the image is not displayed and a first area including the display area, the non-display area including a bending area at which the display device is bendable between the first area and a second area; a first wire in the first area, the first wire and connected to the display area; a second wire in the second area; a protection layer in the first, second and bending areas, first and second contact holes in the protection layer and exposing the first and second wires; and a connection wire connected to the first wire, extended from the first area to traverse the bending area and connected to the second wire. The connection wire includes a plurality of conductive layers contacting each other, the plurality of conductive layers including a same material.