公开(公告)号：US10119811B2

公开(公告)日：2018-11-06

申请号：US15448325

申请日：2017-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Yoon Lee ,  Chan Hwang ,  Jeong Jin Lee

IPC: G01B11/14 ,  G01B11/27 ,  G01B11/00 ,  G03F9/00

Abstract: A method for measuring wafer alignment is provided. The method includes providing a plurality of first mark patterns extending in a first direction on a wafer, providing at least one second mark pattern on the first mark patterns such that it overlaps and intersects the first mark patterns, irradiating an optical signal onto the first mark patterns and the second mark pattern and obtaining coordinates of the second mark pattern by detecting signals from the second mark pattern.

公开(公告)号：US09747682B2

公开(公告)日：2017-08-29

申请号：US14940880

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin Lee ,  Chan Hwang ,  Seungyoon Lee

IPC: G06T7/00 ,  G03F7/20 ,  H04N5/225 ,  H04N5/33 ,  G06T7/174

CPC classification number: G06T7/001 ,  G03F7/70633 ,  G06T7/174 ,  G06T2207/10048 ,  G06T2207/10152 ,  G06T2207/30148 ,  G06T2207/30204 ,  H04N5/2256 ,  H04N5/332

Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.

公开(公告)号：US20240134290A1

公开(公告)日：2024-04-25

申请号：US18332238

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inbeom Yim ,  Junseong Yoon ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/706831 ,  G03F7/706837 ,  H01L22/20

Abstract: Provided are a method of selecting multi-wavelengths for overlay measurement, for accurately measuring overlay, and an overlay measurement method and a semiconductor device manufacturing method using the multi-wavelengths. The method of selecting multi-wavelengths for overlay measurement includes measuring an overlay at multiple positions on a wafer at each of a plurality of wavelengths within a set first wavelength range, selecting representative wavelengths that simulate the overlay of the plurality of wavelengths, from among the plurality of wavelengths, and allocating weights to the representative wavelengths, respectively.

公开(公告)号：US11635697B2

公开(公告)日：2023-04-25

申请号：US17234908

申请日：2021-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soon Hwan Cha ,  Chan Hwang ,  Woo Jin Jung

IPC: G03F7/20

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area. The controller generates a second mask pattern based on the first mask pattern and the first semiconductor substrate image, and provides the second mask pattern to the photolithography apparatus.

公开(公告)号：US20190157276A1

公开(公告)日：2019-05-23

申请号：US16233715

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok HA ,  Jae-hee Kim ,  Chan Hwang ,  Jong-hyuk Kim

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L27/10855 ,  H01L21/0273 ,  H01L21/31127 ,  H01L21/31144 ,  H01L27/10817 ,  H01L28/87 ,  H01L28/91

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts , selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US10204912B2

公开(公告)日：2019-02-12

申请号：US15826944

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok Ha ,  Jae-hee Kim ,  Chan Hwang ,  Jong-hyuk Kim

IPC: H01L27/108 ,  H01L21/311 ,  H01L21/027 ,  H01L49/02

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20160071255A1

公开(公告)日：2016-03-10

申请号：US14940880

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGJIN LEE ,  Chan Hwang ,  Seungyoon Lee

IPC: G06T7/00 ,  H04N5/33 ,  H04N5/225

CPC classification number: G06T7/001 ,  G03F7/70633 ,  G06T7/174 ,  G06T2207/10048 ,  G06T2207/10152 ,  G06T2207/30148 ,  G06T2207/30204 ,  H04N5/2256 ,  H04N5/332

Abstract: A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels.

Abstract translation: 一种用于测量覆盖层的方法包括接收使用具有第一波长的光捕获的第一覆盖标记的第一图像。 该方法包括接收使用具有不同于第一波长的第二波长的光捕获的第二重叠标记的第二图像。 该方法包括测量第一图像的中心部分和第二图像的中心部分之间的位移，其中第一和第二覆盖标记设置在不同的水平上。

公开(公告)号：US09281250B2

公开(公告)日：2016-03-08

申请号：US14539629

申请日：2014-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Hwa Oh ,  Jeong-Jin Lee ,  Chan Hwang

IPC: H01L21/66 ,  G01R31/26 ,  G09G5/377 ,  G06T7/00

CPC classification number: H01L22/12 ,  G03F7/70633 ,  G06T2207/10004 ,  G06T2207/30148 ,  G06T2215/16 ,  G09G5/377

Abstract: A method of detecting an asymmetric portion of an overlay mark includes forming a plurality of virtual overlay marks having a plurality of virtual asymmetric portions. The virtual asymmetric portions may have different sizes with respect to a reference model profile of a reference overlay mark. Virtual information with respect to each virtual overlay mark may be obtained. The virtual information of the virtual overlay marks may be compared with actual information of an actual overlay mark to identify virtual information of the virtual overlay mark corresponding to the actual information of the actual overlay mark. Thus, measuring the overlay of the actual overlay mark may be performed under than the actual asymmetric portion may be excluded from the actual overlay mark, so that the overlay may be accurately measured. As a result, errors may not be generated in a correcting process to a layer using the accurate overlay.

Abstract translation: 检测重叠标记的不对称部分的方法包括形成具有多个虚拟不对称部分的多个虚拟覆盖标记。 相对于参考叠加标记的参考模型轮廓，虚拟不对称部分可以具有不同的尺寸。 可以获得关于每个虚拟覆盖标记的虚拟信息。 可以将虚拟覆盖标记的虚拟信息与实际重叠标记的实际信息进行比较，以识别与实际覆盖标记的实际信息相对应的虚拟覆盖标记的虚拟信息。 因此，可以在实际叠加标记之外进行测量实际覆盖标记的叠加，而实际的不对称部分可以从实际覆盖标记中排除，从而可以准确测量覆盖。 结果，在使用准确覆盖层的层的校正处理中可能不会产生错误。