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公开(公告)号：US09905422B2
公开(公告)日：2018-02-27
申请号：US14984189
申请日：2015-12-30
发明人： Keunwook Shin , Minsu Seol , Hyeonjin Shin , Sangwon Kim , Seongjun Park
IPC分类号： H01L21/027 , H01L21/033 , H01L21/02
CPC分类号： H01L21/0332 , H01L21/02118 , H01L21/02274
摘要： A 2D material hard mask includes hydrogen, oxygen, and a 2D material layer having a layered crystalline structure. The 2D material layer may be a material layer including one of a carbon structure (for example, a graphene sheet) and a non-carbon structure.
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公开(公告)号：US11830952B2
公开(公告)日：2023-11-28
申请号：US17014127
申请日：2020-09-08
发明人： Minsu Seol , Hyeonjin Shin , Minseok Yoo , Minhyun Lee
IPC分类号： H01L29/786 , H01L29/41 , H01L29/417 , H01L29/24 , H01L29/66 , H01L29/45 , H01L29/06 , H01L21/02 , H01L21/8234 , H01L29/16
CPC分类号： H01L29/78696 , H01L21/02417 , H01L21/02568 , H01L21/823412 , H01L29/0665 , H01L29/1606 , H01L29/24 , H01L29/413 , H01L29/41733 , H01L29/45 , H01L29/66969
摘要： Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.
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公开(公告)号：US11508815B2
公开(公告)日：2022-11-22
申请号：US16928508
申请日：2020-07-14
发明人： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/10 , H01L21/02 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/78
摘要： Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.
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公开(公告)号：US11463023B2
公开(公告)日：2022-10-04
申请号：US17097232
申请日：2020-11-13
发明人： Jae-Young Kim , Kyungeun Byun , Minsu Seol , Hyeonjin Shin , Jeongmin Baik , Jinsung Chun , Byeonguk Ye
摘要： A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.
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公开(公告)号：US11281092B2
公开(公告)日：2022-03-22
申请号：US16689221
申请日：2019-11-20
发明人： Seungwon Lee , Minsu Seol , Dongwook Lee , Hyeonjin Shin
IPC分类号： G03F1/62
摘要： A pellicle for extreme ultraviolet lithography and a method of manufacturing the pellicle for extreme ultraviolet lithography are provided. The pellicle for extreme ultraviolet lithography includes a pellicle layer having a specific (or, alternatively, predetermined) thickness, a frame on an edge area of the pellicle layer and supporting the pellicle layer, and a boron implantation layer located between the pellicle layer and the frame. The boron implantation layer is spaced by a specific (or, alternatively, predetermined) distance inward from an outer periphery of the pellicle layer.
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公开(公告)号：US10770990B2
公开(公告)日：2020-09-08
申请号：US15589091
申请日：2017-05-08
发明人： Kyungeun Byun , Jaeyoung Kim , Minsu Seol , Hyeonjin Shin , Jeongmin Baik , Woojung Yang , Byeonguk Ye , Jaewon Lee , Jinpyo Lee , Kyeongnam Kim
IPC分类号： H02N1/04
摘要： A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.
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公开(公告)号：US10685844B2
公开(公告)日：2020-06-16
申请号：US16036113
申请日：2018-07-16
发明人： Sangwon Kim , Changsik Song , Dongcheol Jeong , Minsu Seol , Hyeonjin Shin , Dongwook Lee , Taewoo Kim , Juhyen Lee , Hyejin Cho
IPC分类号： H01L21/308 , H01L29/16 , C07B37/12 , G03F7/004 , H01L21/311 , G03F7/16 , G03F7/027 , H01L21/033 , G03F7/09 , C08L101/02 , B82Y30/00 , C07C15/20 , C07C39/14 , C07C63/337 , H01L29/66
摘要： Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.
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公开(公告)号：US20190033704A1
公开(公告)日：2019-01-31
申请号：US15946087
申请日：2018-04-05
发明人： Seongjun JEONG , Hyeonjin Shin , Sangwon Kim , Seongjun Park , Minsu Seol , Dongwook Lee , Yunseong Lee , Alum Jung
CPC分类号： G03F1/62 , G03F1/22 , G03F7/70008 , G03F7/70983
摘要： A pellicle composition for a photomask, a pellicle for a photomask, the pellicle for a photomask being formed from the pellicle composition, a method of forming the pellicle, a reticle including the pellicle, and an exposure apparatus for lithography including the reticle are provided. The pellicle composition includes: at least one selected from graphene quantum dots and a graphene quantum dot precursor, the graphene quantum dots having a size of about 50 nm or less; and a solvent.
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公开(公告)号：US10133176B2
公开(公告)日：2018-11-20
申请号：US14825792
申请日：2015-08-13
发明人： Minsu Seol , Sangwon Kim , Hyeonjin Shin , Seongjun Park , Yeonchoo Cho
摘要： A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material.
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公开(公告)号：US12002882B2
公开(公告)日：2024-06-04
申请号：US18157478
申请日：2023-01-20
发明人： Minhyun Lee , Minsu Seol , Yeonchoo Cho , Hyeonjin Shin
IPC分类号： H01L29/778 , H01L27/092 , H01L29/24 , H01L29/417 , H01L29/78 , H01L29/786
CPC分类号： H01L29/7788 , H01L27/092 , H01L29/24 , H01L29/41741 , H01L29/7831 , H01L29/78642
摘要： A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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