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    Process Chamber and Substrate Processing Apparatus Including the Same
    23.
    发明申请
    Process Chamber and Substrate Processing Apparatus Including the Same 审中-公开

    公开(公告)号：US20180366349A1

    公开(公告)日：2018-12-20

    申请号：US15848481

    申请日：2017-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/67 ,  H01L21/02

    Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

    Method and apparatus for purifying cleaning agent
    24.
    发明授权
    Method and apparatus for purifying cleaning agent 有权

    公开(公告)号：US09934959B2

    公开(公告)日：2018-04-03

    申请号：US14537318

    申请日：2014-11-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yong-Jhin Cho ,  Jung-Min Oh ,  Yongmyung Jun ,  Yongsun Ko ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/02

    CPC classification number: H01L21/02101 ,  H01L21/02057

    Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

    Apparatus and methods for treating a substrate
    26.
    发明授权
    Apparatus and methods for treating a substrate 有权
    用于处理基底的装置和方法

    公开(公告)号：US09534839B2

    公开(公告)日：2017-01-03

    申请号：US13707253

    申请日：2012-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

    IPC: F26B5/04 ,  H01L21/67

    CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

    Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

    Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。

    MANUFACTURING METHOD AND FLUID SUPPLY SYSTEM FOR TREATING SUBSTRATE
    27.
    发明申请
    MANUFACTURING METHOD AND FLUID SUPPLY SYSTEM FOR TREATING SUBSTRATE 有权
    用于处理基板的制造方法和流体供应系统

    公开(公告)号：US20130199051A1

    公开(公告)日：2013-08-08

    申请号：US13762952

    申请日：2013-02-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Min Oh ,  HyoSan Lee ,  YongSun Ko ,  KyoungSeob Kim ,  SeokHoon Kim ,  KunTack Lee ,  YongMyung Jun ,  Yong-Jhin Cho

    IPC: H01L21/02

    CPC classification number: H01L21/02101 ,  H01L21/3081 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67253

    Abstract: A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

    Abstract translation: 提供了一种用于处理基板的制造方法和流体供应系统。 用于处理基底的流体供应系统可以包括：供给干燥流体以干燥掺杂在基底上的漂洗溶液的基底干燥部分; 干燥流体分离部件，其在从所述基材干燥部分干燥所述基材的干燥过程期间将所述干燥流体和所述冲洗溶液彼此混合的混合流体，并将所述干燥流体与所述混合流体分离; 以及将干燥流体分离部分分离的干燥流体再供给到基板干燥部分的干燥流体供给部件。

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