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公开(公告)号：US10029332B2
公开(公告)日：2018-07-24
申请号：US14706546
申请日：2015-05-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-Hoo Kim , Il-Sang Lee , Yong-sun Ko , Chang-Gil Ryu , Kun-Tack Lee , Hyo-San Lee
IPC: H01L21/00 , B23K26/146 , B08B7/00 , B08B3/10 , C11D11/00 , H01L21/67 , H01L21/687
Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.
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2.发明授权公开(公告)号：US10668403B2
公开(公告)日：2020-06-02
申请号：US15482549
申请日：2017-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung-Min Oh , Ji-Hoon Jeong , Dong-Gyun Han , Kun-Tack Lee , Hyo-San Lee , Yong-Myung Jun
Abstract: A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.
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公开(公告)号：US10083829B2
公开(公告)日：2018-09-25
申请号：US15069994
申请日：2016-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Hoon Jeong , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee
CPC classification number: H01L21/02041 , H01L21/02057 , H01L21/02101 , H01L21/67017
Abstract: Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which a supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller.
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公开(公告)号：US10985036B2
公开(公告)日：2021-04-20
申请号：US15827144
申请日：2017-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-Hoo Kim , Sang-Jine Park , Yong-Jhin Cho , Yeon-Jin Gil , Ji-Hoon Jeong , Byung-Kwon Cho , Yong-Sun Ko , Kun-Tack Lee
IPC: H01L21/67 , H01L21/687 , H01L21/02
Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.
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Patent Agency Ranking
公开(公告)号：US10576582B2
公开(公告)日：2020-03-03
申请号：US16029828
申请日：2018-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-Hoo Kim , Il-Sang Lee , Yong-sun Ko , Chang-Gil Ryu , Kun-Tack Lee , Hyo-San Lee
IPC: H01L21/00 , B23K26/146 , B08B7/00 , B08B3/10 , C11D11/00 , H01L21/67 , H01L21/687
Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.
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公开(公告)号：US11227761B2
公开(公告)日：2022-01-18
申请号：US16881113
申请日：2020-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Hoon Jeong , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee
Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.
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公开(公告)号：US10679843B2
公开(公告)日：2020-06-09
申请号：US16133789
申请日：2018-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Hoon Jeong , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee
Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under a supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.
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8.发明授权Cleaning solution composition and method of cleaning semiconductor device using the same 有权清洗液组合物及使用其的半导体装置的清洗方法公开(公告)号：US09394509B2
公开(公告)日：2016-07-19
申请号：US14542973
申请日：2014-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Won Bae , Yong-Sun Ko , Seok-Hoon Kim , In-Gi Kim , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee , Ji-Hoon Jeong , Yong-Jhin Cho
CPC classification number: C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/5022 , H01L21/02063 , H01L21/02068 , H01L21/02071
Abstract: A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF2−), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.
Abstract translation: 清洗液组合物包括金属氟化物不溶解的有机溶剂，至少一种产生氟化氢的氟化物（HF2-）和去离子水，其中可以以1.5重量％以下的浓度包含去离子水 基于清洁溶液组合物的总重量。
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9.发明申请CLEANING SOLUTION COMPOSITION AND METHOD OF CLEANING SEMICONDUCTOR DEVICE USING THE SAME 有权清洁溶液组合物及其清洗使用其的半导体器件的方法公开(公告)号：US20150299629A1
公开(公告)日：2015-10-22
申请号：US14542973
申请日：2014-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Won Bae , Yong-Sun Ko , Seok-Hoon Kim , In-Gi Kim , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee , Ji-Hoon Jeong , Yong-Jhin Cho
CPC classification number: C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/5022 , H01L21/02063 , H01L21/02068 , H01L21/02071
Abstract: A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF2−), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.
Abstract translation: 清洗液组合物包括金属氟化物不溶解的有机溶剂，至少一种产生氟化氢的氟化物（HF2-）和去离子水，其中可以以1.5重量％以下的浓度包含去离子水 基于清洁溶液组合物的总重量。
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