Arrayed Micro-Ring Spectrometer System and Method of Use
    21.
    发明申请
    Arrayed Micro-Ring Spectrometer System and Method of Use 有权
    阵列微环光谱仪系统及其使用方法

    公开(公告)号:US20100039644A1

    公开(公告)日:2010-02-18

    申请号:US12508018

    申请日:2009-07-23

    IPC分类号: G01J3/28

    摘要: A spectrometer system includes an array of micro-zone plates (MZP) each having coaxially-aligned ring gratings, a sample plate for supporting and illuminating a sample, and an array of photon detectors for measuring a spectral characteristic of the predetermined wavelength. The sample plate emits an evanescent wave in response to incident light, which excites molecules of the sample to thereby cause an emission of secondary photons. A method of detecting the intensity of a selected wavelength of incident light includes directing the incident light onto an array of MZP, diffracting a selected wavelength of the incident light onto a target focal point using the array of MZP, and detecting the intensity of the selected portion using an array of photon detectors. An electro-optic layer positioned adjacent to the array of MZP may be excited via an applied voltage to select the wavelength of the incident light.

    摘要翻译: 光谱仪系统包括每个具有同轴对准的环形光栅的微区域阵列(MZP),用于支撑和照射样品的样品板,以及用于测量预定波长的光谱特性的光子检测器阵列。 样品板响应于入射光发射ev逝波,其激发样品的分子,从而引起次级光子的发射。 检测入射光的所选波长的强度的方法包括将入射光引导到MZP阵列上,使用MZP阵列将入射光的选定波长衍射到目标焦点,并检测所选择的 部分使用光子检测器阵列。 可以通过施加的电压激发邻近MZP阵列定位的电光层,以选择入射光的波长。

    Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials
    22.
    发明授权
    Method of generating X-ray diffraction data for integral detection of twin defects in super-hetero-epitaxial materials 有权
    产生X射线衍射数据的方法,用于整体检测超异质外延材料中的双缺陷

    公开(公告)号:US07558371B2

    公开(公告)日:2009-07-07

    申请号:US12254150

    申请日:2008-10-20

    IPC分类号: G01N23/20

    CPC分类号: G01N23/207

    摘要: A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

    摘要翻译: 一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。 该材料安装在X射线衍射(XRD)系统中。 在一个实施例中,XRD系统的测角仪角度Ω被设置为等于(θB-β),其中θB是相对于{111)晶体以非垂直取向设置的合金的指定晶面的布拉格角 平面,β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于(θB+β)。 材料可以围绕与材料对准的轴线旋转方位角旋转角度。 使用检测器,至少以发生双瑕疵的角度记录X射线衍射的强度。

    Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials
    23.
    发明申请
    Method Of Generating X-Ray Diffraction Data For Integral Detection Of Twin Defects In Super-Hetero-Epitaxial Materials 有权
    产生X射线衍射数据的方法,用于在超异质外延材料中双缺陷的积分检测

    公开(公告)号:US20090103680A1

    公开(公告)日:2009-04-23

    申请号:US12254150

    申请日:2008-10-20

    IPC分类号: G01N23/207

    CPC分类号: G01N23/207

    摘要: A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Ω is set equal to (θB−β) where θB is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and β is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (θB+β). The material can be rotated through an angle of azimuthal rotation φ about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

    摘要翻译: 一种方法提供了适用于由具有属于不同空间群的对称性的晶体结构的组分制成的应变或晶格匹配的外延材料中的双缺陷的积分检测的X射线衍射数据。 该材料安装在X射线衍射(XRD)系统中。 在一个实施例中,XRD系统的测角仪角度Ω被设置为等于(θB-β),其中θB是相对于{111)晶体以非垂直取向设置的合金的指定晶面的布拉格角 平面,β是指定的晶面与外延成分之一的{111}晶面之间的角度。 XRD系统的检测器角度设置为等于(θB+β)。 材料可以围绕与材料对准的轴线旋转方位角旋转角度。 使用检测器,至少以发生双瑕疵的角度记录X射线衍射的强度。

    Lock-in imaging system for detecting disturbances in fluid
    24.
    发明授权
    Lock-in imaging system for detecting disturbances in fluid 有权
    锁定成像系统,用于检测流体中的扰动

    公开(公告)号:US08913124B2

    公开(公告)日:2014-12-16

    申请号:US13020194

    申请日:2011-02-03

    摘要: A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

    摘要翻译: 锁定成像系统被配置为检测空气中的干扰。 该系统包括飞机,干涉仪和伸缩成像相机。 飞机包括机身和一对机翼。 飞机配置为在空中飞行。 干涉仪可操作地设置在飞机上并且被配置用于通过沿着两条路径将光束分成两束而产生干涉图案,并且在飞行中在飞机的前飞行路径中的接合点处重新组合两个波束。 伸缩成像照相机被配置为在接合点捕获光束的图像。 所述伸缩成像照相机被配置为基于在所述连接点检测到的所述图像的折射率来检测光路中的空气中的干扰。

    Apparatus and Method for Creating a Photonic Densely-Accumulated Ray-Point
    26.
    发明申请
    Apparatus and Method for Creating a Photonic Densely-Accumulated Ray-Point 有权
    用于创建光子强积累的射线点的装置和方法

    公开(公告)号:US20110024609A1

    公开(公告)日:2011-02-03

    申请号:US12512344

    申请日:2009-07-30

    摘要: An optical apparatus includes an optical diffraction device configured for diffracting a predetermined wavelength of incident light onto adjacent optical focal points, and a photon detector for detecting a spectral characteristic of the predetermined wavelength. One of the optical focal points is a constructive interference point and the other optical focal point is a destructive interference point. The diffraction device, which may be a micro-zone plate (MZP) of micro-ring gratings or an optical lens, generates a constructive ray point using phase-contrasting of the destructive interference point. The ray point is located between adjacent optical focal points. A method of generating a densely-accumulated ray point includes directing incident light onto the optical diffraction device, diffracting the selected wavelength onto the constructive interference focal point and the destructive interference focal point, and generating the densely-accumulated ray point in a narrow region.

    摘要翻译: 光学装置包括被配置为将预定波长的入射光衍射到相邻的光学焦点上的光学衍射装置,以及用于检测预定波长的光谱特性的光子检测器。 其中一个光学焦点是一个建设性的干涉点,另一个光学焦点是一个破坏性的干涉点。 可以是微环形光栅的微区域(MZP)或光学透镜的衍射装置使用相消干涉点的相位对应产生建设性的射线点。 射线点位于相邻的光学焦点之间。 产生密集累积的射线点的方法包括将入射光引导到光学衍射装置上,将所选择的波长衍射到构造干涉焦点和破坏性干涉焦点上,并在狭窄区域中产生密集累积的射线点。

    Devices And Methods For A Micro-Fresnel Zone Plate Optical Device
    27.
    发明申请
    Devices And Methods For A Micro-Fresnel Zone Plate Optical Device 有权
    微型菲涅耳区域平板光学器件的设备和方法

    公开(公告)号:US20100118683A1

    公开(公告)日:2010-05-13

    申请号:US12490747

    申请日:2009-06-24

    IPC分类号: G11B7/00

    摘要: An embodiment generally relates to an optical device suitable for use with an optical medium for the storage and retrieval of data. The optical device includes an illumination means for providing a beam of optical radiation of wavelength λ and an optical path that the beam of optical radiation follows. The optical device also includes a diffractive optical element defined by a plurality of annular sections. The plurality of annular sections having a first material alternately disposed with a plurality of annular sections comprising a second material. The diffractive optical element generates a plurality of focal points and densely accumulated ray points with phase contrast phenomena and the optical medium is positioned at a selected focal point or ray point of the diffractive optical element.

    摘要翻译: 实施例一般涉及适合与光学介质一起使用以用于存储和检索数据的光学装置。 该光学装置包括用于提供波长λ的光束的照射装置和光辐射束跟随的光路。 光学装置还包括由多个环形部分限定的衍射光学元件。 所述多个环形部分具有交替设置有包括第二材料的多个环形部分的第一材料。 衍射光学元件产生具有相位对比现象的多个焦点和密集累积的光点,并且光学介质位于衍射光学元件的选定焦点或射线点处。

    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
    28.
    发明申请
    Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials 有权
    具有单晶性质的三面体立方体半导体材料和基于这种材料的器件

    公开(公告)号:US20090206368A1

    公开(公告)日:2009-08-20

    申请号:US12288379

    申请日:2008-10-20

    CPC分类号: G01N23/207

    摘要: Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

    摘要翻译: 开发基于温度依赖性取向模型的生长条件,以使得能够在三面晶体基底的(0001)面上形成[111]取向的立方体IV族,II-V族和II-VI族晶体, 控制使得与多数单晶相比,原生双晶的体积百分比从约40%降低至约0.3%。 在本实施例和其他实施例中,堆垛层错的控制可以产生基本上没有缺陷的这些材料的单晶半导体,或者具有用于声子散射的具有孪晶晶体的改进的热电材料,同时保持电气完整性。 这些方法可以选择性地产生立方晶三面体外延半导体材料,其中立方体层基本上与下面的三角形材料直接对准或者60度旋转。

    Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof
    30.
    发明授权
    Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof 失效
    具有抑制凹陷/底切的多层间隔物及其制造方法

    公开(公告)号:US07446007B2

    公开(公告)日:2008-11-04

    申请号:US11560893

    申请日:2006-11-17

    IPC分类号: H01L21/336

    摘要: A semiconductor structure includes a multi-layer spacer located adjacent and adjoining a sidewall of a topographic feature within the semiconductor structure. The multi-layer spacer includes a first spacer sub-layer comprising a deposited silicon oxide material laminated to a second spacer sub-layer comprising a material that is other than the deposited silicon oxide material. The first spacer sub-layer is recessed with respect to the second spacer sub-layer by a recess distance of no greater than a thickness of the first spacer sub-layer (and preferably from about 50 to about 150 angstroms). Such a recess distance is realized through use of a chemical oxide removal (COR) etchant that is self limiting for the deposited silicon oxide material with respect to a thermally grown silicon oxide material. Dimensional integrity and delamination avoidance is thus assured for the multi-layer spacer layer.

    摘要翻译: 半导体结构包括位于半导体结构内邻近并毗邻地形特征的侧壁的多层隔离物。 多层间隔物包括第一间隔子层,该第一间隔子层包含层叠到包含不同于沉积氧化硅材料的材料的第二间隔子层的沉积氧化硅材料。 第一间隔子层相对于第二间隔物子层凹陷凹陷距离不大于第一间隔子层的厚度(优选为约50至约150埃)。 通过使用相对于热生长的氧化硅材料对沉积的氧化硅材料来说是自限制的化学氧化物去除(COR)蚀刻剂来实现这种凹陷距离。 因此确保了多层间隔层的尺寸完整性和分层避免。