公开(公告)号：US07483099B2

公开(公告)日：2009-01-27

申请号：US11354194

申请日：2006-02-15

申请人： Kimitaka Kamijo ,  Hideki Kaneko ,  Katsuhiro Imai ,  Tomoyuki Nakano

发明人： Kimitaka Kamijo ,  Hideki Kaneko ,  Katsuhiro Imai ,  Tomoyuki Nakano

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/136227

摘要： A liquid crystal device includes a pair of substrates that face each other, a liquid crystal layer that is interposed between the pair of substrates, electrodes that are formed on opposing surfaces of the pair of substrates so as form a plurality of subpixel regions, in each of which a reflective display region having a light-reflective film reflecting light and a transmissive display region transmitting light are provided, and an insulating layer that is formed between one of the pair of substrates and the liquid crystal layer such that a thickness of the liquid crystal layer in the reflective display region is smaller than a thickness of the liquid crystal layer in the transmissive display region. The insulating layer is formed to have a first film thickness in the reflective display region, and is provided between the transmissive display region of a predetermined subpixel region and the transmissive display region of a subpixel region adjacent to the predetermined subpixel region. A portion of the insulating layer is formed to have a film thickness smaller than the first film thickness between the transmissive display region of the predetermined subpixel region and the transmissive display region of the subpixel region adjacent to the predetermined subpixel region.

摘要翻译： 液晶装置包括一对面对的基板，插入在一对基板之间的液晶层，形成在该一对基板的相对面上的电极，形成多个子像素区域 设置具有反射光反射膜的反射显示区域和透射光透射显示区域的反射显示区域，以及形成在一对基板之一和液晶层之间的绝缘层，使得液体的厚度 反射显示区域中的晶体层比透射显示区域中的液晶层的厚度小。 绝缘层形成为在反射显示区域具有第一膜厚度，并且设置在预定子像素区域的透射显示区域和与预定子像素区域相邻的子像素区域的透射显示区域之间。 绝缘层的一部分形成为具有比预定子像素区域的透射显示区域和与预定子像素区域相邻的子像素区域的透射显示区域之间的第一膜厚度小的膜厚度。

公开(公告)号：US07449064B2

公开(公告)日：2008-11-11

申请号：US11682385

申请日：2007-03-06

申请人： Makoto Iwai ,  Katsuhiro Imai

发明人： Makoto Iwai ,  Katsuhiro Imai

IPC分类号： C30B11/02

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/403

摘要： An AlN single crystal is grown by pressurizing a melt including at least gallium, aluminum and sodium in an atmosphere containing nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature in a range of 850° C. to 1200° C.

摘要翻译： 通过在包含氮气的气氛中对包含至少镓，铝和钠的熔体进行加压来生长AlN单晶。 优选地，AlN单晶在50atms或更低的氮分压下和在850℃至1200℃的温度范围内生长。

公开(公告)号：US20080225194A1

公开(公告)日：2008-09-18

申请号：US11984524

申请日：2007-11-19

申请人： Norihito Harada ,  Katsuhiro Imai

发明人： Norihito Harada ,  Katsuhiro Imai

IPC分类号： G02F1/1368 ,  G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F1/1365 ,  G02F2001/134372 ,  G02F2001/13456

摘要： A liquid crystal device includes a first substrate and a second substrate opposite each other with a liquid crystal layer interposed therebetween, wherein the first substrate includes a signal line, a switching element electrically connected to the signal line, a first electrode electrically connected to the switching element, a wiring line, a dielectric film covering the first electrode, the switching element, and the wiring line, and a second electrode disposed on the dielectric film so as to be opposite the first electrode, and wherein the second electrode is drawn from the dielectric film toward an area where the dielectric film does not exist and is electrically connected to the wiring line through the area where the dielectric film does not exist.

摘要翻译： 液晶装置包括第一基板和彼此相对的液晶层的第二基板，其中第一基板包括信号线，电连接到信号线的开关元件，与开关电连接的第一电极 元件，布线，覆盖第一电极，开关元件和布线的电介质膜，以及设置在电介质膜上以与第一电极相对的第二电极，并且其中第二电极从 电介质膜朝向不存在电介质膜的区域，并且通过不存在电介质膜的区域与布线电连接。

公开(公告)号：US20080223286A1

公开(公告)日：2008-09-18

申请号：US12073178

申请日：2008-02-29

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

公开(公告)号：US06527851B2

公开(公告)日：2003-03-04

申请号：US09798750

申请日：2001-03-02

申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B1508

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。

公开(公告)号：US06204957B1

公开(公告)日：2001-03-20

申请号：US09307525

申请日：1999-05-07

申请人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

发明人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

IPC分类号： G02F137

CPC分类号： G02F1/377 ,  G02F2001/3546 ,  G02F2201/307

摘要： A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).

摘要翻译： 一种用于从基波产生二次谐波的二次谐波发生元件，具有由具有K3Li2-x（Nb1-YTaY）5 + XO15 + Z的基本组成的第一外延材料制成的光波导层，下部部分 由具有K3Li2-X + A（Nb1-Y-BTaY + B）5 + X-AO15 + Z的基本组成的第二外延材料制成，由具有K 3 Li 2 -X + C的基本组成的第三外延材料制成的外包层 （Nb1-Y-DTaY + D）5 + X-CO15 + Z，形成在光波导层上并与光波导层接触，其中X = 0.006〜0.5，Y = 0.00〜0.05，A = 0.006〜0.12，B = 0.005〜0.5 ，C = 0.006〜0.12，D = 0.005〜0.5，XA <= 0，XC> = 0，| AC |≤0.006，| BD |≤0.005）。

公开(公告)号：US08440017B2

公开(公告)日：2013-05-14

申请号：US13208944

申请日：2011-08-12

申请人： Takanao Shimodaira ,  Takayuki Hirao ,  Katsuhiro Imai

发明人： Takanao Shimodaira ,  Takayuki Hirao ,  Katsuhiro Imai

IPC分类号： C30B19/00

CPC分类号： H01L29/2003 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406

摘要： To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

摘要翻译： 为了生长氮化镓晶体，首先将晶种衬底浸入含有镓和钠的熔融混合物中。 然后，在含有氮气且不含氧的加压气氛中加热熔融混合物，在晶种基板上生长氮化镓晶体。 此时，在搅拌熔融混合物的第一搅拌条件下，在籽晶基板上生长氮化镓晶体，将第一搅拌条件设定为提供粗糙的生长表面，然后氮化镓晶体在 晶种基材在搅拌熔融混合物的第二搅拌条件下，将第二搅拌条件设定为提供平滑的生长表面。

公开(公告)号：US08216365B2

公开(公告)日：2012-07-10

申请号：US12073178

申请日：2008-02-29

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B25/18

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

公开(公告)号：US20120012984A1

公开(公告)日：2012-01-19

申请号：US13208944

申请日：2011-08-12

申请人： Takanao SHIMODAIRA ,  Takayuki Hirao ,  Katsuhiro Imai

发明人： Takanao SHIMODAIRA ,  Takayuki Hirao ,  Katsuhiro Imai

IPC分类号： H01L29/20 ,  C30B19/02

CPC分类号： H01L29/2003 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406

摘要： To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

摘要翻译： 为了生长氮化镓晶体，首先将晶种衬底浸入含有镓和钠的熔融混合物中。 然后，在含有氮气且不含氧的加压气氛中加热熔融混合物，在晶种基板上生长氮化镓晶体。 此时，在搅拌熔融混合物的第一搅拌条件下，在籽晶基板上生长氮化镓晶体，将第一搅拌条件设定为提供粗糙的生长表面，然后氮化镓晶体在 晶种基材在搅拌熔融混合物的第二搅拌条件下，将第二搅拌条件设定为提供平滑的生长表面。

公开(公告)号：US08068202B2

公开(公告)日：2011-11-29

申请号：US11984524

申请日：2007-11-19

申请人： Norihito Harada ,  Katsuhiro Imai

发明人： Norihito Harada ,  Katsuhiro Imai

IPC分类号： G02F1/135 ,  G02F1/136 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F1/1365 ,  G02F2001/134372 ,  G02F2001/13456

摘要： A liquid crystal device includes a first substrate and a second substrate opposite each other with a liquid crystal layer interposed therebetween, wherein the first substrate includes a signal line, a switching element electrically connected to the signal line, a first electrode electrically connected to the switching element, a wiring line, a dielectric film covering the first electrode, the switching element, and the wiring line, and a second electrode disposed on the dielectric film so as to be opposite the first electrode, and wherein the second electrode is drawn from the dielectric film toward an area where the dielectric film does not exist and is electrically connected to the wiring line through the area where the dielectric film does not exist.

摘要翻译： 液晶装置包括第一基板和彼此相对的液晶层的第二基板，其中第一基板包括信号线，电连接到信号线的开关元件，与开关电连接的第一电极 元件，布线，覆盖第一电极，开关元件和布线的电介质膜，以及设置在电介质膜上以与第一电极相对的第二电极，并且其中第二电极从 电介质膜朝向不存在电介质膜的区域，并且通过不存在电介质膜的区域与布线电连接。