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公开(公告)号：US09677192B2
公开(公告)日：2017-06-13
申请号：US13135829
申请日：2011-07-15
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406
摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.
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公开(公告)号：US09290861B2
公开(公告)日：2016-03-22
申请号：US13496982
申请日：2010-10-15
CPC分类号： C30B29/406 , C30B33/08 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254
摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.
摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。
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3.发明申请BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTURING THE SAME 有权基底衬底，3B族氮化物晶体及其制造方法公开(公告)号：US20120175740A1
公开(公告)日：2012-07-12
申请号：US13496982
申请日：2010-10-15
IPC分类号： H01L29/20 , H01L21/208
CPC分类号： C30B29/406 , C30B33/08 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254
摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.
摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。
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公开(公告)号：US20110274609A1
公开(公告)日：2011-11-10
申请号：US13135829
申请日：2011-07-15
CPC分类号： C30B9/12 , C30B29/403 , C30B29/406
摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.
摘要翻译： 根据本发明的13族氮化物晶体基板是通过利用通量法在种子晶体基板上生长13族氮化物晶体而制造的，其中在种籽晶的区域内生长的第13族氮化物晶体中的夹杂物的含量， 除了晶种基板的圆周部分以外，晶种基板的面积分数相对于晶种基板的整个面积为70％的区域为10％以下，优选为2％以下。
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5.发明授权公开(公告)号：US08440017B2
公开(公告)日：2013-05-14
申请号：US13208944
申请日：2011-08-12
IPC分类号： C30B19/00
CPC分类号： H01L29/2003 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406
摘要： To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.
摘要翻译： 为了生长氮化镓晶体，首先将晶种衬底浸入含有镓和钠的熔融混合物中。 然后，在含有氮气且不含氧的加压气氛中加热熔融混合物，在晶种基板上生长氮化镓晶体。 此时，在搅拌熔融混合物的第一搅拌条件下，在籽晶基板上生长氮化镓晶体，将第一搅拌条件设定为提供粗糙的生长表面，然后氮化镓晶体在 晶种基材在搅拌熔融混合物的第二搅拌条件下，将第二搅拌条件设定为提供平滑的生长表面。
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6.发明申请公开(公告)号：US20120012984A1
公开(公告)日：2012-01-19
申请号：US13208944
申请日：2011-08-12
CPC分类号： H01L29/2003 , C30B9/10 , C30B19/02 , C30B29/403 , C30B29/406
摘要： To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.
摘要翻译： 为了生长氮化镓晶体，首先将晶种衬底浸入含有镓和钠的熔融混合物中。 然后，在含有氮气且不含氧的加压气氛中加热熔融混合物，在晶种基板上生长氮化镓晶体。 此时，在搅拌熔融混合物的第一搅拌条件下，在籽晶基板上生长氮化镓晶体，将第一搅拌条件设定为提供粗糙的生长表面，然后氮化镓晶体在 晶种基材在搅拌熔融混合物的第二搅拌条件下，将第二搅拌条件设定为提供平滑的生长表面。
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公开(公告)号：US20110287222A1
公开(公告)日：2011-11-24
申请号：US13136056
申请日：2011-07-21
申请人： Takayuki Hirao , Makoto Iwai , Katsuhiro Imai
发明人： Takayuki Hirao , Makoto Iwai , Katsuhiro Imai
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , Y10T428/24355
摘要： A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.
摘要翻译： 制备其上形成有氮化镓薄膜的表面上的蓝宝石衬底作为晶种衬底并置于生长容器中。 称量镓和钠金属以达到25至32:68至75的摩尔比并加入容器中。 将容器放入反应容器中。 入口管连接到反应容器。 从氮气罐通过压力控制器引入氮气以填充反应容器。 当将反应容器的内部压力控制为预定的氮气压力并且设定目标温度使得下部加热器的温度高于上部加热器的温度时，生长氮化镓晶体。 结果，提供了具有大晶粒尺寸和低位错密度的13族氮化物晶体。
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公开(公告)号：US07988784B2
公开(公告)日：2011-08-02
申请号：US12804521
申请日：2010-07-23
申请人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
发明人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
IPC分类号： C30B19/12
CPC分类号： C30B29/403 , C30B19/12
摘要： It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body 1. A single crystal 3 of a nitride of a metal belonging to the group III is grown on the main face 1a of the substrate main body 1 by a liquid phase process. The underlying film 2 has a shape of a convex figure in a plan view. A surface 4 without the underlying film thereon surrounds the entire circumference of the underlying film 2. The single crystal 3 of a nitride of a metal belonging to the group III grown on the underlying film 2 is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.
摘要翻译： 使用基板主体1，该基板主体1具有侧面1b和一对主面1a和属于组III的金属的氮化物的单晶的基底膜，所述III族金属的氮化物形成在基板的至少一个主面上 主体1.通过液相处理，在基板主体1的主面1a上生长属于III族的金属的氮化物的单晶3。 下面的薄膜2在平面图中具有凸形的形状。 没有其下面的膜的表面4围绕下面的膜2的整个圆周。属于在下面的膜2上生长的III族金属的氮化物的单晶3不与单晶 属于第III组的金属的氮化物，形成在另一底层膜上。
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公开(公告)号：US20100307404A1
公开(公告)日：2010-12-09
申请号：US12804521
申请日：2010-07-23
申请人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
发明人： Takayuki Hirao , Katsuhiro Imai , Mikiya Ichimura
IPC分类号： C30B19/12
CPC分类号： C30B29/403 , C30B19/12
摘要： It is used a substrate main body 1 having a side face 1b and a pair of main faces 1a and an underlying film 2 of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body 1. A single crystal 3 of a nitride of a metal belonging to the group III is grown on the main face 1a of the substrate main body 1 by a liquid phase process. The underlying film 2 has a shape of a convex figure in a plan view. A surface 4 without the underlying film thereon surrounds the entire circumference of the underlying film 2 The single crystal 3 of a nitride of a metal belonging to the group III grown on the underlying film 2 is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.
摘要翻译： 使用基板主体1，该基板主体1具有侧面1b和一对主面1a和属于组III的金属的氮化物的单晶的基底膜，所述III族金属的氮化物形成在基板的至少一个主面上 主体1.通过液相处理，在基板主体1的主面1a上生长属于III族的金属的氮化物的单晶3。 下面的薄膜2在平面图中具有凸形的形状。 没有其下面的膜的表面4围绕下面的膜2的整个圆周。属于在下面的膜2上生长的III族金属的氮化物的单晶3不与氮化物的单晶接触 属于第III组的金属，形成于另一底层薄膜上。
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公开(公告)号：US09868877B2
公开(公告)日：2018-01-16
申请号：US13381516
申请日：2010-06-17
申请人： Yasukazu Nakatani , Toshio Miyatani , Hiroshi Torii , Natsumi Okamoto , Takayuki Hirao , Manabu Fujisawa , Shigehito Sagisaka
发明人： Yasukazu Nakatani , Toshio Miyatani , Hiroshi Torii , Natsumi Okamoto , Takayuki Hirao , Manabu Fujisawa , Shigehito Sagisaka
IPC分类号： B32B19/00 , H01B3/30 , C08K5/07 , C09D127/12 , C08K5/00 , C09D127/16 , C09D127/18
CPC分类号： C09D127/12 , C08K5/0091 , C09D127/16 , C09D127/18 , C08L27/12
摘要： The present invention provides a composition including a fluorine-containing polymer, and excellent in heat resistance even if only a small amount of additives is added to the composition. The present invention relates to a composition, comprising: a fluorine-containing polymer (a) and a cobalt compound (b).
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