公开(公告)号：US20080225194A1

公开(公告)日：2008-09-18

申请号：US11984524

申请日：2007-11-19

申请人： Norihito Harada ,  Katsuhiro Imai

发明人： Norihito Harada ,  Katsuhiro Imai

IPC分类号： G02F1/1368 ,  G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F1/1365 ,  G02F2001/134372 ,  G02F2001/13456

摘要： A liquid crystal device includes a first substrate and a second substrate opposite each other with a liquid crystal layer interposed therebetween, wherein the first substrate includes a signal line, a switching element electrically connected to the signal line, a first electrode electrically connected to the switching element, a wiring line, a dielectric film covering the first electrode, the switching element, and the wiring line, and a second electrode disposed on the dielectric film so as to be opposite the first electrode, and wherein the second electrode is drawn from the dielectric film toward an area where the dielectric film does not exist and is electrically connected to the wiring line through the area where the dielectric film does not exist.

摘要翻译： 液晶装置包括第一基板和彼此相对的液晶层的第二基板，其中第一基板包括信号线，电连接到信号线的开关元件，与开关电连接的第一电极 元件，布线，覆盖第一电极，开关元件和布线的电介质膜，以及设置在电介质膜上以与第一电极相对的第二电极，并且其中第二电极从 电介质膜朝向不存在电介质膜的区域，并且通过不存在电介质膜的区域与布线电连接。

公开(公告)号：US20070076146A1

公开(公告)日：2007-04-05

申请号：US11524255

申请日：2006-09-21

申请人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

发明人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133345 ,  G02F1/133555 ,  G02F1/133711

摘要： A liquid crystal device includes a pair of substrates, a liquid crystal layer provided between the substrates, and a plurality of sub-pixels each having a transmissive display region and a reflective display region. One of the substrates includes switching elements corresponding to the sub-pixels, lines connected to the switching elements, and an insulating film provided on the switching elements and the lines. The insulating film includes first recesses provided in the transmissive display regions, and second recesses provided along boundaries between the adjoining sub-pixels. At least a part of the insulating film other than the first and second recesses planarly overlaps with the reflective display regions. The thickness of the liquid crystal layer is smaller in the reflective display regions than in the transmissive display regions having the first recesses. The depth of the second recesses is smaller than the depth of the first recesses.

摘要翻译： 液晶装置包括一对基板，设置在基板之间的液晶层和分别具有透射显示区域和反射显示区域的多个子像素。 其中一个基板包括对应于子像素的开关元件，连接到开关元件的线，以及设置在开关元件和线上的绝缘膜。 绝缘膜包括设置在透射显示区域中的第一凹部和沿着邻接的子像素之间的边界设置的第二凹部。 除了第一和第二凹部以外的绝缘膜的至少一部分与反射显示区域平面地重叠。 反射显示区域中的液晶层的厚度比具有第一凹部的透射显示区域的厚度小。 第二凹部的深度小于第一凹部的深度。

公开(公告)号：US08068202B2

公开(公告)日：2011-11-29

申请号：US11984524

申请日：2007-11-19

申请人： Norihito Harada ,  Katsuhiro Imai

发明人： Norihito Harada ,  Katsuhiro Imai

IPC分类号： G02F1/135 ,  G02F1/136 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F1/1365 ,  G02F2001/134372 ,  G02F2001/13456

摘要： A liquid crystal device includes a first substrate and a second substrate opposite each other with a liquid crystal layer interposed therebetween, wherein the first substrate includes a signal line, a switching element electrically connected to the signal line, a first electrode electrically connected to the switching element, a wiring line, a dielectric film covering the first electrode, the switching element, and the wiring line, and a second electrode disposed on the dielectric film so as to be opposite the first electrode, and wherein the second electrode is drawn from the dielectric film toward an area where the dielectric film does not exist and is electrically connected to the wiring line through the area where the dielectric film does not exist.

摘要翻译： 液晶装置包括第一基板和彼此相对的液晶层的第二基板，其中第一基板包括信号线，电连接到信号线的开关元件，与开关电连接的第一电极 元件，布线，覆盖第一电极，开关元件和布线的电介质膜，以及设置在电介质膜上以与第一电极相对的第二电极，并且其中第二电极从 电介质膜朝向不存在电介质膜的区域，并且通过不存在电介质膜的区域与布线电连接。

公开(公告)号：US07443470B2

公开(公告)日：2008-10-28

申请号：US11524255

申请日：2006-09-21

申请人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

发明人： Norihito Harada ,  Kimitaka Kamijo ,  Katsuhiro Imai ,  Toshihiro Otake

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133345 ,  G02F1/133555 ,  G02F1/133711

摘要： A liquid crystal device includes a pair of substrates, a liquid crystal layer provided between the substrates, and a plurality of sub-pixels each having a transmissive display region and a reflective display region. One of the substrates includes switching elements corresponding to the sub-pixels, lines connected to the switching elements, and an insulating film provided on the switching elements and the lines. The insulating film includes first recesses provided in the transmissive display regions, and second recesses provided along boundaries between the adjoining sub-pixels. At least a part of the insulating film other than the first and second recesses planarly overlaps with the reflective display regions. The thickness of the liquid crystal layer is smaller in the reflective display regions than in the transmissive display regions having the first recesses. The depth of the second recesses is smaller than the depth of the first recesses.

摘要翻译： 液晶装置包括一对基板，设置在基板之间的液晶层和分别具有透射显示区域和反射显示区域的多个子像素。 其中一个基板包括对应于子像素的开关元件，连接到开关元件的线，以及设置在开关元件和线上的绝缘膜。 绝缘膜包括设置在透射显示区域中的第一凹部和沿着邻接的子像素之间的边界设置的第二凹部。 除了第一和第二凹部以外的绝缘膜的至少一部分与反射显示区域平面地重叠。 反射显示区域中的液晶层的厚度比具有第一凹部的透射显示区域的厚度小。 第二凹部的深度小于第一凹部的深度。

公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US20100301358A1

公开(公告)日：2010-12-02

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L29/20 ,  C30B9/12 ,  H01L29/772 ,  H01L33/30 ,  H01L31/0304 ,  H01L21/20

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US20090294909A1

公开(公告)日：2009-12-03

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

摘要翻译： 本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。 本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。 在该方法中，将碳和锗溶解在熔体中，并将​​锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。 熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

公开(公告)号：US07459023B2

公开(公告)日：2008-12-02

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B25/12

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US09677192B2

公开(公告)日：2017-06-13

申请号：US13135829

申请日：2011-07-15

申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406

摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

公开(公告)号：US09290861B2

公开(公告)日：2016-03-22

申请号：US13496982

申请日：2010-10-15

申请人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

发明人： Takayuki Hirao ,  Takanao Shimodaira ,  Katsuhiro Imai

IPC分类号： C30B29/40 ,  C30B33/08 ,  H01L21/02

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254

摘要： Regarding a base substrate, a plurality of steps are formed stepwise on the principal surface (c-face). Each step has a height difference of 10 to 40 μm, and an edge is formed parallel to an a-face of a hexagonal crystal of GaN. Meanwhile, the terrace width of each step is set at a predetermined width. The predetermined width is set in such a way that after a GaN crystal is grown on the principal surface of the base substrate, the principal surface is covered up with grain boundaries when the grown GaN crystal is observed from the surface side. The plurality of steps can be formed through, for example, dry etching, sand blasting, lasing, and dicing.

摘要翻译： 关于基底，在主表面（c面）上逐步形成多个台阶。 每个步骤具有10至40μm的高差，并且与GaN的六方晶的a面平行地形成边缘。 同时，将各台阶的台阶宽度设定为规定的宽度。 预定宽度被设置为在GaN基晶体在基底基板的主表面上生长之后，当从表面侧观察生长的GaN晶体时，主表面被晶界覆盖。 可以通过例如干蚀刻，喷砂，激光和切割来形成多个步骤。