公开(公告)号：US20250160123A1

公开(公告)日：2025-05-15

申请号：US18835069

申请日：2023-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/121 ,  H10K59/12

Abstract: A semiconductor device including a transistor having a minute size is provided. The semiconductor device includes a transistor, a first insulating layer, and a second insulating layer. The transistor includes a first semiconductor layer, a first conductive layer, a second conductive layer including a region overlapping with the first conductive layer with the first insulating layer therebetween, a third conductive layer, and a third insulating layer. The second conductive layer and the first insulating layer have a first opening reaching the first conductive layer. The first semiconductor layer is in contact with a top surface and a side surface of the second conductive layer, a side surface of the first insulating layer, and a top surface of the first conductive layer. The third insulating layer is provided over the first insulating layer, the first semiconductor layer, and the second conductive layer. The third conductive layer is provided over the third insulating layer. The second insulating layer is provided over the third conductive layer and the third insulating layer.

公开(公告)号：US20250113716A1

公开(公告)日：2025-04-03

申请号：US18728173

申请日：2023-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/131 ,  H10K59/12

Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer. The first insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with a top surface of the first conductive layer, a side surface of the first insulating layer, and a top surface and a side surface of the second conductive layer. The second insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the second insulating layer. The first insulating layer has a stacked-layer structure of a third insulating layer and a fourth insulating layer over the third insulating layer. The fourth insulating layer includes a region having a higher film density than the third insulating layer.

公开(公告)号：US20230170444A1

公开(公告)日：2023-06-01

申请号：US18096691

申请日：2023-01-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Shingo EGUCHI ,  Mitsuo MASHIYAMA ,  Masatoshi KATANIWA ,  Hironobu SHOJI ,  Masataka NAKADA ,  Satoshi SEO

IPC: H01L33/44 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00 ,  H10K71/80

CPC classification number: H01L33/44 ,  H10K50/84 ,  H10K50/841 ,  H10K50/844 ,  H10K71/00 ,  H10K71/80 ,  H10K59/1201

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

公开(公告)号：US20220149205A1

公开(公告)日：2022-05-12

申请号：US17585645

申请日：2022-01-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/04

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20220004070A1

公开(公告)日：2022-01-06

申请号：US17291663

申请日：2019-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: G02F1/1362 ,  G02F1/1368

Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.

公开(公告)号：US20210096409A1

公开(公告)日：2021-04-01

申请号：US16956623

申请日：2018-12-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Susumu KAWASHIMA ,  Kei TAKAHASHI ,  Koji KUSUNOKI ,  Masataka NAKADA ,  Ami SATO

IPC: G02F1/1368 ,  G02F1/1362

Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween. The pixel includes a first connection portion where the pixel electrode is electrically connected to the transistor and a second connection portion where the first conductive layer is electrically connected to the common electrode. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.

公开(公告)号：US20190288092A1

公开(公告)日：2019-09-19

申请号：US16344177

申请日：2017-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Masayoshi DOBASHI ,  Masataka NAKADA

IPC: H01L29/66 ,  H01L29/786

Abstract: A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.

公开(公告)号：US20180219102A1

公开(公告)日：2018-08-02

申请号：US15935324

申请日：2018-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

公开(公告)号：US20170271520A1

公开(公告)日：2017-09-21

申请号：US15609405

申请日：2017-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78648

Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

公开(公告)号：US20170102598A1

公开(公告)日：2017-04-13

申请号：US15285096

申请日：2016-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: G02F1/1362 ,  G06F3/01 ,  G02F1/1335 ,  G06F3/041 ,  G02F1/1345 ,  G02F1/1333

CPC classification number: G02F1/136286 ,  G02F1/13338 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.