公开(公告)号：US10192995B2

公开(公告)日：2019-01-29

申请号：US15131298

申请日：2016-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/06 ,  H01L27/108 ,  H01L27/1156 ,  H01L21/8258

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

公开(公告)号：US09842939B2

公开(公告)日：2017-12-12

申请号：US15259294

申请日：2016-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Toshinari Sasaki ,  Kosei Noda ,  Mizuho Sato ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

公开(公告)号：US09761645B2

公开(公告)日：2017-09-12

申请号：US15177470

申请日：2016-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

IPC: H01L27/12 ,  H01L27/32 ,  H01L21/768 ,  H01L33/00 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

公开(公告)号：US09496376B2

公开(公告)日：2016-11-15

申请号：US14854789

申请日：2015-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/16 ,  H01L21/06 ,  H01L29/24 ,  H01L27/115

CPC classification number: H01L29/66969 ,  H01L21/06 ,  H01L21/16 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics. To provide a transistor having a low off-state current. To provide a transistor having a high on-state current. To provide a novel semiconductor device, a novel electronic device, or the like. A method for manufacturing the semiconductor device includes the steps of forming a first semiconductor over a substrate; forming a second semiconductor over and in contact with the first semiconductor; forming a first layer over the second semiconductor; performing oxygen plasma treatment and then removing the first layer to expose at least part of a surface of the second semiconductor; forming a third semiconductor over and in contact with the second semiconductor; forming a first insulator over and in contact with the third semiconductor; and forming a first conductor over the first insulator.

Abstract translation: 提供具有改善的可靠性的半导体器件。 提供具有稳定特性的半导体器件。 提供具有低截止电流的晶体管。 提供具有高导通电流的晶体管。 提供新颖的半导体器件，新颖的电子器件等。 一种制造半导体器件的方法包括以下步骤：在衬底上形成第一半导体; 在第一半导体之上形成第二半导体，并与第一半导体接触; 在所述第二半导体上形成第一层; 执行氧等离子体处理，然后去除第一层以暴露第二半导体的表面的至少一部分; 在所述第二半导体上形成第三半导体并与其接触; 在第三半导体上形成第一绝缘体并与第三半导体接触; 以及在所述第一绝缘体上形成第一导体。

公开(公告)号：US09478664B2

公开(公告)日：2016-10-25

申请号：US14575052

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US09368561B2

公开(公告)日：2016-06-14

申请号：US14454092

申请日：2014-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

IPC: H01L29/04 ,  H01L27/32 ,  H01L27/12 ,  H01L33/00 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

Abstract translation: 在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。 因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属 离子。

公开(公告)号：US10950734B2

公开(公告)日：2021-03-16

申请号：US16248903

申请日：2019-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshiya Endo ,  Mitsuhiro Ichijo

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78 ,  H01L27/06 ,  H01L27/108 ,  H01L27/1156 ,  H01L21/8258

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

公开(公告)号：US10141337B2

公开(公告)日：2018-11-27

申请号：US15723227

申请日：2017-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US10103211B2

公开(公告)日：2018-10-16

申请号：US15669296

申请日：2017-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

IPC: H01L27/12 ,  H01L27/32 ,  H01L21/768 ,  H01L33/00 ,  H01L51/52

Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.

公开(公告)号：US10056497B2

公开(公告)日：2018-08-21

申请号：US15092956

申请日：2016-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.