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    Silicon dot forming method and silicon dot forming apparatus
    21.
    发明授权
    Silicon dot forming method and silicon dot forming apparatus 失效
    硅点形成方法和硅点形成装置

    公开(公告)号：US07988835B2

    公开(公告)日：2011-08-02

    申请号：US11519154

    申请日：2006-09-12

    申请人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

    发明人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  C23C16/50

    CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631

    摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

    摘要翻译： 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr）） （288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD） 在500度的低温下直接在基板（S）上。 在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

    Vacuum arc vapor deposition process and apparatus
    24.
    发明授权
    Vacuum arc vapor deposition process and apparatus 失效

    公开(公告)号：US07033462B2

    公开(公告)日：2006-04-25

    申请号：US10305008

    申请日：2002-11-27

    申请人： Yasuo Murakami ,  Takashi Mikami ,  Kiyoshi Ogata ,  Hiroshi Murakami

    发明人： Yasuo Murakami ,  Takashi Mikami ,  Kiyoshi Ogata ,  Hiroshi Murakami

    IPC分类号： C23C14/34

    CPC分类号： H01J37/32055 ,  C23C14/325 ,  H01J2237/022

    摘要： To prevent the film forming characteristic deterioration by a magnetic field of a magnetic filter to thereby make vacuum arc vapor deposition uniform, in the invention, plurality of magnets includes a terminal magnet closest to a plasma injection hole located at the other end of duct and specified magnets. The terminal magnet located closest to plasma injection hole may be set to incline to a plasma injection plane of the plasma injection hole. Further, at lease one of specified magnets may be inclined to the plasma injection plane. Further more, at least one of magnetic field generating coils may be formed with a plurality of electromagnetic coils, which are inclined at different angles with respect to a cross section of the duct. One of electromagnetic coils may be selectively energized by current on a basis of setting and controlling of deflection magnetic field generated by the magnetic filter.

    Thin film forming apparatus
    26.
    发明授权
    Thin film forming apparatus 失效
    薄膜成型装置

    公开(公告)号：US6051120A

    公开(公告)日：2000-04-18

    申请号：US198584

    申请日：1998-11-24

    申请人： Shigeaki Kishida ,  Takashi Mikami ,  Hiroya Kirimura ,  Kiyoshi Ogata

    发明人： Shigeaki Kishida ,  Takashi Mikami ,  Hiroya Kirimura ,  Kiyoshi Ogata

    IPC分类号： C23C14/32 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  C23C14/46

    CPC分类号： H01J37/3233

    摘要： There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

    摘要翻译： 提供了一种薄膜形成装置，其中高成本的等离子体由成膜室7中的原料气体构成，薄膜通过高等离子体在成膜室7中的基板12的表面上形成 频率，并且同时通过将离子束4照射到基板12的表面上来控制薄膜的特性，其特征在于：基板12由正方形表面或矩形表面的正方形板 ; 并且薄膜形成装置设置有用于在基板12的表面侧上将高频等离子体形成立方体或长方体以覆盖基板12的整个表面的高频电极13。