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    Carbon film-coated article and method of producing the same
    1.
    发明申请
    Carbon film-coated article and method of producing the same 失效
    碳膜涂层制品及其制造方法

    公开(公告)号：US20050186424A1

    公开(公告)日：2005-08-25

    申请号：US10465618

    申请日：2003-06-20

    申请人： Yasuo Murakami ,  Takashi Mikami ,  Hiroshi Murakami

    发明人： Yasuo Murakami ,  Takashi Mikami ,  Hiroshi Murakami

    IPC分类号： C23C14/02 ,  C23C14/06 ,  C23C14/24 ,  C23C28/00 ,  B32B9/00

    CPC分类号： H01J37/32055 ,  C23C14/024 ,  C23C14/0605 ,  C23C28/321 ,  C23C28/322 ,  C23C28/343 ,  C23C28/347 ,  Y10T428/12625 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

    摘要： This invention is directed to a carbon film-coated article comprising a substrate; a mixed layer formed on at least a part of the substrate, and composed of an element(s) constituting the substrate and tungsten; a tungsten film formed on the mixed layer; and a carbon film formed on the tungsten film. The invention provides a method of producing the carbon film-coated article, the method comprising the steps of: forming a mixed layer on at least a part of the substrate, the mixed layer being composed of an element(s) constituting the substrate and tungsten, forming a tungsten film on the mixed layer, and forming a carbon film on the tungsten film, wherein at least one of the mixing layer, the tungsten film and the carbon film is formed using a cathode material evaporated by arc discharge in a vacuum arc deposition apparatus having a vacuum arc evaporation source including the cathode.

    摘要翻译： 本发明涉及一种包含基材的碳膜涂覆制品; 形成在所述基板的至少一部分上并且由构成所述基板的元素和钨构成的混合层; 形成在混合层上的钨膜; 和形成在钨膜上的碳膜。 本发明提供一种制备碳膜涂覆制品的方法，该方法包括以下步骤：在至少部分基材上形成混合层，该混合层由构成基材的元素和钨 在所述混合层上形成钨膜，并在所述钨膜上形成碳膜，其中使用在真空电弧中通过电弧放电蒸发的阴极材料形成所述混合层，所述钨膜和所述碳膜中的至少一个 具有包括阴极的真空电弧蒸发源的沉积设备。

    Vacuum arc vapor deposition process and apparatus
    3.
    发明授权
    Vacuum arc vapor deposition process and apparatus 失效

    公开(公告)号：US07033462B2

    公开(公告)日：2006-04-25

    申请号：US10305008

    申请日：2002-11-27

    申请人： Yasuo Murakami ,  Takashi Mikami ,  Kiyoshi Ogata ,  Hiroshi Murakami

    发明人： Yasuo Murakami ,  Takashi Mikami ,  Kiyoshi Ogata ,  Hiroshi Murakami

    IPC分类号： C23C14/34

    CPC分类号： H01J37/32055 ,  C23C14/325 ,  H01J2237/022

    摘要： To prevent the film forming characteristic deterioration by a magnetic field of a magnetic filter to thereby make vacuum arc vapor deposition uniform, in the invention, plurality of magnets includes a terminal magnet closest to a plasma injection hole located at the other end of duct and specified magnets. The terminal magnet located closest to plasma injection hole may be set to incline to a plasma injection plane of the plasma injection hole. Further, at lease one of specified magnets may be inclined to the plasma injection plane. Further more, at least one of magnetic field generating coils may be formed with a plurality of electromagnetic coils, which are inclined at different angles with respect to a cross section of the duct. One of electromagnetic coils may be selectively energized by current on a basis of setting and controlling of deflection magnetic field generated by the magnetic filter.

    Carbon film-coated article and method of producing the same
    4.
    发明授权
    Carbon film-coated article and method of producing the same 失效
    碳膜涂层制品及其制造方法

    公开(公告)号：US07169473B2

    公开(公告)日：2007-01-30

    申请号：US10465618

    申请日：2003-06-20

    申请人： Yasuo Murakami ,  Takashi Mikami ,  Hiroshi Murakami

    发明人： Yasuo Murakami ,  Takashi Mikami ,  Hiroshi Murakami

    IPC分类号： C23C14/06

    CPC分类号： H01J37/32055 ,  C23C14/024 ,  C23C14/0605 ,  C23C28/321 ,  C23C28/322 ,  C23C28/343 ,  C23C28/347 ,  Y10T428/12625 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

    摘要： This invention is directed to a carbon film-coated article comprising a substrate; a mixed layer formed on at least a part of the substrate, and composed of an element(s) constituting the substrate and tungsten; a tungsten film formed on the mixed layer; and a carbon film formed on the tungsten film. The invention provides a method of producing the carbon film-coated article, the method comprising the steps of: forming a mixed layer on at least a part of the substrate, the mixed layer being composed of an element(s) constituting the substrate and tungsten, forming a tungsten film on the mixed layer, and forming a carbon film on the tungsten film, wherein at least one of the mixing layer, the tungsten film and the carbon film is formed using a cathode material evaporated by arc discharge in a vacuum arc deposition apparatus having a vacuum arc evaporation source including the cathode.

    摘要翻译： 本发明涉及一种包含基材的碳膜涂覆制品; 形成在所述基板的至少一部分上并且由构成所述基板的元素和钨构成的混合层; 形成在混合层上的钨膜; 和形成在钨膜上的碳膜。 本发明提供一种制备碳膜涂覆制品的方法，该方法包括以下步骤：在至少部分基材上形成混合层，该混合层由构成基材的元素和钨 在所述混合层上形成钨膜，并在所述钨膜上形成碳膜，其中使用在真空电弧中通过电弧放电蒸发的阴极材料形成所述混合层，所述钨膜和所述碳膜中的至少一个 具有包括阴极的真空电弧蒸发源的沉积设备。

    Film forming apparatus
    5.
    发明授权
    Film forming apparatus 失效

    公开(公告)号：US06506292B2

    公开(公告)日：2003-01-14

    申请号：US09968016

    申请日：2001-10-02

    申请人： Hiroshi Murakami ,  Takashi Mikami

    发明人： Hiroshi Murakami ,  Takashi Mikami

    IPC分类号： C23C1432

    CPC分类号： H01J37/32055 ,  H01J37/32871 ,  H01J2237/022

    摘要： The vacuum arc evaporation apparatus removes coarse particles from plasma containing cathode materials generated from a cathode 7 provided to a evaporation source 6 by a vacuum arc discharge, and is provided with a porous member 10 on the inside wall of a plasma duct equipped with means for forming deflection magnetic field having a magnetic coil 8 outside thereof so as to guide the plasma in the vicinity of a substrate 11 accommodated in the film forming chamber 1.

    Film depositing method and film depositing apparatus
    6.
    发明授权
    Film depositing method and film depositing apparatus 失效
    薄膜沉积方法和薄膜沉积设备

    公开(公告)号：US6124003A

    公开(公告)日：2000-09-26

    申请号：US283289

    申请日：1999-04-01

    申请人： Takashi Mikami ,  Hiroshi Murakami

    发明人： Takashi Mikami ,  Hiroshi Murakami

    IPC分类号： C23C14/32 ,  C23C16/48 ,  C23C16/50 ,  C23C16/505 ,  C23C16/513 ,  H01J37/317 ,  H01J37/32 ,  H01L21/205 ,  H05H1/46 ,  G21K1/087 ,  H01S27/02

    CPC分类号： H01J37/32082 ,  C23C16/486 ,  C23C16/505 ,  H01J37/3178 ,  H01J2237/08

    摘要： A film is deposited on a target object by exposing the target object to film deposition plasma of a film deposition material gas while irradiating the target object with ion beams. An ion source is used for the irradiation with the ion beams. The ion source has a plasma container and an ion beam producing electrode system formed of four electrodes. The plasma container and the first electrode located in an inner position nearest to the plasma container carry a positive potential. The second electrode carries a negative potential or a lower potential than the film deposition plasma. The third electrode carries a positive potential or a higher potential than the film deposition plasma. The fourth electrode in the outer position remotest from the plasma container carries a ground potential.

    摘要翻译： 通过将目标物体暴露于成膜材料气体的成膜等离子体，同时用离子束照射目标物体，将膜沉积在目标物体上。 离子源用于照射离子束。 离子源具有等离子体容器和由四个电极形成的离子束产生电极系统。 位于最靠近等离子体容器的内部位置的等离子体容器和第一电极携带正电位。 第二电极具有比电沉积等离子体更低的负电位或更低的电位。 第三电极具有比成膜等离子体的正电位或更高的电位。 距等离子体容器最远的外部位置的第四电极具有接地电位。

    Thin film forming apparatus
    7.
    发明授权
    Thin film forming apparatus 失效
    薄膜成型装置

    公开(公告)号：US06116187A

    公开(公告)日：2000-09-12

    申请号：US315145

    申请日：1999-05-20

    申请人： Hiroshi Murakami ,  Takashi Mikami ,  Kiyoshi Ogata

    发明人： Hiroshi Murakami ,  Takashi Mikami ,  Kiyoshi Ogata

    IPC分类号： C30B25/02 ,  C23C16/50 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  C23C16/00

    CPC分类号： H01J37/3233 ,  C23C16/517

    摘要： A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

    摘要翻译： 薄膜形成装置具有作为成膜室的真空室，等离子体产生单元和离子源。 在真空室中，放置基板，在基板上形成薄膜。 等离子体产生单元分解引入真空室的源气体，以在真空室内的基板的成膜表面附近产生源气体的等离子体。 离子源设置在真空室周围。 离子源产生离子束，其被引出以基本上平行于衬底的成膜表面引导以照射等离子体。

    Silicon object forming method and apparatus
    8.
    发明申请
    Silicon object forming method and apparatus 失效
    硅体形成方法和装置

    公开(公告)号：US20080035471A1

    公开(公告)日：2008-02-14

    申请号：US11524207

    申请日：2006-09-21

    申请人： Takashi Mikami ,  Atsushi Tomyo ,  Kenji Kato ,  Eiji Takahashi ,  Tsukasa Hayashi

    发明人： Takashi Mikami ,  Atsushi Tomyo ,  Kenji Kato ,  Eiji Takahashi ,  Tsukasa Hayashi

    IPC分类号： C23C14/00

    CPC分类号： C23C14/3457 ,  C23C14/228 ,  C23C14/3464 ,  H01J37/32357 ,  H01J37/32972 ,  H01J37/34

    摘要： A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

    摘要翻译： 硅物体形成目标衬底被布置在第一腔室中，硅溅射靶设置在与第一腔室连通的第二室中，用于化学溅射的等离子体由第二腔室中的氢气形成，化学溅射 由此形成等离子体的硅溅射靶，产生有助于硅物体形成的颗粒，由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

    Motor mounting structure
    9.
    发明授权
    Motor mounting structure 失效
    电机安装结构

    公开(公告)号：US06802699B2

    公开(公告)日：2004-10-12

    申请号：US10455330

    申请日：2003-06-06

    申请人： Takashi Mikami ,  Hiroyuki Kawada

    发明人： Takashi Mikami ,  Hiroyuki Kawada

    IPC分类号： F04B1700

    CPC分类号： F04D25/082 ,  F04D29/4226

    摘要： A ring-like rib 19 is erected on an inner circumferential edge of an insertion hole 11, which is opened in the scroll casing 1 so that the fan f is inserted therethrough, while a side wall 18 facing the ring-like rib 19 is provided in the bracket 15 blocking the insertion hole 11. A helical groove portion 20 and a protruding portion 21 are formed in one of an outer surface of the side wall 18 and an inner surface of the ring-like rib 19 and in the other thereof, respectively. The bracket 15 is caught in the scroll casing 1 by turning the bracket 15 in a direction opposite to a direction of rotation of said fan f. Further, during the engagement therebetween, a cooling duct 4 is formed.

    摘要翻译： 环形肋19竖立在插入孔11的内周缘上，该插入孔11在涡旋壳体1中打开，从而风扇f插入其中，而面向环状肋19的侧壁18 在支架15中，阻挡插入孔11.在侧壁18的外表面和环状肋19的内表面之一中形成螺旋槽部20和突出部21， 分别。 托架15通过沿与所述风扇f的旋转方向相反的方向转动支架15而卡在涡旋壳体1中。 此外，在其间的接合期间，形成冷却管道4。