MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION
    21.
    发明申请
    MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION 审中-公开
    使用等离子体植入的磁畴图案

    公开(公告)号:US20090199768A1

    公开(公告)日:2009-08-13

    申请号:US12029601

    申请日:2008-02-12

    IPC分类号: B44C1/22 C23C16/00

    CPC分类号: G11B5/855 H01F41/34

    摘要: A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.

    摘要翻译: 一种用于在基板上的磁性薄膜中定义磁畴的方法,包括:用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂,其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体,其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域,使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括:保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置,其被配置为(1)装配在所述室内,(2)保持多个盘,将多个盘间隔开,其中,多个盘中的每一个的两侧暴露,以及(3) 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器,由此等离子体可以在腔室中点燃,并且盘在两侧均匀地暴露于等离子体离子。

    SULFURIZATION OR SELENIZATION IN MOLTEN (LIQUID) STATE FOR THE PHOTOVOLTAIC APPLICATIONS
    23.
    发明申请
    SULFURIZATION OR SELENIZATION IN MOLTEN (LIQUID) STATE FOR THE PHOTOVOLTAIC APPLICATIONS 审中-公开
    用于光伏应用的液体(液体)状态的硫化或放电

    公开(公告)号:US20100255660A1

    公开(公告)日:2010-10-07

    申请号:US12755203

    申请日:2010-04-06

    IPC分类号: H01L21/363

    摘要: A method of forming a solar cell incorporating a compound semiconductor is provided. The compound semiconductor is generally of the “II/VI” variety, and is formed by depositing one or more group II elements in a vapor deposition process, and then contacting the deposited layer with a liquid bath of the group VI elements. The liquid bath may comprise a pure element or a mixture of elements. The contacting is performed under a non-reactive atmosphere, or vacuum, and any fugitive vapors may be captured by a cold trap and recycled. The substrate may be subsequently annealed to remove any excess of the group VI elements, which may be similarly recycled.

    摘要翻译: 提供一种形成包含化合物半导体的太阳能电池的方法。 化合物半导体通常为“II / VI”,并且通过在气相沉积工艺中沉积一个或多个II族元素,然后使沉积层与VI族元素的液槽接触而形成。 液体浴可以包含纯元素或元素的混合物。 接触在非反应性气氛或真空下进行,并且任何逸出的蒸气可能被冷阱捕获并再循环。 可以随后将基材退火以除去任何过量的可以类似地再循环的VI族元素。

    MAGNETIC NANOWIRES FOR TCO REPLACEMENT
    24.
    发明申请
    MAGNETIC NANOWIRES FOR TCO REPLACEMENT 审中-公开
    用于替代TCO的磁性纳米颗粒

    公开(公告)号:US20100101829A1

    公开(公告)日:2010-04-29

    申请号:US12258263

    申请日:2008-10-24

    IPC分类号: H01B5/00 H05K3/10

    摘要: This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanowires in a plane, the nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the nanowires in the plane of the layer, the nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanowires allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanowires are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanowires on the substrate and applying a magnetic field to form the nanowires into a plurality of conductive pathways parallel to the surface of the substrate.

    摘要翻译: 本发明提供了具有低电薄片电阻和良好的光学透明度的期望组合的光学透明导电层。 导电层在平面中包括多个磁性纳米线,纳米线大致(1)彼此平行对准,(2)与该层的平面中的纳米线的长轴对准,纳米线还被配置成提供 多个连续导电路径,并且其中多个磁性纳米线的密度允许导电层的实质的光学透明度。 此外,导电层可以包括光学透明的连续导电膜,其中多个磁性纳米线电连接到连续导电膜。 在衬底上形成导电层的方法包括:在衬底上沉积多个导电纳米线并施加磁场以形成平行于衬底表面的多个导电通路中的纳米线。

    METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES
    25.
    发明申请
    METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES 有权
    薄膜电池高容量制造方法

    公开(公告)号:US20090148764A1

    公开(公告)日:2009-06-11

    申请号:US12257049

    申请日:2008-10-23

    IPC分类号: H01M6/18 B05D5/12

    摘要: Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.

    摘要翻译: 提供了概念和方法,以通过消除和/或最小化常规物理(阴影)掩模的使用来降低薄膜电池(TFB)大批量制造的成本和复杂性。 激光划线和其他可选的物理无掩模图案化技术满足某些或所有图案化要求。 在一个实施例中,制造薄膜电池的方法包括提供衬底,在衬底上沉积与薄膜电池结构相对应的层,所述层按沉积顺序包括阴极,电解质和阳极,其中至少 沉积层中的一个在沉积期间由物理掩模未图案化,沉积保护涂层,以及划刻层和保护涂层。 此外,层的边缘可以被封装层覆盖。 此外,可以将这些层沉积在两个基板上,然后层压以形成薄膜电池。

    NANOCRYSTAL FORMATION
    26.
    发明申请
    NANOCRYSTAL FORMATION 审中-公开
    纳米结构

    公开(公告)号:US20080135914A1

    公开(公告)日:2008-06-12

    申请号:US11771778

    申请日:2007-06-29

    IPC分类号: H01L21/28 H01L29/788

    摘要: In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5×1012 cm−2, preferably, at least about 8×1012 cm−2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.

    摘要翻译: 在一个实施例中,提供了一种在衬底上形成金属纳米晶体材料的方法,其包括将衬底暴露于预处理工艺,在衬底上形成隧道电介质层,将衬底暴露于后处理工艺,形成金属纳米晶体 并在所述金属纳米晶层上形成介电覆盖层。 该方法进一步提供形成金属纳米晶层,其纳米晶密度为至少约5×10 12 cm -2,优选至少约8×10 12 / > cm -2。 在一个实例中,金属纳米晶层包含铂,钌或镍。 在另一个实施例中,提供了一种在衬底上形成多层金属纳米晶体材料的方法,其包括形成多个双层,其中每个双层包含沉积在金属纳米晶层上的中间介电层。 一些示例包括10,50,100,200或更多的双层。