公开(公告)号：USRE40008E1

公开(公告)日：2008-01-22

申请号：US10602795

申请日：2003-06-24

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: G21G5/10

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer. Scaling of the difference can therefore be used to adjust a wafer scan rate that accounts for non-line of sight collisions.

Abstract translation: 一种用于在沿着光束线的真空波动期间控制植入的方法和装置。 可以基于检测到的束电流来检测真空波动和/或可以在不测量注入室中的压力的​​情况下补偿真空波动。 可以确定离子束电流的参考水平，并且可以使用参考值和测量离子束电流之间的差来控制离子注入过程的参数，例如晶片扫描速率。 差值也可以被缩放以考虑导致检测到的束电流减小的两种类型的电荷交换冲突。 第一类型的碰撞，非视线碰撞导致检测到的束电流降低，并且还导致递送到半导体晶片的总剂量的减小。 第二种类型的碰撞，视线碰撞导致检测到的束电流降低，但不影响传送给晶片的总剂量。 因此，差异的缩放可用于调整考虑非视线碰撞的晶片扫描速率。

公开(公告)号：US06521895B1

公开(公告)日：2003-02-18

申请号：US09425123

申请日：1999-10-22

Applicant: Steven R. Walther ,  Nicholas R. White

Inventor： Steven R. Walther ,  Nicholas R. White

IPC: G21K108

CPC classification number: H01J37/1474 ,  G21K1/087 ,  H01J37/15 ,  H01J37/3171 ,  H01J2237/30483

Abstract: Methods and apparatus are provided for scanning a charged particle beam. The apparatus includes scan elements and a scan signal generator for generating scan signals for scanning the charged particle beam in a scan pattern having a scan origin. In one embodiment, the apparatus includes a position controller for positioning the scan elements based on a parameter of the charged particle beam, such as energy. The scan elements may be positioned to achieve a fixed position of the scan origin for different beam energies. In another embodiment, the apparatus includes first and second sets of scan elements and a scan signal controller for controlling the scan signals supplied to the sets of scan elements based on a parameter of the charged particle beam, such as energy. The scan signal controller may control the ratio of the scan signals applied to the sets of scan elements, or may deenergize a set of scan elements, to minimize space charge forces on the charged particle beam that may reduce beam transmission through the apparatus.

Abstract translation: 提供了用于扫描带电粒子束的方法和装置。 该装置包括扫描元件和扫描信号发生器，用于产生用于以具有扫描原点的扫描图案扫描带电粒子束的扫描信号。 在一个实施例中，该装置包括位置控制器，用于基于带电粒子束（例如能量）的参数定位扫描元件。 扫描元件可以被定位成实现用于不同光束能量的扫描原点的固定位置。 在另一个实施例中，该装置包括第一组扫描元件和第二组扫描元件以及扫描信号控制器，用于基于诸如能量的带电粒子束的参数来控制提供给扫描元件组的扫描信号。 扫描信号控制器可以控制施加到该组扫描元件的扫描信号的比率，或者可以去除一组扫描元件，以最小化带电粒子束上的空间电荷力，以减少通过该装置的波束传输。

公开(公告)号：US06323497B1

公开(公告)日：2001-11-27

申请号：US09586492

申请日：2000-06-02

Applicant: Steven R. Walther

Inventor： Steven R. Walther

IPC: G21G510

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/31703

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer. Scaling of the difference can therefore be used to adjust a wafer scan rate that accounts for non-line of sight collisions.

Abstract translation: 一种用于在沿着光束线的真空波动期间控制植入的方法和装置。 可以基于检测到的束电流来检测真空波动和/或可以在不测量注入室中的压力的​​情况下补偿真空波动。 可以确定离子束电流的参考水平，并且可以使用参考值和测量的离子束电流之间的差来控制离子注入过程的参数，例如晶片扫描速率。 差值也可以被缩放以考虑导致检测到的束电流减小的两种类型的电荷交换冲突。 第一类型的碰撞，非视线碰撞导致检测到的束电流降低，并且还导致递送到半导体晶片的总剂量的减小。 第二种类型的碰撞，视线碰撞导致检测到的束电流降低，但不影响传送给晶片的总剂量。 因此，差异的缩放可用于调整考虑非视线碰撞的晶片扫描速率。

公开(公告)号：US08766523B2

公开(公告)日：2014-07-01

申请号：US13618682

申请日：2012-09-14

Applicant: Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

Inventor： Steven R. Walther ,  Gerald M. Friedman ,  Michael L. Bufano

IPC: H01J33/04

CPC classification number: G21K5/00 ,  H01J5/18 ,  H01J33/04 ,  H01J2237/164 ,  Y10T156/10

Abstract: An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.

Abstract translation: 出口窗口可以包括出口窗口箔片和支撑出口窗口箔片的支撑格栅。 支撑格栅可以具有第一和第二格栅，每个栅格具有相互对准的第一和第二格栅部分，并且彼此热隔离。 第一和第二格栅部分可以各自具有一系列孔，其被对准以允许梁通过其到达并通过出射窗箔。 第二格栅部分可以接触出口窗箔。 第一格栅部分可以掩蔽第二格栅部分和出射窗箔，以防止由射束撞击第一格栅部分引起的热量。

公开(公告)号：US08222053B2

公开(公告)日：2012-07-17

申请号：US12603707

申请日：2009-10-22

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L21/00 ,  H01L31/00

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US20110207308A1

公开(公告)日：2011-08-25

申请号：US13099203

申请日：2011-05-02

Applicant: Jonathan G. ENGLAND ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

Inventor： Jonathan G. ENGLAND ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

IPC: H01L21/265 ,  H01L21/683

CPC classification number: H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract translation: 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部 冷却晶片经历离子注入工艺的工位。

公开(公告)号：US07935942B2

公开(公告)日：2011-05-03

申请号：US11504367

申请日：2006-08-15

Applicant: Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

Inventor： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

IPC: H01J37/00

CPC classification number: H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract translation: 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中 冷却晶片进行离子注入工艺。

公开(公告)号：US07820527B2

公开(公告)日：2010-10-26

申请号：US12119170

申请日：2008-05-12

Applicant: Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

Inventor： Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material.

Abstract translation: 描述了使用变化的离子注入剂量提供切割引发的方法。 在一个实施例中，存在形成衬底的方法。 在该实施例中，提供半导体材料并且注入空间变化的一种或多种离子种类的剂量。 处理衬底附着到植入的半导体材料上。 植入的半导体材料的切割在优先位置从处理器基底开始，该优先位置是从植入半导体材料的一种或多种离子物质的空间变化剂量产生的剂量梯度的函数。

公开(公告)号：US20090162953A1

公开(公告)日：2009-06-25

申请号：US11961157

申请日：2007-12-20

Applicant: Morgan Evans ,  Norman E. Hussey ,  Steven R. Walther ,  Rekha Padmanabhan

Inventor： Morgan Evans ,  Norman E. Hussey ,  Steven R. Walther ,  Rekha Padmanabhan

IPC: H01L21/66 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/30472

Abstract: An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.

Abstract translation: 描述了用于预测离子注入中的剂量重复性的方法。 在一个实施例中，调节离子源以产生具有期望的束电流的离子束。 光束电流测量从调谐离子束获得。 作为束电流测量的函数，预测离子注入的剂量重复性。

公开(公告)号：US07544959B2

公开(公告)日：2009-06-09

申请号：US12099420

申请日：2008-04-08

Applicant: Steven R. Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

Inventor： Steven R. Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

IPC: H01J37/317 ,  H01J37/36 ,  H01L21/302

CPC classification number: C03C23/0055 ,  B08B7/0057 ,  B08B7/0071 ,  C03C15/00 ,  C03C23/002 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/26513

Abstract: Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.

Abstract translation: 公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。 去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。 结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。 该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。