公开(公告)号：US07820460B2

公开(公告)日：2010-10-26

申请号：US12205514

申请日：2008-09-05

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L21/00 ,  H01L31/00 ,  C23C16/00

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US07675730B2

公开(公告)日：2010-03-09

申请号：US11767730

申请日：2007-06-25

Applicant: Steven R. Walther ,  Bon-Woong Koo ,  Bernard Gregory Lindsay

Inventor： Steven R. Walther ,  Bon-Woong Koo ,  Bernard Gregory Lindsay

IPC: H01L23/00

CPC classification number: H01J37/3299 ,  H01J37/32935

Abstract: Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.

Abstract translation: 公开了一种在等离子体处理系统中检测晶片充电的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。 该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。 该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。 该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

公开(公告)号：US20100041176A1

公开(公告)日：2010-02-18

申请号：US12603707

申请日：2009-10-22

Applicant: Paul SULLIVAN ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul SULLIVAN ,  Peter Nunan ,  Steven R. Walther

IPC: H01L31/0232 ,  H01L31/02

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US07638781B2

公开(公告)日：2009-12-29

申请号：US11860333

申请日：2007-10-22

Applicant: Steven R. Walther ,  Harold M. Persing

Inventor： Steven R. Walther ,  Harold M. Persing

IPC: A61N5/00

CPC classification number: H01J37/3299 ,  H01J37/32449 ,  H01J37/32935

Abstract: A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.

Abstract translation: 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。

公开(公告)号：US20090101848A1

公开(公告)日：2009-04-23

申请号：US11860333

申请日：2007-10-22

Applicant: Steven R. Walther ,  Harold M. Persing

Inventor： Steven R. Walther ,  Harold M. Persing

IPC: G21K5/00

CPC classification number: H01J37/3299 ,  H01J37/32449 ,  H01J37/32935

Abstract: A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.

Abstract translation: 等离子体处理系统包括处理室，被配置为在处理室中产生等离子体的源，被配置为支撑处理室中的工件的压板和邻近工件定位的压力传感器。 压力传感器被配置为监测邻近工件的局部压力。 一种方法包括在处理室中产生等离子体，在处理室中支撑工件，并用邻近工件定位的压力传感器监测与工件相邻的局部压力。

公开(公告)号：US07326937B2

公开(公告)日：2008-02-05

申请号：US11076696

申请日：2005-03-09

Applicant: Sandeep Mehta ,  Steven R. Walther ,  Naushad K. Variam

Inventor： Sandeep Mehta ,  Steven R. Walther ,  Naushad K. Variam

IPC: H01J27/00

CPC classification number: H01J37/32412

Abstract: Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.

Abstract translation: 等离子体离子注入装置包括处理室，位于用于支撑衬底的处理室中的压板，包括固体掺杂剂元素的掺杂剂源和用于从固体掺杂剂元素蒸发掺杂剂材料的蒸发器，等离子体源，以产生含有 掺杂剂材料的离子和注入脉冲源，以将注入脉冲施加到压板上，以将掺杂剂材料的离子从等离子体加速到衬底中。

公开(公告)号：US08470616B2

公开(公告)日：2013-06-25

申请号：US13529702

申请日：2012-06-21

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L21/00 ,  G01T1/36

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US07939424B2

公开(公告)日：2011-05-10

申请号：US12212386

申请日：2008-09-17

Applicant: Yuri Erokhin ,  Paul Sullivan ,  Steven R. Walther ,  Peter Nunan

Inventor： Yuri Erokhin ,  Paul Sullivan ,  Steven R. Walther ,  Peter Nunan

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/76251 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/201 ,  H01J2237/202 ,  H01L21/26506 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2924/30105

Abstract: A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.

Abstract translation: 公开了一种通过离子注入激活的晶片接合两个基板的方法。 原位离子键合室允许离子激活和结合发生在制造工艺线中使用的现有工艺工具中。 在低注入能量下进行至少一个衬底的离子激活，以确保薄表面层下面的晶片材料不受离子激活的影响。

公开(公告)号：US20090209084A1

公开(公告)日：2009-08-20

申请号：US12119170

申请日：2008-05-12

Applicant: Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

Inventor： Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin ,  Paul J. Sullivan

IPC: H01L21/30

CPC classification number: H01L21/76254

Abstract: An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material

Abstract translation: 描述了使用变化的离子注入剂量提供切割引发的方法。 在一个实施例中，存在形成衬底的方法。 在该实施例中，提供半导体材料并且注入空间变化的一种或多种离子种类的剂量。 处理衬底附着到植入的半导体材料上。 植入的半导体材料的切割在优先位置从处理器基底开始，该优先位置是从注入到半导体材料中的一种或多种离子种类的空间变化剂量形成的剂量梯度的函数

公开(公告)号：US20090181492A1

公开(公告)日：2009-07-16

申请号：US12013064

申请日：2008-01-11

Applicant: Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin

Inventor： Peter Nunan ,  Steven R. Walther ,  Yuri Erokhin

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/76254 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: An approach for nano-cleaving a thin-film of silicon for solar cell fabrication is described. In one embodiment, there is a method of forming a substrate for use as a solar cell substrate. In this embodiment, a substrate of silicon is provided and implanted with an ion flux. A non-silicon substrate is attached to the thin-film of silicon to form a solar cell substrate.

Abstract translation: 描述了用于太阳能电池制造的用于纳米切割硅薄膜的方法。 在一个实施例中，存在形成用作太阳能电池基板的基板的方法。 在本实施例中，提供硅衬底并注入离子通量。 将非硅衬底附着到硅的薄膜上以形成太阳能电池衬底。