利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.04 秒)

    Field emission display with diode-type field emitters
    21.
    发明授权
    Field emission display with diode-type field emitters 有权
    具有二极管型场发射器的场发射显示

    公开(公告)号：US06307323B1

    公开(公告)日：2001-10-23

    申请号：US09474528

    申请日：1999-12-29

    申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

    发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

    IPC分类号： G05G310

    CPC分类号： B82Y10/00 ,  G09G3/22 ,  H01J31/126 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

    摘要： A field emission display in which field emission devices are applied to a flat panel display. A field emission display with diode-type field emitters includes an upper plate and a lower plate, the upper plate and the lower plate are vacuum-packaged in parallel. The lower plate includes a plurality of column signal buses and a plurality of row signal buses, film type field emitters, and switching devices. The column signal buses and the row signal buses are made of metallic material. Pixels are defined by the column signal buses and the row signal buses. A film type field emitter and a switching device are formed inside each pixel. The switching device controls the field emitter on the basis of scan signals and data signals. The scan signals and data signals are loaded to the switching devices through the column signal buses and the row signal buses. The switching device includes at least three electrodes for connection with the column signal bus, the row signal bus, and the field emitter.

    摘要翻译： 场发射装置用于平板显示器的场致发射显示器。 具有二极管型场致发射体的场发射显示器包括上板和下板，上板和下板被并联真空包装。 下板包括多个列信号总线和多个行信号总线，薄膜型场发射器和开关装置。 列信号总线和行信号总线由金属材料制成。 像素由列信号总线和行信号总线定义。 在每个像素内部形成有膜型场发射器和开关器件。 开关装置根据扫描信号和数据信号控制场发射器。 扫描信号和数据信号通过列信号总线和行信号总线加载到开关装置。 开关装置包括用于与列信号总线，行信号总线和场发射器连接的至少三个电极。

    Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines
    22.
    发明授权
    Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines 有权
    具有连接到分离的井管线的铁电存储晶体管的铁电存储器件

    公开(公告)号：US06411542B1

    公开(公告)日：2002-06-25

    申请号：US09966112

    申请日：2001-10-01

    申请人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

    发明人： Yil Suk Yang ,  Byoung Gon Yu ,  In Kyu You ,  Won Jae Lee ,  Kyoung Ik Cho

    IPC分类号： G11C1122

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory device including a single ferroelectric transistor that one unit memory cell is independently selected and programmed, when the unit memory cell is programmed for “the first state” or “the second state” by applying a DC bias voltage to the single ferroelectric transistor's gate and well. In addition, the ferroelectric memory device can be applied with normal power level Vdd and GND. The ferroelectric memory device includes a plurality of unit memory cells which are arranged in a matrix, by crossing at least one word line in a column direction with a plurality of bit lines and source lines in a row direction and is connected between the source line and the bit line.

    摘要翻译： 当单位存储单元被编程为“第一状态”或“第二状态”时，包括单个存储单元被独立地选择和编程的单个铁电晶体管的铁电存储器件通过将DC偏置电压施加到单个铁电晶体管 门和井。 此外，铁电存储器件可以应用正常的功率电平Vdd和GND。 铁电存储器件包括多个单元存储单元，它们以矩阵形式布置，使列方向上的至少一个字线与行方向上的多个位线和源极线相交，并连接在源极线和 位线。

    Field emission display
    23.
    发明授权
    Field emission display 失效
    场发射显示

    公开(公告)号：US6137219A

    公开(公告)日：2000-10-24

    申请号：US122823

    申请日：1998-07-27

    申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

    发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

    IPC分类号： H01J1/30 ,  G09G3/22 ,  H01J31/12

    CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

    摘要： A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

    摘要翻译： 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    24.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20110266542A1

    公开(公告)日：2011-11-03

    申请号：US13094933

    申请日：2011-04-27

    申请人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

    发明人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

    IPC分类号： H01L29/04 ,  H01L21/336

    CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/78648

    摘要： Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

    摘要翻译： 提供一种包括双栅晶体管的半导体器件及其制造方法。 半导体器件包括下栅极电极，下栅电极上的上栅电极，插入在下栅电极和上栅电极之间的接触插塞，并将下栅电极连接到上栅电极，功能电极 与上栅电极间隔开并形成与上栅电极相同的高度。 表现出高场效应迁移率的双栅极晶体管被施加到半导体器件，从而可以提高半导体器件的特性。 特别是，由于不需要附加的掩模或沉积工艺，所以大面积的高分辨率半导体器件既可以增加工艺成本也不会降低产量。

    Field emission device
    25.
    发明授权
    Field emission device 失效
    场发射装置

    公开(公告)号：US06583477B1

    公开(公告)日：2003-06-24

    申请号：US10121981

    申请日：2002-04-12

    申请人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    发明人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    IPC分类号： H01L2906

    CPC分类号： H01J29/96 ,  H01J1/46 ,  H01J3/021 ,  H01J29/02 ,  H01J29/467 ,  H01J31/127 ,  H01J2329/92 ,  H01L27/12 ,  H01L29/78669

    摘要： The present invention provides a field emission device driven with a high voltage. The field emission device of the present invention includes a resistor connected between a gate electrode and an external terminal to prevent a leakage current by an electrical connection between the gate electrode and the emitter. Therefore, the power consumption of the device is decreased and the operating characteristic of the device is improved.

    摘要翻译： 本发明提供一种利用高电压驱动的场致发射器件。 本发明的场致发射器件包括连接在栅电极和外部端子之间的电阻器，以通过栅电极和发射极之间的电连接来防止漏电流。 因此，降低了设备的功耗，提高了设备​​的工作特性。

    NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same
    27.
    发明授权
    NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same 有权
    NMOS器件，PMOS器件和SOI衬底上形成的SiGe HBT器件及其制造方法

    公开(公告)号：US07943995B2

    公开(公告)日：2011-05-17

    申请号：US12068161

    申请日：2008-02-04

    申请人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

    发明人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L29/66242 ,  H01L21/84 ,  H01L27/1203

    摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

    摘要翻译： 提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。 在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。 特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。 此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

    Modulation frequency tunable optical oscillator
    28.
    发明授权
    Modulation frequency tunable optical oscillator 有权
    调制频率可调光学振荡器

    公开(公告)号：US06975796B2

    公开(公告)日：2005-12-13

    申请号：US10749145

    申请日：2003-12-31

    申请人： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

    发明人： Ho Young Kim ,  Eun Soo Nam ,  Kyoung Ik Cho

    IPC分类号： G02B26/00 ,  G02B6/34 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/16 ,  G02B6/26 ,  H01S3/082 ,  H01S3/30

    CPC分类号： G02B6/29319 ,  G02B6/02076 ,  G02B6/278 ,  G02B6/29322 ,  H01S3/0675 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1608

    摘要： The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

    摘要翻译： 本发明涉及一种毫米波频带光学振荡器，用于在下一代的毫米波无线用户通信系统（即，第5代或更少）中从中继器向无线用户发射的毫米波的振荡频率信号源 ）非常高速的无线互联网服务，其中使用环形镜和一对光纤光栅镜。 波长固定型和波长可调型光纤光栅镜以串联方式连接，构成能够同时振荡两种激光模式的双激光模式谐振器，这两种激光模式适合于每种波长。 因此，可以通过使用两种激光模式之间的拍子现象来获得能够进行极高频率（60GHz以上）调制的激光光源。

    METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE
    30.
    发明申请
    METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE 有权
    制造薄膜晶体管和薄膜晶体管基板的方法

    公开(公告)号：US20100140706A1

    公开(公告)日：2010-06-10

    申请号：US12507725

    申请日：2009-07-22

    申请人： Jae Bon KOO ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    发明人： Jae Bon KOO ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78603 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/78618

    摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.

    摘要翻译： 提供了一种可以改善自对准的薄膜晶体管的制造方法。 在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。 接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。 接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。 此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。 接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成 薄膜晶体管。