公开(公告)号：US10520467B2

公开(公告)日：2019-12-31

申请号：US15912174

申请日：2018-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L51/05 ,  H01L51/00 ,  H01L21/84 ,  H01L27/12

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20190394573A1

公开(公告)日：2019-12-26

申请号：US16016996

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun Yin Tsai

IPC: H04R19/04 ,  H04R19/00 ,  H04R31/00

Abstract: A MEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.

公开(公告)号：US10160639B2

公开(公告)日：2018-12-25

申请号：US15193410

申请日：2016-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng ,  Jung-Huei Peng

IPC: H01L29/84 ,  B81C1/00

Abstract: The present disclosure relates to a semiconductor structure for a MEMS device. In some embodiments, the structure includes an interlayer dielectric (ILD) region positioned over a substrate. Further the structure includes an inter-metal dielectric region. The IMD region includes a passivation layer overlying a stacked structure. The stacked structure includes dielectric layers and etch stop layers that are stacked in an alternating fashion. Metal wire layers are disposed within the stacked structure of the IMD region. The structure also includes a sensing electrode electrically connected to the IMD region with an electrode extension via. The structure includes a MEMS substrate comprising a MEMS device having a soft mechanical structure positioned adjacent to the sensing electrode.

公开(公告)号：US20180195998A1

公开(公告)日：2018-07-12

申请号：US15912174

申请日：2018-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L51/00 ,  H01L27/12 ,  H01L21/84

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20180148326A1

公开(公告)日：2018-05-31

申请号：US15716676

申请日：2017-09-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81C1/00 ,  H01L21/82 ,  B81B7/00 ,  H01L23/532

CPC classification number: B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/82 ,  H01L23/53295 ,  H01L2924/1461

Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.

公开(公告)号：US09822000B2

公开(公告)日：2017-11-21

申请号：US15170154

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Jung-Huei Peng

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B3/001 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2203/035 ,  B81C2203/037 ,  B81C2203/0792 ,  H01L2224/16

Abstract: The present disclosure relates an integrated chip having one or more MEMS devices. In some embodiments, the integrated chip has a carrier substrate with one or more cavities disposed within a first side of the carrier substrate. A dielectric layer is disposed between the first side of the carrier substrate and a first side of a micro-electromechanical system (MEMS) substrate. The dielectric layer has sidewalls that are laterally set back from sidewalls of openings extending through the MEMs substrate to the one or more cavities. A bonding structure, including an intermetallic compound having a plurality of metallic elements, abuts a second side of the MEMS substrate and is electrically connected to a metal interconnect layer within a dielectric structure disposed over a CMOS substrate.

公开(公告)号：US09725301B2

公开(公告)日：2017-08-08

申请号：US14525827

申请日：2014-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Shang-Ying Tsai ,  Chin-Wei Liang

IPC: B81B7/02 ,  H01L29/84 ,  H01L21/02 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B7/02 ,  B81C1/00238

Abstract: A structure and a formation method of a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first enclosed space surrounded by the MEMS substrate and the cap substrate, and the first movable element is in the first enclosed space. The MEMS device further includes a second enclosed space surrounded by the MEMS substrate and the cap substrate, and the second movable element is in the second enclosed space. In addition, the MEMS device includes a pressure-changing layer in the first enclosed space.

公开(公告)号：US09695039B1

公开(公告)日：2017-07-04

申请号：US15143762

申请日：2016-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng ,  Kuei-Sung Chang ,  Jung-Huei Peng

IPC: H01L21/00 ,  B81B7/04 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81B7/02 ,  B81C2203/0118

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The device substrate includes a first trench and a second trench. A first MEMS device is disposed over the first trench and a second MEMS device is disposed over the second trench. A first stopper is raised from a first trench bottom surface of the first trench but below a top surface of the device substrate and a second stopper is raised from a second trench bottom surface of the second trench but below the top surface of the device substrate. A first depth of the first trench is greater than a second depth of the second trench.

公开(公告)号：US09567210B2

公开(公告)日：2017-02-14

申请号：US14629738

申请日：2015-02-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Kuei-Sung Chang

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/095 ,  B81C1/00293 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The bonded substrate comprises a first cavity corresponding to a first MEMS device having a first pressure and a second cavity corresponding to a second MEMS device having a different second pressure. The second cavity comprises a major volume and a vent hole connected by a lateral channel disposed between the device substrate and the cap substrate and the vent hole is hermetically sealed by a sealing structure.

Abstract translation: 本公开涉及具有两个具有不同压力的MEMS器件的微机电系统（MEMS）封装以及相关联的形成方法。 在一些实施例中，（MEMS）封装包括结合在一起的器件衬底和帽衬底。 键合衬底包括对应于具有第一压力的第一MEMS器件的第一腔和对应于具有不同第二压力的第二MEMS器件的第二腔。 第二空腔包括主体积和通过设置在装置基板和盖基板之间的横向通道连接的通气孔，并且通气孔由密封结构气密密封。

公开(公告)号：US09487391B2

公开(公告)日：2016-11-08

申请号：US14084161

申请日：2013-11-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81B7/02 ,  B81B2201/0264 ,  B81C1/00238 ,  B81C1/00293

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate, a cap substrate, and a MEMS substrate bonded between the CMOS substrate and the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber and a second closed chamber, which are between the MEMS substrate and the cap substrate. The first movable element is in the first closed chamber, and the second movable element is in the second closed chamber. A first pressure of the first closed chamber is higher than a second pressure of the second closed chamber.

Abstract translation: 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括CMOS衬底，帽衬底和结合在CMOS衬底和帽衬底之间的MEMS衬底。 MEMS基板包括第一可移动元件和第二可移动元件。 MEMS器件还包括位于MEMS衬底和盖衬底之间的第一封闭腔室和第二封闭腔室。 第一可移动元件位于第一封闭室中，第二可移动元件位于第二封闭室中。 第一封闭室的第一压力高于第二封闭室的第二压力。