公开(公告)号：US20190150265A1

公开(公告)日：2019-05-16

申请号：US15868373

申请日：2018-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method includes generating targets with a fuel target generator. The method further includes measuring a period of time during which one of the targets passes through two detection positions on a path along which the targets move. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the fuel target generator or the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value.

公开(公告)号：US20150255272A1

公开(公告)日：2015-09-10

申请号：US14716917

申请日：2015-05-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

IPC: H01L21/027 ,  G03F1/22 ,  G03F7/20

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

公开(公告)号：US20250085215A1

公开(公告)日：2025-03-13

申请号：US18404762

申请日：2024-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Hsiao-Lun CHANG ,  Shang-Chieh CHIEN

IPC: G01N21/31 ,  G01N21/95

Abstract: A method includes positioning a substrate in an optical path of a multiwavelength light source; generating a first detection result by exposing a first region of the substrate to a first light having a first wavelength band selected by the light source; and generating a second detection result by exposing a second region of the substrate to a second light having a second wavelength band selected by the multiwavelength light source. A system includes a multiwavelength light source including a light source and a wavelength selector in an optical path of light generated by the light source. The system further includes a spectrometer operable to measure a spectrum of a first light selected by the wavelength selector; a mask stage operable to position a mask in the optical path; and a controller operable to adjust a parameter of the multiwavelength light source responsive to the spectrum of the first light.

公开(公告)号：US20230284366A1

公开(公告)日：2023-09-07

申请号：US18298927

申请日：2023-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Cho-Ying LIN ,  Sagar Deepak KHIVSARA ,  Hsiang CHEN ,  Chieh HSIEH ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Zhiqiang WU

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/008 ,  H05G2/006 ,  G03F7/7055 ,  G03F7/7085 ,  G03F7/70033

Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

公开(公告)号：US20230273534A1

公开(公告)日：2023-08-31

申请号：US18311795

申请日：2023-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

IPC: G03F7/00 ,  G02B17/06 ,  H05G2/00

CPC classification number: G03F7/70925 ,  G03F7/70033 ,  G02B17/0663 ,  G03F7/70491 ,  H05G2/008 ,  G03F7/70808

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

公开(公告)号：US20230060899A1

公开(公告)日：2023-03-02

申请号：US17461744

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  H05G2/00 ,  G02B17/06

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

公开(公告)号：US20210349396A1

公开(公告)日：2021-11-11

申请号：US17193827

申请日：2021-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/20

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20210223701A1

公开(公告)日：2021-07-22

申请号：US17222109

申请日：2021-04-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jen-Yang CHUNG ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20 ,  G03F1/24 ,  H05G2/00

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

公开(公告)号：US20210041787A1

公开(公告)日：2021-02-11

申请号：US17068197

申请日：2020-10-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20200348241A1

公开(公告)日：2020-11-05

申请号：US16933067

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Shang-Chieh CHIEN ,  Shang-Ying WU ,  Li-Kai CHENG ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG ,  Anthony YEN ,  Chia-Chen CHEN

IPC: G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956 ,  G01N21/94 ,  G01N21/954

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.