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21.发明公开公开(公告)号：US20240224824A1
公开(公告)日：2024-07-04
申请号：US18304601
申请日：2023-04-21
Inventor： Hung-Ju Li , Yu-Wei Ting , Hui Hung Kuo , Chien Ta Huang , Kuo-Pin Chang , Kuo-Ching Huang
CPC classification number: H10N70/8413 , H10N70/011 , H10N70/231 , H10N70/823
Abstract: A device structure includes a heater line located over a substrate, an aluminum nitride layer having an inhomogeneous material composition, and a phase change material line. A top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The PCM line includes a middle portion that overlies the heater line, a first end portion adjoined to a first side of the middle portion, and a second end portion adjoined to a second side of the middle portion.
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公开(公告)号：US11978740B2
公开(公告)日：2024-05-07
申请号：US17674348
申请日：2022-02-17
Inventor： Harry-Hak-Lay Chuang , Kuo-Ching Huang , Wei-Cheng Wu , Hsin Fu Lin , Henry Wang , Chien Hung Liu , Tsung-Hao Yeh , Hsien Jung Chen
IPC: H01L27/12 , H01L21/762 , H01L21/84 , H01L29/66
CPC classification number: H01L27/1203 , H01L21/76251 , H01L21/76283 , H01L21/84 , H01L29/66772
Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.
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23.发明公开公开(公告)号：US20230403954A1
公开(公告)日：2023-12-14
申请号：US17836145
申请日：2022-06-09
Inventor： Kuo-Pin Chang , Yu-Wei Ting , Tsung-Hao Yeh , Kuo-Chyuan Tzeng , Kuo-Ching Huang
IPC: H01L45/00
CPC classification number: H01L45/126 , H01L45/06 , H01L45/1675 , H01L45/144 , H01L45/1226
Abstract: Phase change material (PCM) switches and methods of fabrication thereof that provide improved thermal confinement within a phase change material layer. A PCM switch may include a dielectric capping layer between a heater pad and the phase change material layer of the PCM switch that is laterally-confined such opposing sides of the dielectric capping layer the heater pad may form continuous surfaces extending transverse to the signal transmission pathway across the PCM switch. Heat transfer from the heater pad through the dielectric capping layer to the phase change material layer may be predominantly vertical, with minimal thermal dissipation along a lateral direction. The localized heating of the phase change material may improve the efficiency of the PCM switch enabling lower bias voltages, minimize the formation of regions of intermediate resistivity in the PCM switch, and improve the parasitic capacitance characteristics of the PCM switch.
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24.发明公开公开(公告)号：US20230361057A1
公开(公告)日：2023-11-09
申请号：US17735590
申请日：2022-05-03
Inventor： Kuen-Yi Chen , Yi Ching Ong , Kuo-Ching Huang , Harry-Hak-Lay Chuang
CPC classification number: H01L27/16 , H01L23/58 , H01M50/11 , H01M10/465
Abstract: A semiconductor structure may be located over a substrate, and may include a parallel connection of a first component and a second component. The first component includes a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a metal-antiferroelectric-metal capacitor. The second component includes a battery structure. The semiconductor structure may be used as a combination of an energy harvesting device and an energy storage structure that utilizes heat from adjacent semiconductor devices or from other heat sources.
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公开(公告)号：US09286973B2
公开(公告)日：2016-03-15
申请号：US14034717
申请日：2013-09-24
Inventor： Chih-Yang Chang , Wen-Ting Chu , Yu-Wei Ting , Chun-Yang Tsai , Kuo-Ching Huang
CPC classification number: G11C13/0021 , G11C13/0002 , G11C13/0038 , G11C13/0069 , G11C2013/0071 , G11C2013/0083 , G11C2213/79
Abstract: A device and method for forming resistive random access memory cell are provided. The method includes: providing a first voltage to a first word line connected to a first RRAM cell to form the first RRAM cell; and providing a negative voltage to a second word line connected to a second RRAM cell that shares a first source line and a first bit line with the first RRAM cell. An exemplary device includes: a first RRAM cell, a second RRAM cell, a first voltage source and a charge pump circuit. The first RRAM cell is connected to a first word line. The second RRAM cell is connected to a second word line. The first voltage source provides a first voltage to the first word line to form the first RRAM cell. The charge pump circuit provides a negative voltage to the second word line.
Abstract translation: 提供一种用于形成电阻随机存取存储单元的装置和方法。 该方法包括：向连接到第一RRAM单元的第一字线提供第一电压以形成第一RRAM单元; 以及向连接到与第一RRAM单元共享第一源极线和第一位线的第二RRAM单元的第二字线提供负电压。 示例性设备包括：第一RRAM单元，第二RRAM单元，第一电压源和电荷泵电路。 第一个RRAM单元连接到第一个字线。 第二RRAM单元连接到第二字线。 第一电压源向第一字线提供第一电压以形成第一RRAM单元。 电荷泵电路向第二字线提供负电压。
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Patent Agency Ranking
公开(公告)号：US20240389486A1
公开(公告)日：2024-11-21
申请号：US18317120
申请日：2023-05-15
Inventor： Kuo-Pin Chang , Yu-Wei Ting , Kuo-Ching Huang
IPC: H10N79/00
Abstract: A device structure includes a parallel connection of capacitor-switch assemblies located over a substrate. The capacitor-switch assemblies include a first capacitor-switch assembly that includes a first series connection of a first capacitor and a first non-Ohmic switching device, which has a first threshold voltage and includes a first primary switch electrode, a first secondary switch electrode, and a first non-Ohmic switching material portion. The capacitor switch assemblies further include a second capacitor-switch assembly that includes a second series connection of a second capacitor and a second non-Ohmic switching device, which has a second threshold voltage and includes a second primary switch electrode, a second secondary switch electrode, and a second non-Ohmic switching material portion. The second threshold voltage is different from the first threshold voltage. The non-Ohmic switching devices may be conditionally turned on depending on a magnitude of applied voltage spikes.
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27.发明公开公开(公告)号：US20240355949A1
公开(公告)日：2024-10-24
申请号：US18761681
申请日：2024-07-02
Inventor： Fu-Hai Li , Yi Ching Ong , Kuo-Ching Huang
IPC: H01L31/07 , H01L31/053 , H01L31/18
CPC classification number: H01L31/07 , H01L31/053 , H01L31/18
Abstract: A semiconductor structure may include semiconductor devices located on a substrate, metal interconnect structures that are located within dielectric material layers overlying the semiconductor devices and are electrically connected to the semiconductor devices, and an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode
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28.发明公开公开(公告)号：US20240276893A1
公开(公告)日：2024-08-15
申请号：US18327432
申请日：2023-06-01
Inventor： Hung-Ju Li , Kuo-Ching Huang , Yu-Wei Ting , Kuo-Pin Chang
CPC classification number: H10N70/231 , H10N70/011 , H10N70/8413 , H10N70/8828
Abstract: Phase change material (PCM) switches and methods of fabrication thereof that include a phase change material layer and a selector having a first electrode and an ovonic threshold switching (OTS) material layer. The first electrode may selectively apply a bias voltage to the OTS layer, causing localized heating within the OTS layer. The phase change material layer may be in thermal contact with the OTS layer such that the OTS layer may heat an active region of the phase change material layer. By controlling the voltage applied to the first electrode and the resultant heating within the OTS layer, the active region of the phase change material layer may be selectively transitioned between a high resistivity state and a low resistivity state. A PCM switch according to various embodiments may enable low power and fast switching between high resistivity and low resistivity states and reduced parasitic capacitance.
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公开(公告)号：US09576656B2
公开(公告)日：2017-02-21
申请号：US14061092
申请日：2013-10-23
Inventor： Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0007 , G11C2013/0078 , G11C2213/72 , G11C2213/79
Abstract: A device and method for setting a resistive random access memory cell are provided. An exemplary method includes: providing a set current to a bit line of the RRAM cell by a current source. An exemplary device includes: a first RRAM cell and a current source. The first RRAM cell is connected to a first word line. The current source selectively connected to the first bit line. The current source selectively provides a current to the first bit line of the first RRAM cell to set the first RRAM cell.
Abstract translation: 提供了一种用于设置电阻随机存取存储单元的装置和方法。 一种示例性方法包括：通过电流源将设定电流提供给RRAM单元的位线。 示例性设备包括：第一RRAM单元和电流源。 第一个RRAM单元连接到第一个字线。 电流源选择性地连接到第一位线。 电流源选择性地向第一RRAM单元的第一位线提供电流以设置第一RRAM单元。
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30.发明授权Resistive random access memory and method of resetting a resistive random access memory 有权电阻随机存取存储器和复位电阻随机存取存储器的方法公开(公告)号：US09343151B1
公开(公告)日：2016-05-17
申请号：US14593075
申请日：2015-01-09
Inventor： Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
CPC classification number: G11C13/0097 , G11C13/0002 , G11C13/003 , G11C13/0064 , G11C13/0069 , G11C2013/0066 , G11C2013/0071 , G11C2213/79
Abstract: According to another embodiment, a method of a reset operation for a RRAM is provided. The method includes the following operations: providing a first voltage to the dielectric side electrode of the resistor; and providing a second voltage to a gate of the transistor, wherein the first voltage in a second loop is lower than that in a first loop, and the second voltage in the second loop is higher than that in the first loop.
Abstract translation: 根据另一实施例，提供了一种用于RRAM的复位操作的方法。 该方法包括以下操作：向电阻器的电介质侧电极提供第一电压; 以及向所述晶体管的栅极提供第二电压，其中第二回路中的第一电压低于第一回路中的第一电压，并且第二回路中的第二电压高于第一回路中的第二电压。
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