公开(公告)号：US6114764A

公开(公告)日：2000-09-05

申请号：US745305

申请日：1996-11-12

申请人： Kazuhiro Hoshino ,  Takaaki Miyamoto

发明人： Kazuhiro Hoshino ,  Takaaki Miyamoto

IPC分类号： H01L21/28 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/43

CPC分类号： H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76882 ,  Y10S257/915

摘要： A semiconductor device, comprising: an insulating layer formed on a semiconductor body; a barrier metal layer comprising titanium nitride formed on the insulating layer; and a n aluminum based alloy layer formed on the barrier metal layer, provided that the aluminum based alloy crystals constituting the aluminum based alloy layer have the crystallographic axis thereof inclined by an angle of from 0 to 5 degrees with respect to the normal of the barrier metal layer on the insulating layer. Also claimed is a process for fabricating the semiconductor device.

摘要翻译： 一种半导体器件，包括：形成在半导体本体上的绝缘层; 包含在所述绝缘层上形成的氮化钛的阻挡金属层; 以及形成在阻挡金属层上的铝基合金层，只要构成铝基合金层的铝基合金晶体的晶体<111>轴相对于0°的法线倾斜0〜5度的法线 绝缘层上的阻挡金属层。 还要求保护的是制造半导体器件的工艺。

公开(公告)号：US5315062A

公开(公告)日：1994-05-24

申请号：US795545

申请日：1991-11-21

申请人： Kazuhiro Hoshino

发明人： Kazuhiro Hoshino

IPC分类号： H01R4/70 ,  H01R13/506 ,  H01R13/516 ,  H01R13/52 ,  H01R13/58 ,  H02G3/04 ,  H02G3/06 ,  H02G3/08 ,  H01R13/62 ,  H01R13/627

CPC分类号： H01R13/516 ,  H01R13/506 ,  H02G3/0691

摘要： A connector cover for a wire harness includes a main cover composed of a hinged pair of half case bodies and a secondary cover composed of a hinged pair of semicylindrical bodies. The main cover is formed with an opening for affixing to the back of the connector and a circular opening with a circular ridge elongating inside surface for passing the wire extending from the connector when the half case bodies are closed. The secondary cover has both ends opened for receiving the wire harness and is formed with a cylindrical opening with a channel grove extending therearound for passing the wire when the semicylindrical bodies are closed, and is connected to the main cover such that the circular ridge of the main cover fits in the channel groove around the cylindrical opening. Accordingly, the secondary cover can rotate with respect to the main cover.

摘要翻译： 用于线束的连接器盖包括由铰接的一对半壳体构成的主盖和由铰接的一对半圆柱体构成的次盖。 主盖形成有用于固定到连接器的背面的开口和具有延伸的内表面的圆形脊的圆形开口，用于当半壳体关闭时使从连接器延伸的线通过。 辅助盖的两端打开以接收线束，并且形成有圆柱形开口，其中在半圆柱体关闭时通过线路延伸的通道槽，并且连接到主盖，使得圆形凸起 主盖适合在圆柱形开口周围的槽槽中。 因此，副盖可以相对于主盖旋转。

公开(公告)号：US4910169A

公开(公告)日：1990-03-20

申请号：US097739

申请日：1987-09-17

申请人： Kazuhiro Hoshino

发明人： Kazuhiro Hoshino

IPC分类号： H01L21/31 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76886 ,  H01L21/32051 ,  H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002

摘要： A method of producing a semiconductor device includes the steps of forming a metallization film including copper on a surface of a substrate, and depositing an insulating film on a surface of the metallization film at a temperature which is below the oxidation temperature of copper.

公开(公告)号：US20050173618A1

公开(公告)日：2005-08-11

申请号：US11053626

申请日：2005-02-08

申请人： Toshinobu Sugiyama ,  Shinichi Yoshimura ,  Ryoji Suzuki ,  Kazuhiro Hoshino

发明人： Toshinobu Sugiyama ,  Shinichi Yoshimura ,  Ryoji Suzuki ,  Kazuhiro Hoshino

IPC分类号： H01L27/146 ,  G01C3/06 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H04N9/07 ,  H01L27/00 ,  H04N1/04

CPC分类号： H04N5/335 ,  H01L27/14609 ,  H04N5/374 ,  H04N5/3742

摘要： An arithmetic circuit, which is retained by each pixel in a conventional image sensor, is shared by each column. Signal processing circuits of different configurations are provided on signal transmission paths in an upward direction and a downward direction of a vertical signal line for extracting an image signal from each pixel, whereby image output processing and arithmetic processing are performed completely separately by the different circuit blocks. Thus, image quality of an actual image is improved and optimum design for arithmetic processing is made possible. Specifically, an I-V converter circuit unit, a CDS circuit unit and the like are provided on the image output side. A current mirror circuit unit, an analog memory array unit, a comparator unit, a bias circuit unit, a data latch unit, an output data bus unit and the like are provided on the arithmetic processing side.

公开(公告)号：US6111318A

公开(公告)日：2000-08-29

申请号：US9271

申请日：1998-01-20

申请人： Kazuhiro Hoshino

发明人： Kazuhiro Hoshino

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L23/53238 ,  H01L2924/0002

摘要： A wiring layer 17' of a semiconductor device is formed, at first, by forming a Cu--Ta film 15 by adding 0.5 weight % of Ta in Cu on a barrier metal layer, and then, by forming a cap metal layer on the film 15. The wiring layer 17' is then etched with a high temperature RIE method. After this, the wiring layer 17' is heat-treated at about 450 .degree. C. for about 120 minutes in a hydrogen reduction atmosphere. With this heat treatment, Ta is precipitated at the grain boundaries of Cu of the Cu--Ta layer 15. Since Ta does not tend to be alloyed with Cu easily and has low solid solubility in Cu crystal, Ta is precipitated at the grain boundaries of Cu by the above heat treatment. When Ta is precipitated at the grain boundaries of Cu such way, grain boundary diffusion is suppressed to generate less voids, so that the resistance to EM is improved.

摘要翻译： 首先，通过在阻挡金属层上添加0.5重量％的Cu中的Ta，然后通过在膜上形成帽金属层，形成Cu-Ta膜15，形成半导体器件的布线层17' 然后用高温RIE方法蚀刻布线层17'。 之后，在氢还原气氛中，在约450℃下热处理布线层17'约120分钟。 通过这种热处理，Ta在Cu-Ta层15的Cu的晶界处析出。由于Ta不容易与Cu合金化并且在Cu晶体中具有低的固溶度，因此在晶界的晶界析出Ta Cu经上述热处理。 当Ta在Cu的晶界处析出时，晶界扩散被抑制以产生较少的空隙，从而提高了对EM的抗性。

公开(公告)号：US5972786A

公开(公告)日：1999-10-26

申请号：US478910

申请日：1995-06-07

申请人： Kazuhiro Hoshino ,  Yukiyasu Sugano

发明人： Kazuhiro Hoshino ,  Yukiyasu Sugano

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/28568

摘要： A process for forming wiring over a migration preventing layer on a semiconductor substrate including forming a contact hole in a an insulation layer of the substrate and then filling the contact hole with an aluminum based alloy. A migration preventing layer is then formed, of a material which resists migration of atoms of the aluminum based alloy, over the surface of the aluminum based alloy. A wiring layer of aluminum is then formed over the migration preventing layer. In another embodiment, the contact hole may be provided with a first layer to prevent electron migration and a second layer which is a nitride of the first layer material.

摘要翻译： 一种用于在半导体衬底上的防迁移层上形成布线的工艺，包括在基板的绝缘层中形成接触孔，然后用铝基合金填充接触孔。 然后，在铝基合金的表面上形成防止铝基合金的原子迁移的材料的防迁移层。 然后在迁移防止层上形成铝的布线层。 在另一个实施例中，接触孔可以设置有防止电子迁移的第一层和作为第一层材料的氮化物的第二层。

公开(公告)号：US5532600A

公开(公告)日：1996-07-02

申请号：US329401

申请日：1994-10-27

申请人： Kazuhiro Hoshino

发明人： Kazuhiro Hoshino

IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L21/66 ,  G01R27/08

CPC分类号： G01R31/2858 ,  G01R31/2853

摘要： Disclosed is a method of and an apparatus for evaluating the reliability of metal interconnects. It is capable of performing the evaluation under such a testing condition as to reproduce an actual operating environment, that is, under the testing condition of simultaneously accelerating electromigration and stress-induced migration, thereby evaluating failures conventionally missed to be evaluated. In particular, this method is applicable for evaluating the reliability of metal interconnects of semiconductor devices, and which includes the steps of performing a constant-temperature storage test I for interconnect reliability evaluation at a temperature over a specified temperature for a specified time; and applying a current to the interconnect and simultaneously performing a test II of measuring a voltage of the interconnect.

摘要翻译： 公开了一种用于评估金属互连的可靠性的方法和装置。 能够在这样的测试条件下进行评估，以再现实际的操作环境，即在同时加速电迁移和应力诱导迁移的测试条件下，从而评估通常被遗漏的待评估的故障。 特别地，该方法适用于评价半导体器件的金属互连的可靠性，包括以下步骤：在规定温度以上的温度下进行规定时间的互连可靠性评价的恒温存储试验I。 并且向互连件施加电流并且同时执行测量互连电压的测试II。

公开(公告)号：US20120205146A1

公开(公告)日：2012-08-16

申请号：US13390403

申请日：2010-08-11

申请人： Ryoichi Oguro ,  Kazuhiro Hoshino

发明人： Ryoichi Oguro ,  Kazuhiro Hoshino

IPC分类号： H05K1/09 ,  C25D5/10 ,  B32B15/00 ,  B32B37/10 ,  B32B15/04

CPC分类号： H05K3/384 ,  B32B15/08 ,  B32B15/20 ,  C23C18/122 ,  C25D1/04 ,  C25D3/32 ,  C25D3/38 ,  C25D5/10 ,  C25D5/16 ,  C25D5/48 ,  C25D7/0614 ,  C25D11/38 ,  H05K1/0242 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0723 ,  Y10T428/12535 ,  Y10T428/12549 ,  Y10T428/12792

摘要： Disclosed is a copper foil which has excellent high frequency characteristics and heat resistance, while achieving high heat-resistant adhesion to a resin substrate at the same time. Specifically disclosed is a heat-resistant copper foil which has a configuration wherein a first roughened surface layer which has been treated by a first roughening treatment by copper metal, a second roughened surface layer which has been treated by a second roughening treatment by copper metal, and a third treated surface layer which has been treated by a third treatment process by zinc metal are sequentially provided on one surface of an untreated copper foil. Also specifically disclosed are: a circuit board which is obtained by laminating the heat-resistant copper foil on a flexible resin substrate or a rigid resin substrate; and a method for producing a copper-clad laminate wherein the heat-resistant copper foil and a heat-resistant resin substrate are thermally pressure-bonded and the roughened copper metal and the third treated surface layer of the zinc metal are alloyed.

摘要翻译： 公开了一种具有优异的高频特性和耐热性的铜箔，同时对树脂基板实现高耐热粘合性。 具体公开了一种耐热铜箔，其具有通过铜金属的第一粗糙化处理进行了处理的第一粗糙化表面层，通过铜金属进行第二粗糙化处理的第二粗糙化表面层， 并且在未处理的铜箔的一个表面上依次设置通过第三处理工艺用锌金属处理的第三处理表面层。 还具体公开的是：通过将耐热铜箔层压在柔性树脂基板或刚性树脂基板上而获得的电路板; 以及一种制造覆铜层压板的方法，其中耐热铜箔和耐热树脂基板被热压粘合，并且将粗糙的铜金属和第三被处理的锌金属表面层合金化。

公开(公告)号：US20120111613A1

公开(公告)日：2012-05-10

申请号：US13384084

申请日：2010-07-07

申请人： Ryoichi Oguro ,  Kouji Kase ,  Kazuhiro Hoshino

发明人： Ryoichi Oguro ,  Kouji Kase ,  Kazuhiro Hoshino

IPC分类号： H05K1/09 ,  C23C28/02 ,  B32B15/04 ,  H05K1/02 ,  B32B15/01

CPC分类号： C25D5/48 ,  C23C30/00 ,  C25D1/04 ,  C25D3/562 ,  C25D5/34 ,  C25D7/0628 ,  C25D11/38 ,  H05K1/167 ,  H05K3/384 ,  H05K3/389 ,  H05K2201/0355 ,  H05K2203/0307 ,  Y10T428/12049 ,  Y10T428/12076

摘要： A copper foil with a resistance layer is provided, wherein the variation value is small when it is made into a resistance element, the adhesion with the resin substrate to be laminated with is able to be sufficiently maintained, which has an excellent characteristics as a resistance element for a rigid and a flexible substrate. A copper foil with a resistance layer of the present invention comprises a copper foil on one surface of which a metal layer or alloy layer is formed from which a resistance element is to be formed, the surface of the metal layer or alloy layer being subjected to a roughening treatment with nickel particles. A method of production of a copper foil with a resistance layer of the present invention comprises: forming a resistance layer of phosphorus-containing nickel on a matte surface of an electrodeposited copper foil having crystals comprised of columnar crystal grains wherein a foundation of the matte surface is within a range of 2.5 to 6.5 μm in terms of Rz value prescribed in JIS-B-0601; and performing roughening treatment to a surface of the resistance layer with nickel particles wherein a roughness is within a range of 4.5 to 8.5 μm in terms of Rz value prescribed in JIS-B-0601. The alloy layer is for example formed from phosphorus-containing nickel.

摘要翻译： 提供了具有电阻层的铜箔，其中当制成电阻元件时其变化值较小，能够充分保持与要层压的树脂基板的粘附性，其具有作为电阻的优异特性 用于刚性和柔性基底的元件。 本发明的具有电阻层的铜箔的一个表面上形成有形成有电阻元件的金属层或合金层的铜箔，金属层或合金层的表面经受 用镍颗粒进行粗糙处理。 本发明的具有电阻层的铜箔的制造方法包括：在具有由柱状晶粒构成的结晶的电沉积铜箔的无光泽表面上形成含磷镍电阻层，其中， 在JIS-B-0601中规定的Rz值为2.5〜6.5μm的范围内。 并且以JIS-B-0601中规定的Rz值为基准的粗糙度在4.5〜8.5μm的范围内的镍粒子对电阻层的表面进行粗糙化处理。 合金层例如由含磷的镍形成。

公开(公告)号：US07825964B2

公开(公告)日：2010-11-02

申请号：US11895528

申请日：2007-08-24

申请人： Kazuhiro Hoshino ,  Hirofumi Sumi

发明人： Kazuhiro Hoshino ,  Hirofumi Sumi

IPC分类号： H04N5/228 ,  H04N5/217 ,  G06K9/40 ,  G06K9/36 ,  G06K9/64

CPC分类号： H04N9/646

摘要： A method of processing noise in image data by an image processor having a signal-processing portion converting an image signal from an image sensor into a digital signal and outputting the converted signal as image data for each frame, the image data indicating sets of pixel values each having a brightness at a corresponding one of coordinate points arranged in directions of rows and columns is disclosed. The method includes the steps of: extracting pixel values; deciding pixel value; finding autocorrelation coefficients of pixel values which are less than a first threshold value; and deciding random noise in the image.

摘要翻译： 一种通过图像处理器处理图像数据中的噪声的方法，所述图像处理器具有将来自图像传感器的图像信号转换成数字信号的信号处理部分，并且将转换的信号作为每帧的图像数据输出，所述图像数据指示像素值集合 公开了在行和列的方向上布置的坐标点的相应一个处的亮度。 该方法包括以下步骤：提取像素值; 决定像素值; 找到小于第一阈值的像素值的自相关系数; 并决定图像中的随机噪声。