Phenylacetic acid derivative
    21.
    发明授权
    Phenylacetic acid derivative 有权
    苯乙酸衍生物

    公开(公告)号:US08148421B2

    公开(公告)日:2012-04-03

    申请号:US12440540

    申请日:2007-09-10

    IPC分类号: A61K31/382 C07D335/02

    摘要: A compound represented by the formula (1) or a salt thereof ( represents a single bond, or a double bond; R1 represents hydrogen atom, or an alkyl group; R2 and R3 represent hydrogen atom, or an alkyl group; R4 and R5 represent hydrogen atom, hydroxy group, an alkoxyl group, a halogen atom, or a mono- or di-alkyl-substituted amino group; R6 represents hydrogen atom, cyano group, an alkoxycarbonyl group, or carboxy group; R7 represents one or two of substituents on the benzene ring (the substituents are selected from hydrogen atom, a halogen atom, nitro group, cyano group, hydroxy group, amino group, an alkyl group, and an alkoxyl group); A represents a 5-membered or 6-membered non-aromatic heterocyclic ring containing one or two contiguous sulfur atoms (the sulfur atoms may independently form oxide); W represents oxo group, hydrogen atom, an alkyl group, hydroxy group, an alkoxyl group, or a halogen atom; and X represents oxygen atom, or sulfur atom), or a salt thereof, which has a superior suppressing action against prostaglandin E2 production and is useful as an active ingredient of medicaments with reduced adverse reactions such as gastrointestinal disorders.

    摘要翻译: 由式(1)表示的化合物或其盐(表示单键或双键; R1表示氢原子或烷基; R2和R3表示氢原子或烷基; R4和R5表示 氢原子,羟基,烷氧基,卤素原子或一或二烷基取代的氨基; R 6表示氢原子,氰基,烷氧基羰基或羧基; R 7表示一个或两个取代基 在苯环上(取代基选自氢原子,卤素原子,硝基,氰基,羟基,氨基,烷基和烷氧基); A表示5元或6元非 含有一个或两个相邻硫原子的杂环(硫原子可以独立地形成氧化物); W表示氧代基,氢原子,烷基,羟基,烷氧基或卤素原子; X表示氧原子 ,或硫原子)或其盐 对前列腺素E2产生的抑制作用较差,并且可用作具有减少的不良反应如胃肠道疾病的药物的活性成分。

    Apparatus and method for symbol information reading
    22.
    发明授权
    Apparatus and method for symbol information reading 有权
    符号信息读取的装置和方法

    公开(公告)号:US08146818B2

    公开(公告)日:2012-04-03

    申请号:US12415431

    申请日:2009-03-31

    申请人: Hiroshi Nakamura

    发明人: Hiroshi Nakamura

    IPC分类号: G06K7/10

    CPC分类号: G06K7/14 G06K7/1443

    摘要: A symbol information reading apparatus may include an imaging element; an image memory structured to store image data; a position detecting processor structured to fetch the image data and structured to detect a position of symbol information. The position detecting processor may include a temporary area judgment unit that structured to calculate a variation of brightness, and structured to judge a temporary area having a possibility of corresponding to the symbol information; a correlation map creating unit that structured to calculate correlation between areas neighboring in a direction perpendicular to the scanning direction, and structured to create a map showing an area provided with large correlation values; a labeling unit that structured to check presence of a basic barcode on the correlation map, and structured to label an area judged as having the basic barcode; and a position determining unit that structured to detect a position of the symbol information recorded.

    摘要翻译: 符号信息读取装置可以包括成像元件; 构造成存储图像数据的图像存储器; 位置检测处理器,被构造成获取图像数据并构造成检测符号信息的位置。 位置检测处理器可以包括临时区域判断单元,其被构造为计算亮度的变化,并被构造为判断具有与符号信息相对应的可能性的临时区域; 相关图生成单元,其构造为计算与扫描方向垂直的方向相邻的区域之间的相关性,并且构造成生成表示具有大相关值的区域的地图; 标记单元,其被构造为检查所述相关图上的基本条形码的存在,并且被构造成标记被判断为具有所述基本条形码的区域; 以及位置确定单元,其被构造成检测记录的符号信息的位置。

    Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
    23.
    发明授权
    Semiconductor memory device using only single-channel transistor to apply voltage to selected word line 有权
    半导体存储器件仅使用单通道晶体管对所选字线施加电压

    公开(公告)号:US08130589B2

    公开(公告)日:2012-03-06

    申请号:US13109694

    申请日:2011-05-17

    IPC分类号: G11C8/00

    摘要: A semiconductor memory device has a memory cell array, a first transistor of a first conductivity type, a second transistor of a second conductivity type and a third transistor of the first conductivity type. A source or drain of the first transistor is connected to each of word lines. A drain of the second transistor is connected to a gate of the first transistor. A source of the third transistor is connected to the gate of the first transistor. The gates of the second transistor and the third transistor are not connected, a source of the second transistor is not connected to a drain of the third transistor, and the gate of the second transistor and the drain of the third transistor have different voltage levels corresponding to opposite logic levels each other.

    摘要翻译: 半导体存储器件具有存储单元阵列,第一导电类型的第一晶体管,第二导电类型的第二晶体管和第一导电类型的第三晶体管。 第一晶体管的源极或漏极连接到每条字线。 第二晶体管的漏极连接到第一晶体管的栅极。 第三晶体管的源极连接到第一晶体管的栅极。 第二晶体管和第三晶体管的栅极不连接,第二晶体管的源极不连接到第三晶体管的漏极,并且第二晶体管的栅极和第三晶体管的漏极具有不同的电压电平 彼此相反的逻辑水平。

    Method and apparatus for magnetic character recognition
    24.
    发明授权
    Method and apparatus for magnetic character recognition 有权
    用于磁性字符识别的方法和装置

    公开(公告)号:US08121384B2

    公开(公告)日:2012-02-21

    申请号:US12123090

    申请日:2008-05-19

    申请人: Hiroshi Nakamura

    发明人: Hiroshi Nakamura

    IPC分类号: G06K9/00

    CPC分类号: G07D7/04 G06K7/084 G06K9/186

    摘要: A method for magnetic character recognition may include preparing standard array data of peak intervals; generating a regeneration waveform out of a character string of magnetic characters printed on a surface of an information data recording medium; segmenting a character waveform of each magnetic character out of the regeneration waveform; generating array data of peak intervals out of an array pattern of a plurality of intervals between peaks that are included in the character waveform; and comparing the array data of peak intervals with the standard array data of peak intervals; wherein, based on a comparison result of comparing the array data of peak intervals with the standard array data of peak intervals, a read character is identified with a character corresponding to an array data of peak intervals that shows the highest coincidence.

    摘要翻译: 用于磁性字符识别的方法可以包括准备峰值间隔的标准阵列数据; 从印刷在信息数据记录介质的表面上的磁性字符的字符串中产生再生波形; 从再生波形中分割每个磁性字符的字符波形; 从包括在所述字符波形中的峰之间的多个间隔的阵列图形中生成峰值间隔的阵列数据; 并将峰值间隔的阵列数据与峰间隔的标准阵列数据进行比较; 其中,基于将峰值间隔的阵列数据与峰值间隔的标准阵列数据进行比较的比较结果,以与显示最高重合的峰值间隔的阵列数据相对应的字符来识别读取的字符。

    Substrate treatment method
    25.
    发明授权
    Substrate treatment method 有权
    底物处理方法

    公开(公告)号:US08110325B2

    公开(公告)日:2012-02-07

    申请号:US13022811

    申请日:2011-02-08

    IPC分类号: G03F9/00 G03C5/00

    摘要: A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.

    摘要翻译: 一种基板处理方法,包括:第一处理工艺(S13至S16),用于对形成第一抗蚀剂的基板进行曝光,加热和显影,从而形成第一抗蚀剂图案;以及第二处理工艺(S17至S20),用于形成 在其上形成第一抗蚀剂图案的基板上的第二抗蚀剂膜,暴露,加热和显影其上形成有第二抗蚀剂膜的基板,从而形成第二抗蚀剂图案。 此外,基板处理方法在第二处理工序中基于第二抗蚀剂图案的线宽度的测量值和第二处理条件在第一处理工艺(S22至S25)中补偿第一处理条件(S26至S29) 基于第一抗蚀剂图案的线宽的测量值。

    LABEL AUTOMATIC APPLICATION DEVICE AND LABEL AUTOMATIC APPLICATION METHOD
    28.
    发明申请
    LABEL AUTOMATIC APPLICATION DEVICE AND LABEL AUTOMATIC APPLICATION METHOD 审中-公开
    标签自动应用设备和标签自动应用方法

    公开(公告)号:US20110284154A1

    公开(公告)日:2011-11-24

    申请号:US13147410

    申请日:2010-03-01

    申请人: Hiroshi Nakamura

    发明人: Hiroshi Nakamura

    IPC分类号: B32B38/10 B32B41/00 B32B37/02

    CPC分类号: B65C9/18 B65C2009/1888

    摘要: The present invention is to provide a label automatic application device and a label automatic application method capable of easily removing a large number of single labels one by one from a label band body formed by coupling the single labels while displacing and overlapping the labels with each other in the longitudinal direction, so as to automatically apply a large amount of labels to application bodies per unit time.A label band body 8 formed by displacing a little and overlapping many single labels with each other is attached to a label transfer belt conveyor 32. The label transfer belt conveyor 32 to which the label band body 8 is attached and a product transfer belt conveyor 52 for moving application bodies 54 are arranged so that the forward directions thereof are the opposite directions to each other. The air is jetted by an air jet means 38 to a surface onto which a bonding means 5 is coated in a front end 1y of a lead label 1a of the label band body 8. The surface onto which the bonding means 5 is coated in the front end 1y of the lead label 1a is warped in the inversion direction and rolled up outward, so that the application body 54 easily comes into contact with the bonding means 5 of the front end 1y.

    摘要翻译: 本发明提供一种标签自动应用装置和标签自动应用方法,其能够从通过连接单个标签形成的标签带体逐个地移除大量单个标签,同时使标签彼此移位和重叠 在纵向方向上,以便每单位时间自动地向应用体施加大量的标签。 标签转印带式输送机32附着标签带主体8的标签转印带式输送机32和产品转印带式输送机52 用于移动的施加体54被布置成使得其向前方向彼此相反。 空气由空气喷射装置38喷射到在标签带体8的引线标签1a的前端1y中涂覆有粘合装置5的表面。粘合装置5的表面被涂覆在 引线标签1a的前端1y在反转方向上翘曲并向外卷起,使得施加体54容易与前端1y的接合装置5接触。

    Molecular assembly
    29.
    发明授权
    Molecular assembly 有权
    分子装配

    公开(公告)号:US08063207B2

    公开(公告)日:2011-11-22

    申请号:US12237795

    申请日:2008-09-25

    IPC分类号: C07F9/80 C07F15/00

    CPC分类号: C07F15/0066

    摘要: A molecular assembly comprising a host metal complex with a space formed therein, and compounds having substituents enclosed in the metal complex within the space and molecular chains bonded to the substituents and extending to the exterior of the metal complex, wherein two or more substituents are enclosed in the same space of the metal complex.

    摘要翻译: 包含其中形成有空间的主体金属络合物的分子组合物,以及封闭在空间内的金属络合物中的取代基和与取代基键合并延伸至金属络合物外部的分子链的化合物,其中封闭了两个或多个取代基 在同一个空间的金属复合体。

    Nonvolatile semiconductor memory device
    30.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号:US08000147B2

    公开(公告)日:2011-08-16

    申请号:US12781396

    申请日:2010-05-17

    IPC分类号: G11C11/34 G11C16/04 G11C16/06

    摘要: A NAND cell unit includes memory cells which are connected in series. An erase operation is effected on all memory cells. Then, a soft-program voltage, which is opposite in polarity to the erase voltage applied in an erase operation, is applied to all memory cells, thereby setting all memory cells out of an over-erased state. Thereafter, a program voltage of 20V is applied to the control gate of a selected memory cell, 0V is applied to the control gates of the two memory cells provided adjacent to the selected memory cell, and 11V is applied to the control gates of the remaining memory cells. Data is thereby programmed into the selected memory cell. The time for which the program voltage is applied to the selected memory cell is adjusted in accordance with the data to be programmed into the selected memory cell. Hence, data “0” can be correctly programmed into the selected memory cell, multi-value data can be read from any selected memory cell at high speed.

    摘要翻译: NAND单元单元包括串联连接的存储单元。 对所有存储单元进行擦除操作。 然后,将与擦除操作中施加的擦除电压极性相反的软编程电压施加到所有存储单元,从而将所有存储单元设置为过擦除状态。 此后,将20V的编程电压施加到所选择的存储单元的控制栅极,将0V施加到与所选存储单元相邻设置的两个存储单元的控制栅极,并且将11V施加到其余的控制栅极 记忆细胞 因此数据被编程到所选择的存储单元中。 根据要编程到所选择的存储单元中的数据来调整对所选存储单元施加编程电压的时间。 因此,可以将数据“0”正确地编程到所选择的存储单元中,可以从任何选择的存储单元高速读取多值数据。