摘要:
To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.
摘要:
To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.
摘要:
A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.
摘要:
An optical recording medium contains a recording layer being composed of a phase-change recording material where at least four elements, Ga, Sb, Sn and Ge are contained and the transfer linear velocity is 20 m/s to 30 m/s, and when the wavelength of a recording/reproducing light is within the range of 650 nm to 665 nm and the recording linear velocity is 20 m/s to 28 m/s, the refractive index Nc and the extinction coefficient Kc in a crystalline state and the refractive index Na and the extinction coefficient Ka in an amorphous state in the recording layer respectively satisfy the following numerical expressions: 2.0≦Nc≦3.0, 4.0≦Kc≦5.0, 4.0≦Na≦5.0, and 2.5≦Ka≦3.1, and information is recordable at the range of 20 m/s to 28 m/s of recording linear velocity.
摘要:
A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length TCPn of a final cooling pulse is determined in accordance with the scanning speed v using the following functions, in v
摘要翻译:光记录介质的记录方法包括用m个脉冲组的激光照射介质,每个脉冲组包括加热脉冲和冷却脉冲,其中m是自然数; 并且以扫描速度v用激光扫描介质,以记录每个长度为nT的标记,其中n为3或更大的自然数,T为时钟周期,其中确定最终冷却脉冲的长度TCPn 根据使用以下功能的扫描速度v,在v v0,TCPn / T = f1,n(v)v v0,TCPn / T = f2,n(v)中,其中,f1,n(v) f2,n(v)表示扫描速度v的连续函数,满足异常标记的存在比为1.0×10 -4以下,v0为可选择扫描速度的条件。
摘要:
A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length TCPn of a final cooling pulse is determined in accordance with the scanning speed v using the following functions, in v
摘要翻译:光记录介质的记录方法包括用m个脉冲组的激光照射介质,每个脉冲组包括加热脉冲和冷却脉冲,其中m是自然数; 并且以扫描速度v用激光扫描介质,以记录每个长度为nT的标记,其中n为3或更大的自然数,T为时钟周期,其中确定最终冷却脉冲的长度TCPn 根据使用以下功能的扫描速度v,在v v0,TCPn / T = f1,n(v)v v0,TCPn / T = f2,n(v)中,其中,f1,n(v) f2,n(v)各自表示扫描速度v的连续函数,满足异常标记的存在率为1.0×10 -4以下,v0为可选择扫描速度的条件。
摘要:
A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2≧R3=R4≈0.
摘要:
A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
摘要:
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x
摘要翻译:一种p型氧化物,其为无定形并由以下组成式表示:xAO.yCu2O其中x表示AO的摩尔比例,y表示Cu2O的摩尔比,x和y满足以下表达式:0 @ x <100和x + y = 100,A是Mg,Ca,Sr和Ba中的任一种,或含有选自Mg,Ca,Sr和Ba中的至少一种的混合物。
摘要:
An optical recording medium contains a recording layer being composed of a phase-change recording material where at least four elements, Ga, Sb, Sn and Ge are contained and the transfer linear velocity is 20 m/s to 30 m/s, and when the wavelength of a recording/reproducing light is within the range of 650 nm to 665 nm and the recording linear velocity is 20 m/s to 28 m/s, the refractive index Nc and the extinction coefficient Kc in a crystalline state and the refractive index Na and the extinction coefficient Ka in an amorphous state in the recording layer respectively satisfy the following numerical expressions: 2.0≦Nc≦3.0, 4.0≦Kc≦5.0, 4.0≦Na≦5.0, and 2.5≦Ka≦3.1, and information is recordable at the range of 20 m/s to 28 m/s of recording linear velocity.