公开(公告)号：US20140352611A1

公开(公告)日：2014-12-04

申请号：US14287593

申请日：2014-05-27

Applicant: Tokyo Electron Limited

Inventor： Tetsuya MAKI ,  Hayato TANOUE

IPC: B05B15/02

CPC classification number: B05B15/55 ,  B05B15/52 ,  B05B15/531 ,  B05C5/0254 ,  B08B1/02 ,  B08B3/022 ,  B08B3/04 ,  G03F7/16 ,  H01L21/6715

Abstract: Provided is a coating apparatus which includes: a slit nozzle provided with a discharge port at a lower side of the slit nozzle, and configured to discharge a coating liquid from the discharge port; a moving mechanism configured to move the slit nozzle relative to a substrate; a sealing unit formed to extend along a longitudinal direction of the discharge port, and including a top surface which is brought into contact with the discharge port to seal the discharge port; a solvent reservoir configured to retain a solvent; and an immersing mechanism configured to immerse the sealing unit into the solvent retained in the solvent reservoir.

Abstract translation: 本发明提供一种涂布装置，其特征在于，包括：狭缝喷嘴，其在所述狭缝喷嘴的下侧设置有排出口，并且从所述排出口排出涂布液; 移动机构，其构造成相对于基板移动所述狭缝喷嘴; 密封单元，其形成为沿着排出口的长度方向延伸，并且包括与排出口接触以密封排出口的顶面; 配置成保留溶剂的溶剂储存器; 以及浸渍机构，其被配置为将所述密封单元浸入保留在所述溶剂容器中的溶剂中。

公开(公告)号：US20240404852A1

公开(公告)日：2024-12-05

申请号：US18697028

申请日：2022-09-16

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE ,  Gousuke SHIRAISHI

IPC: H01L21/67 ,  B23K26/36 ,  H01L21/02 ,  H01L21/66 ,  H01L21/68

Abstract: A processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removal target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate at the peripheral portion is reduced; forming a reference modification layer, which serves as a determination reference of a formation position of either the peripheral modification layer or the non-bonding region, at a non-bonding surface of the first substrate not bonded to the second substrate; and removing the peripheral portion starting from the peripheral modification layer.

公开(公告)号：US20240367266A1

公开(公告)日：2024-11-07

申请号：US18775234

申请日：2024-07-17

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Hirotoshi MORI

IPC: B23K26/53 ,  B23K26/062 ,  H01L21/304 ,  H01L21/67

Abstract: A processing apparatus includes a controller configured to control an operation of forming condensing points in a processing target object. In forming the condensing points by radiating a laser light to an inside of the processing target object periodically from a modifying device while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and, also, by moving the modifying device in a diametrical direction relative to the holder by a moving mechanism, the controller controls a number and an arrangement of the condensing points, which are simultaneously formed at different positions in a plane direction of the processing target object, based on a relative rotation number of the processing target object and a radiation pitch of the laser light.

公开(公告)号：US20240162081A1

公开(公告)日：2024-05-16

申请号：US18549616

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Hayato TANOUE

IPC: H01L21/762 ,  B23K26/53 ,  B23K101/40 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L21/76256 ,  B23K26/53 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/268 ,  B23K2101/40

Abstract: A stacked substrate manufacturing method includes (A) to (D) described below. (A) forming a bonding layer, which includes an oxide layer, on a surface of a first semiconductor substrate. (B) bringing the oxide layer of the bonding layer into contact with a second semiconductor substrate, and bonding the first semiconductor substrate and the second semiconductor substrate with the bonding layer therebetween. (C) forming, after the bonding of the first semiconductor substrate and the second semiconductor substrate, a modification layer with a laser beam on a first division plane along which the first semiconductor substrate is to be divided in a thickness direction thereof. (D) thinning the first semiconductor substrate bonded to the second semiconductor substrate with the bonding layer therebetween by dividing the first semiconductor substrate starting from the modification layer formed at the first division plane.

公开(公告)号：US20240087900A1

公开(公告)日：2024-03-14

申请号：US17907217

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/447 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01L21/447 ,  H01L21/67115 ,  H01L21/67144

Abstract: A processing method of a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A laser absorption layer is formed on the second substrate. The substrate processing method includes forming a separation modification layer by radiating a laser beam to the laser absorption layer in a pulse shape to accumulate a stress in the laser absorption layer; and separating the second substrate by releasing the accumulated stress in a chain manner.

公开(公告)号：US20230178374A1

公开(公告)日：2023-06-08

申请号：US17995171

申请日：2021-01-18

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: H01L21/268 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01L21/67092

Abstract: A substrate processing method of a combined substrate in which a first substrate having a surface film stacked thereon and a second substrate are bonded to each other includes separating the first substrate as a removing target from the second substrate; and removing or modifying at least a surface layer of the surface film at a peripheral portion of the second substrate by radiating laser light to an exposed surface of the surface film remaining at the peripheral portion of the second substrate, the exposed surface being exposed as a result of the separating of the first substrate.

公开(公告)号：US20220406603A1

公开(公告)日：2022-12-22

申请号：US17772166

申请日：2020-09-03

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/321 ,  H01L21/67 ,  H01L21/677

Abstract: A manufacturing method of a chip-attached substrate includes preparing a stacked substrate including multiple chips, a first substrate to which the multiple chips are temporarily bonded, and a second substrate bonded to the first substrate with the multiple chips therebetween; and separating the multiple chips bonded to the first substrate and the second substrate from the first substrate to bond the multiple chips to one surface of a third substrate including a device layer.

公开(公告)号：US20220375755A1

公开(公告)日：2022-11-24

申请号：US17817661

申请日：2022-08-05

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE

IPC: H01L21/304

Abstract: A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.

公开(公告)号：US20210327772A1

公开(公告)日：2021-10-21

申请号：US17049068

申请日：2019-04-15

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311

Abstract: A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.

公开(公告)号：US20210296119A1

公开(公告)日：2021-09-23

申请号：US17259244

申请日：2019-07-18

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Takashi UNO ,  Satoshi OOKAWA ,  Suguru ENOKIDA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/762 ,  B23K26/26

Abstract: A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.