公开(公告)号：US07102427B2

公开(公告)日：2006-09-05

申请号：US10922146

申请日：2004-08-20

申请人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

发明人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

IPC分类号： H03F3/38 ,  H03G3/20

CPC分类号： H03F1/0227 ,  H03F2200/432

摘要： An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC—DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC—DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.

摘要翻译： 提供了一种使用宽带，高效率和低失真放大器的放大器，无限幅失真，以及高效率和低失真射频功率放大器，使用该放大器，可应用于宽带无线通信系统。 放大器具有DC-DC转换器2，增强了低通滤波器4，用于放大来自端子5的输入信号的低频分量，以及增加了高通滤波器的B类放大器，用于放大输入 信号并在放大后提供其高频分量。 DC-DC转换器和B类放大器并联，B类放大器的电源电压由输入信号的低频分量控制。

公开(公告)号：US20060138458A1

公开(公告)日：2006-06-29

申请号：US11316908

申请日：2005-12-27

申请人： Kenichi Tanaka ,  Tomonori Tanoue ,  Hidetoshi Matsumoto ,  Hiroshi Ohta ,  Kazuhiro Mochizuki ,  Hiroyuki Uchiyama

发明人： Kenichi Tanaka ,  Tomonori Tanoue ,  Hidetoshi Matsumoto ,  Hiroshi Ohta ,  Kazuhiro Mochizuki ,  Hiroyuki Uchiyama

IPC分类号： H01L31/109

CPC分类号： H01L29/7371 ,  H01L29/66318

摘要： This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

摘要翻译： 本发明旨在提供一种如果HBT是集电极HBT，则可以实现直接位于外部基极层下方的发射极层的收缩，以及基极 - 发射极结能量的降低，或HBT为 发射极HBT，基极 - 集电极结电容降低。 对于收集器HBT，围绕集电极侧壁的窗口结构用于蚀刻直接位于外部基极层下方的发射极层或发射极接触层。对于发射极上升HBT，围绕侧壁的窗口结构 发射极用于蚀刻直接位于外部基底层下方的集电极层或集电极接触层。 在两个HBT中，外部基层由柱状结构支撑以确保机械强度。

公开(公告)号：US07045877B2

公开(公告)日：2006-05-16

申请号：US10420740

申请日：2003-04-23

申请人： Yasunari Umemoto ,  Hideyuki Ono ,  Tomonori Tanoue ,  Yasuo Ohsone ,  Isao Ohbu ,  Chushiro Kusano ,  Atsushi Kurokawa ,  Masao Yamane

发明人： Yasunari Umemoto ,  Hideyuki Ono ,  Tomonori Tanoue ,  Yasuo Ohsone ,  Isao Ohbu ,  Chushiro Kusano ,  Atsushi Kurokawa ,  Masao Yamane

IPC分类号： H01L31/072

CPC分类号： H01L27/0825 ,  H01L27/0259 ,  H01L29/7371 ,  H01L2224/48091 ,  H01L2224/73265 ,  H03K17/08146 ,  H03K17/615 ,  H01L2924/00014

摘要： The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.

摘要翻译： 本发明旨在提高对半导体器件的破坏性。 具有连接在高输出的放大电路的输出（集电极和发射极）之间的达林顿的多个双极晶体管的保护电路与放大电路并联电连接。 放大电路具有彼此并联连接的多个单元HBT（异质结双极晶体管）。 保护电路具有包括具有多个双极型晶体管Q 1至Q 5的第一组保护电路和具有多个双极晶体管的第二组保护电路的两级配置。

公开(公告)号：US07015761B2

公开(公告)日：2006-03-21

申请号：US10975431

申请日：2004-10-29

申请人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

发明人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

IPC分类号： H03F3/68 ,  H03G3/20

CPC分类号： H03F1/56 ,  H03F1/0222 ,  H03F1/0261 ,  H03F1/0266 ,  H03F1/301 ,  H03F1/302 ,  H03F1/306 ,  H03F3/19 ,  H03F3/1935 ,  H03F2200/318 ,  H03F2200/453

摘要： A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.

摘要翻译： 提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。 直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。 功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。 提供给DC电流放大器的输入信号响应于输入功率电平而改变。

公开(公告)号：US20050110573A1

公开(公告)日：2005-05-26

申请号：US11023414

申请日：2004-12-29

申请人： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

发明人： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

IPC分类号： H03F3/60 ,  H03F1/02 ,  H03F1/56 ,  H03F3/189 ,  H03F3/24 ,  H03F3/68

CPC分类号： H03F1/56 ,  H03F1/0277 ,  H03F1/565 ,  H03F3/602 ,  H03F3/72 ,  H03F2203/7209

摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

摘要翻译： 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M12和第一级匹配网络M13连接到通过切换操作的功率放大器单元A11和功率放大器单元A12的各个输出节点，连接第一级匹配网络M12的输出节点 M13并联连接M12和M13的连接点与输出端子OUT之间的最后一级匹配网络M11，形成第一级匹配网络M12，M13和最后级匹配网络M11，用于功率放大器 单元A11和A12，使得当一个单元在操作中另一个处于停止操作时，在操作中在输出端子OUT和功率放大器单元之间建立阻抗匹配。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。

公开(公告)号：US20050040497A1

公开(公告)日：2005-02-24

申请号：US10878358

申请日：2004-06-29

申请人： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

发明人： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

IPC分类号： H01L21/331 ,  H01L21/306 ,  H01L29/04 ,  H01L29/06 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L21/30612 ,  H01L29/045 ,  H01L29/0657

摘要： The technical subject of the invention is to inhibit disconnection of electrodes caused by a step and bursting caused by residual air. That is, an object of the present invention is to provide a semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. According to the invention, a hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. Accordingly, the present invention uses a novel wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate.

摘要翻译： 本发明的技术课题是抑制由残留空气引起的台阶和破裂引起的电极断开。 也就是说，本发明的目的是提供一种半导体器件，其能够克服存在于闪锌矿型化合物半导体衬底中的凹部的形状的缺陷，其中底部的面积大于其中的表面 横截面形状及其制造方法。 根据本发明，构成半导体器件的半导体衬底中存在的孔或台阶形成为正常的台面形状，而与半导体衬底的表面上的晶体取向无关。 因此，本发明使用对蚀刻掩模下方的蚀刻速度高于半导体衬底的深度方向的蚀刻速率的新型湿式蚀刻溶液。

公开(公告)号：US4553317A

公开(公告)日：1985-11-19

申请号：US437627

申请日：1982-10-29

申请人： Hiroyuki Sakaki ,  Tomonori Tanoue ,  Hidetoshi Nojiri

发明人： Hiroyuki Sakaki ,  Tomonori Tanoue ,  Hidetoshi Nojiri

IPC分类号： H01L29/205 ,  H01L29/864 ,  H01L29/868 ,  H01L31/107 ,  H01L31/18 ,  H01L21/20

CPC分类号： H01L31/1844 ,  H01L29/205 ,  H01L29/864 ,  H01L29/868 ,  H01L31/1075 ,  H01L31/18 ,  H01L31/184 ,  Y02E10/544 ,  Y10S438/936

摘要： In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition:X.sub.A

摘要翻译： 在使用诸如光接收元件或微波振荡元件的雪崩倍数的半导体元件中，满足以下条件的半导体A和半导体B：XA

公开(公告)号：US08396430B2

公开(公告)日：2013-03-12

申请号：US13114340

申请日：2011-05-24

申请人： Taizo Yamawaki ,  Tomonori Tanoue ,  Kazuaki Hori

发明人： Taizo Yamawaki ,  Tomonori Tanoue ,  Kazuaki Hori

IPC分类号： H04B1/44

CPC分类号： H04B1/006 ,  H04B1/52

摘要： Disclosed are a semiconductor integrated circuit device and a wireless communication system that are capable of improving reception sensitivity. The wireless communication system includes, for instance, a first duplexer, a second duplexer, a first low-noise amplifier circuit, and a second low-noise amplifier circuit. A transmission band compliant with a communication standard is split into two segments for use, namely, low- and high-frequency transmission bands. A reception band compliant with the communication standard is split into two segments for use, namely, low- and high-frequency reception bands. The first duplexer uses the low-frequency transmission band and low-frequency reception band as passbands. The second duplexer uses the high-frequency transmission band and high-frequency reception band as passbands. A signal received from the first duplexer and a signal received from the second duplexer are respectively amplified by the first and the second low-noise amplifier circuits, which are respectively provided to handle such signals.

摘要翻译： 公开了能够提高接收灵敏度的半导体集成电路装置和无线通信系统。 无线通信系统包括例如第一双工器，第二双工器，第一低噪声放大器电路和第二低噪声放大器电路。 符合通信​​标准的传输频带被分成两个段，即低频和高频传输频带。 符合通信​​标准的接收频段被分为两段供低频和高频接收频段使用。 第一双工器使用低频传输频带和低频接收频带作为通带。 第二双工器使用高频传输频带和高频接收频带作为通带。 从第一双工器接收的信号和从第二双工器接收的信号分别由分别提供以处理这种信号的第一和第二低噪声放大器电路放大。

公开(公告)号：US07876156B2

公开(公告)日：2011-01-25

申请号：US12412728

申请日：2009-03-27

申请人： Satoshi Tanaka ,  Tomonori Tanoue

发明人： Satoshi Tanaka ,  Tomonori Tanoue

IPC分类号： H03G3/30

CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F3/245 ,  H03F2200/393 ,  H03F2200/451

摘要： An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

摘要翻译： RF功率放大器具有产生RF发射输出信号的最终级放大器级，检测RF发射输出电平的信号检测器，第一检测器，第二检测器和控制电路。 最后一级放大器级包括晶体管和负载元件，并执行饱和型非线性放大和非饱和型线性放大。 第一检测器和控制电路保持RF发射输出信号相对于饱和型非线性放大在天线处的负载变化大致恒定。 第二检测器和控制电路在非饱和型线性放大时相对于天线的过载状态减小了最终级晶体管的输出电压的增加。

公开(公告)号：US07248118B2

公开(公告)日：2007-07-24

申请号：US10830049

申请日：2004-04-23

申请人： Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

发明人： Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC分类号： H03G3/10

CPC分类号： H03F1/30 ,  H01L2224/73265 ,  H03F1/02 ,  H03F3/195

摘要： A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding pad 106 having a capacitance component to a ground and stitch structure inductances 108, 109 composed of a bonding wire 105 provided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.

摘要翻译： 针对连接偏置控制部分和射频功率放大器部分而不增加模块基板面积的偏置电源线中的射频信号的充分衰减的射频功率放大器模块。 至少一个具有接地电容分量的接合焊盘106和由经由接合焊盘提供的接合线105组成的针脚结构电感108,109设置在偏置电源线中，该偏置电源线连接偏置控制部分和射频功率放大器部分 。