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71 条记录 (耗时 0.037 秒)

    Pattern forming method and semiconductor device manufacturing method
    24.
    发明授权
    Pattern forming method and semiconductor device manufacturing method 有权
    图案形成方法和半导体器件制造方法

    公开(公告)号：US08119530B2

    公开(公告)日：2012-02-21

    申请号：US12521184

    申请日：2007-12-20

    申请人： Masaru Hori ,  Yoshiro Kabe ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    发明人： Masaru Hori ,  Yoshiro Kabe ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/66818

    摘要： A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.

    摘要翻译： 图案形成方法包括制备包括硅的目标物体，其中形成有初始图案并具有第一线宽度; 在等离子体处理装置的处理室内的硅表面上进行等离子体氧化处理，由此在初始图案的表面上形成氧化硅膜; 并除去氧化硅膜。 图案形成方法被配置为反复进行氧化硅膜的形成和氧化硅膜的去除，以形成目标物体上具有比第一线宽窄的第二线宽的物镜图案。

    Plasma oxidation processing method
    25.
    发明授权
    Plasma oxidation processing method 有权
    等离子体氧化处理方法

    公开(公告)号：US07989364B2

    公开(公告)日：2011-08-02

    申请号：US12439019

    申请日：2007-08-27

    申请人： Masaru Hori ,  Toshihiko Shiozawa ,  Yoshiro Kabe ,  Junichi Kitagawa

    发明人： Masaru Hori ,  Toshihiko Shiozawa ,  Yoshiro Kabe ,  Junichi Kitagawa

    IPC分类号： H01L21/469

    CPC分类号： H01L21/31662 ,  C23C8/10 ,  C23C8/36 ,  H01L21/02238 ,  H01L21/02252 ,  H01L22/20

    摘要： A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.

    摘要翻译： 进行等离子体氧化处理，通过使用从含有氧气的工艺气体产生的O（1D2）自由基密度为1×10 12 [cm -3]以上的等离子体，在目标物体的表面上形成氧化硅膜 等离子体处理装置的处理室。 在等离子体氧化过程中，通过VUV单色仪63测量等离子体中的O（1D2）自由基密度，并对等离子体处理条件进行校正。

    Multi Micro-Hollow Cathode Light Source and Multi-Atomic Simulataneous Absorption Spectrum Analyzer
    26.
    发明申请
    Multi Micro-Hollow Cathode Light Source and Multi-Atomic Simulataneous Absorption Spectrum Analyzer 审中-公开
    多微空心阴极光源和多原子模拟吸收光谱分析仪

    公开(公告)号：US20090310134A1

    公开(公告)日：2009-12-17

    申请号：US12225385

    申请日：2006-11-02

    申请人： Masaru Hori ,  Masafumi Ito ,  Takayuki Ohta ,  Hiroyuki Kano

    发明人： Masaru Hori ,  Masafumi Ito ,  Takayuki Ohta ,  Hiroyuki Kano

    IPC分类号： H01J61/09 ,  G01J3/28

    CPC分类号： G01N21/67 ,  G01J3/10 ,  H01J61/09 ,  H01J61/16 ,  H01J61/64

    摘要： [Object] To achieve a compact point light source exhibiting multielement emission spectra with which multi elements can be simultaneously analyzed.[Solving Means] The light source includes a glass vessel 40 containing He gas; a plurality of micro hollow pipes 11 that are cylindrical with a diameter of 1 mm or less and made of copper or a copper alloy; an anode mesh 32 provided at ends of the micro hollow pipes 11 with an insulating spacer 33 between the anode mesh 32 and the ends; a metal wire 14 provided in the micro hollow pipe 11, the metal wire being made of an element corresponding to a desired light-source spectrum.

    摘要翻译： 实现能够同时分析多元素的多元素发射光谱的小型点光源。 [解决方案]光源包括含有He气体的玻璃容器40; 多个微细中空管11，其为直径为1mm以下的圆筒形，由铜或铜合金制成; 阳极网32设置在微型中空管11的端部处，绝缘间隔件33位于阳极网32和端部之间; 设置在微型中空管11中的金属线14，金属线由对应于期望的光源光谱的元件制成。

    Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
    27.
    发明申请
    Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium 有权
    修复具有低介电常数的损伤膜的方法，半导体器件制造系统和存储介质

    公开(公告)号：US20070232076A1

    公开(公告)日：2007-10-04

    申请号：US11727392

    申请日：2007-03-26

    申请人： Masaru Hori ,  Kazuhiro Kubota

    发明人： Masaru Hori ,  Kazuhiro Kubota

    IPC分类号： H01L21/31

    CPC分类号： H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76814

    摘要： A damaged layer repairing method repairs a damaged layer formed in a surface of a SiOCH film having a low dielectric constant film, containing silicon, carbon, oxygen and hydrogen and formed on a substrate through the elimination of carbon atoms by the decarbonizing effect of plasmas used in an etching process and an ashing process. CH3 radicals are produced through the thermal decomposition of C8H18O2 gas represented by a structural formula: (CH3)3COOH(CH3)3. CH3 radicals are brought into contact with the damaged layer in the SiOCH film and are made to bond to the damaged layer to repair the damaged layer.

    摘要翻译： 损坏的层修复方法修复形成在具有低介电常数膜的SiOCH膜的表面中的损伤层，其含有硅，碳，氧和氢，并且通过使用等离子体的脱碳效应通过消除碳原子形成在基板上 在蚀刻过程和灰化过程中。 CH 3 3自由基通过由结构式表示的C 8-18 H 2 O 2 O 2 H 2气的热分解产生， （CH 3 3）3 COOH（CH 3 3）3。 CH 3 3个基团与SiOCH膜中的损伤层接触并制成粘合到损伤层以修复受损层。

    Method for producing carbon nanowalls, carbon nanowall, and apparatus for producing carbon nanowalls
    28.
    发明申请
    Method for producing carbon nanowalls, carbon nanowall, and apparatus for producing carbon nanowalls 审中-公开
    碳纳米管的制造方法，碳纳米壁，以及碳纳米管的制造装置

    公开(公告)号：US20070184190A1

    公开(公告)日：2007-08-09

    申请号：US10569838

    申请日：2004-08-27

    申请人： Mineo Hiramatsu ,  Masaru Hori

    发明人： Mineo Hiramatsu ,  Masaru Hori

    IPC分类号： C23C16/00

    CPC分类号： B82Y30/00 ,  B01J19/088 ,  B01J2219/00186 ,  B01J2219/0809 ,  B01J2219/0835 ,  B01J2219/0871 ,  B01J2219/0892 ,  B01J2219/0894 ,  B82Y40/00 ,  C01B32/18

    摘要： To provide a novel method for producing carbon nanowalls and an apparatus suitable for carrying out the method. A source gas 32 containing carbon is introduced into a reaction chamber 10. The reaction chamber 10 includes a parallel plate-type capacitively coupled plasma (CCP) generator 20 including a first electrode 22 and a second electrode 24. The irradiation of electromagnetic waves plasmatizes the source material 32 to create a plasma atmosphere 34. In a radical-generating chamber 41 disposed outside the reaction chamber 10, hydrogen radicals 38 are generated by decomposing radical source gas 36 containing hydrogen using RF waves or other waves. The hydrogen radicals 38 are introduced into the plasma atmosphere 34, whereby carbon nanowalls are formed on a substrate 5 disposed on the second electrode 24.

    摘要翻译： 提供一种生产碳纳米壁的新方法和适用于实施该方法的装置。 含有碳的源气体32被引入到反应室10中。 反应室10包括平行板式电容耦合等离子体（CCP）发生器20，其包括第一电极22和第二电极24。 电磁波的照射等离子体化源材料32以产生等离子体气氛34。 在设置在反应室10外部的自由基产生室41中，通过使用RF波或其它波分解含有氢的自由基源气体36来产生氢自由基38。 将氢自由基38引入等离子体气氛34中，由此在设置在第二电极24上的基板5上形成碳纳米壁。

    Method for producing graphene
    29.
    发明授权
    Method for producing graphene 有权
    生产石墨烯的方法

    公开(公告)号：US08349142B2

    公开(公告)日：2013-01-08

    申请号：US12736268

    申请日：2009-03-23

    申请人： Masaru Hori ,  Hiroyuki Kano

    发明人： Masaru Hori ,  Hiroyuki Kano

    IPC分类号： B01J19/08

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/184

    摘要： A graphene production apparatus 100 has a vessel 10 and, attached thereto, an immersion electrode 20 and a non-immersion electrode 30. The immersion electrode has an electrode covering 20c and an electrode main body 20e, and the non-immersion electrode has a covering 30c and an electrode main body 30e. An argon-feeding conduit 40 is disposed so as to inject argon into the vessel 10 around the electrode main body 30e. Ethanol is supplied in such an amount that the liquid surface completely covers the electrode main body 20e of the immersion electrode 20 and does not reach the electrode main body 30e of the non-immersion electrode 30. The electrode main body 20e is formed from, for example, iron, nickel, or cobalt.

    摘要翻译： 石墨烯制造装置100具有容器10，并附接有浸渍电极20和非浸没电极30.浸渍电极具有电极覆盖层20c和电极主体20e，非浸渍电极具有覆盖层 30c和电极主体30e。 氩供给导管40设置成在电极主体30e的周围向容器10内注入氩。 乙醇的供给量使得液面完全覆盖浸没电极20的电极主体20e，并且不会到达非浸没电极30的电极主体30e。电极主体20e由 例如，铁，镍或钴。