公开(公告)号：US20100099241A1

公开(公告)日：2010-04-22

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko MURANO ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在所述Si基基板的所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。

公开(公告)号：US20080044983A1

公开(公告)日：2008-02-21

申请号：US11907354

申请日：2007-10-11

申请人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

发明人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

IPC分类号： H01L21/30

CPC分类号： H01L21/84 ,  H01L21/76251 ,  H01L27/10829 ,  H01L27/10894 ,  H01L27/1203 ,  Y10S438/977

摘要： A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.

摘要翻译： 在主表面上具有热氧化膜的支撑侧基板在主表面上具有热氧化膜的有源层侧基板上接合，同时使主表面彼此相对。 有源层侧基板和氧化膜的一部分从与有源层侧基板的主表面相反的表面选择性地蚀刻到由热氧化膜形成的掩埋氧化膜的中间深度 一部分。 在有源层侧基板的蚀刻侧面部形成有侧壁绝缘膜。 然后，选择性地蚀刻除有源层侧基板之下的剩余的掩埋氧化膜。 通过去除掩埋氧化膜而暴露的支撑侧基板上形成单晶半导体层。

公开(公告)号：US20070176237A1

公开(公告)日：2007-08-02

申请号：US11717068

申请日：2007-03-13

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

公开(公告)号：US07145215B2

公开(公告)日：2006-12-05

申请号：US11315796

申请日：2005-12-22

申请人： Kazumi Inoh ,  Hidemi Ishiuchi ,  Satoshi Matsuda ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Kazumi Inoh ,  Hidemi Ishiuchi ,  Satoshi Matsuda ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L29/00

CPC分类号： H01L27/10894 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/0218 ,  H01L27/105 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10885 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/7841

摘要： A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

摘要翻译： 半导体器件包括半导体衬底，腔体和元件隔离区域。 在半导体衬底中制造各自形状为平板的空腔。 元件隔离区域形成在半导体衬底的表面并且位于空腔的侧面。

公开(公告)号：US07071039B2

公开(公告)日：2006-07-04

申请号：US10360741

申请日：2003-02-10

申请人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Osamu Fujii

发明人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Osamu Fujii

IPC分类号： H01L21/00

CPC分类号： H01L21/76264 ,  H01L21/76278 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/10894 ,  H01L27/1203

摘要： A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench.

公开(公告)号：US06979846B2

公开(公告)日：2005-12-27

申请号：US10436181

申请日：2003-05-13

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

公开(公告)号：US06893928B2

公开(公告)日：2005-05-17

申请号：US10390046

申请日：2003-03-18

申请人： Tsutomu Sato ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Toshihiko Iinuma ,  Kiyotaka Miyano

发明人： Tsutomu Sato ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Toshihiko Iinuma ,  Kiyotaka Miyano

IPC分类号： H01L29/78 ,  H01L21/324 ,  H01L21/336 ,  H01L21/762 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/66583 ,  H01L21/324 ,  H01L21/76229 ,  H01L21/76232 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7831 ,  H01L29/78639

摘要： To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.

摘要翻译： 在硅衬底的位于MOS晶体管的沟道区之下的部分提供空腔。

公开(公告)号：US06835981B2

公开(公告)日：2004-12-28

申请号：US09995594

申请日：2001-11-29

申请人： Takashi Yamada ,  Hajime Nagano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Hisato Oyamatsu ,  Shinichi Nitta

发明人： Takashi Yamada ,  Hajime Nagano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Hisato Oyamatsu ,  Shinichi Nitta

IPC分类号： H01L2701

CPC分类号： H01L27/10894 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/10832 ,  H01L27/10861 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.

摘要翻译： 半导体芯片包括基底基板，在基底基板的一部分上具有体积生长层的体器件区域，在基底基板上具有掩埋绝缘体的SOI器件区域和埋入绝缘体上的硅层，以及边界层 位于体器件区域和SOI器件区域之间的边界处。 本体装置区域具有第一装置制造表面，其中大块装置位于本体生长层上。 SOI器件区域具有第二器件制造表面，其中SOI器件位于硅层上。 第一和第二装置制造表面被定位在基本均匀的水平。

公开(公告)号：US06552380B1

公开(公告)日：2003-04-22

申请号：US09531537

申请日：2000-03-20

申请人： Tsutomu Sato ,  Ichiro Mizushima ,  Yoshitaka Tsunashima

发明人： Tsutomu Sato ,  Ichiro Mizushima ,  Yoshitaka Tsunashima

IPC分类号： H01L31119

CPC分类号： H01L21/30604 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/66181

摘要： A deep trench is formed in a silicon substrate. The inner surface of the trench is next coated with a thin polycrystalline silicon film (liner film) so as not to close the trench. A silicon germanium film (node electrode) is then formed on the thin polycrystalline silicon film so as not to close the trench. Next, a heat treatment is performed on the silicon germanium film thereby to flow only the silicon germanium so that the trench is filled.

公开(公告)号：US6100132A

公开(公告)日：2000-08-08

申请号：US106082

申请日：1998-06-29

申请人： Tsutomu Sato ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Junichiro Iba

发明人： Tsutomu Sato ,  Ichiro Mizushima ,  Yoshitaka Tsunashima ,  Junichiro Iba

IPC分类号： H01L21/02 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/84 ,  Y10S438/909

摘要： A semiconductor device includes a semiconductor substrate having a trench on a surface thereof and an embedding member embedding the interior of the trench therewith. While the section of the trench when cut by a first plane perpendicular to the direction of the depth of the trench is defined as a first section and the section of the trench when cut by a second plane perpendicular to the direction of the depth of the trench and closer to the bottom of the trench than the first plane is defined as a second section, the area of the first section is smaller than that of the second section and a minimum radius of curvature of the first section is smaller than a minimum radius of curvature of the second section. As a result, it is possible to lessen the concentration of the electric field into the bottom of the trench.

摘要翻译： 半导体器件包括在其表面上具有沟槽的半导体衬底和嵌入沟槽内部的嵌入构件。 虽然当垂直于沟槽深度方向的第一平面切割沟槽的部分被定义为第一部分，并且当垂直于沟槽深度方向的第二平面切割沟槽的部分时 并且比所述第一平面更靠近所述沟槽的底部被限定为第二部分，所述第一部分的面积小于所述第二部分的面积，并且所述第一部分的最小曲率半径小于所述第一部分的最小半径 第二部分的曲率。 结果，可以减小进入沟槽底部的电场的浓度。