公开(公告)号：US09748147B1

公开(公告)日：2017-08-29

申请号：US15214467

申请日：2016-07-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Li-Wei Feng ,  Li-Chieh Hsu ,  Chun-Jen Chen ,  I-Cheng Hu ,  Tien-I Wu ,  Yu-Shu Lin ,  Neng-Hui Yang

IPC: H01L21/20 ,  H01L21/8238 ,  H01L21/265 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/823821 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02661 ,  H01L21/2652 ,  H01L21/3086 ,  H01L21/823807 ,  H01L21/8258

Abstract: A method of fabricating an epitaxial layer includes providing a silicon substrate. A dielectric layer covers the silicon substrate. A recess is formed in the silicon substrate and the dielectric layer. A selective epitaxial growth process and a non-selective epitaxial growth process are performed in sequence to respectively form a first epitaxial layer and a second epitaxial layer. The first epitaxial layer does not cover the top surface of the dielectric layer. The recess is filled by the first epitaxial layer and the second epitaxial layer. Finally, the first epitaxial layer and the second epitaxial layer are planarized.

公开(公告)号：US09570578B2

公开(公告)日：2017-02-14

申请号：US14619085

申请日：2015-02-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Keng-Jen Lin ,  Chien-Liang Lin ,  Yu-Ren Wang ,  Neng-Hui Yang

IPC: H01L29/66 ,  H01L21/285 ,  H01L21/28 ,  H01L29/49 ,  H01L21/322 ,  H01L29/51

CPC classification number: H01L29/66545 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/3221 ,  H01L29/4966 ,  H01L29/517

Abstract: A gate forming process includes the following steps. A gate dielectric layer is formed on a substrate. A barrier layer is formed on the gate dielectric layer. A silicon seed layer and a silicon layer are sequentially and directly formed on the barrier layer, wherein the silicon seed layer and the silicon layer are formed by different precursors.

Abstract translation: 门形成工艺包括以下步骤。 在基板上形成栅极电介质层。 在栅介质层上形成阻挡层。 硅晶种层和硅层依次直接形成在阻挡层上，其中硅晶种层和硅层由不同的前体形成。

公开(公告)号：US09466480B2

公开(公告)日：2016-10-11

申请号：US14532015

申请日：2014-11-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ted Ming-Lang Guo ,  Chin-Cheng Chien ,  Chueh-Yang Liu ,  Neng-Hui Yang

IPC: H01L21/8242 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02334 ,  H01L21/0206 ,  H01L21/02181 ,  H01L21/02307 ,  H01L21/28211 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the substrate of the first area and the second area. An ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2) containing process is performed on the first oxide layer of the first area and the second area. A photoresist layer covers the first oxide layer of the first area while exposing the first oxide layer of the second area. The first oxide layer of the second area is removed. The photoresist layer is then removed.

Abstract translation: 氧化物的清洗方法包括以下步骤。 提供具有第一区域和第二区域的衬底。 在第一区域和第二区域的基板上形成第一氧化物层。 在第一区域和第二区域的第一氧化物层上进行含有氢氧化铵（NH 4 OH）和过氧化氢（H 2 O 2）的工艺。 光致抗蚀剂层覆盖第一区域的第一氧化物层，同时暴露第二区域的第一氧化物层。 去除第二区域的第一氧化物层。 然后除去光致抗蚀剂层。