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    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    22.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20210028352A1

    公开(公告)日：2021-01-28

    申请号：US17064614

    申请日：2020-10-07

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Wei Kuo ,  Meng-Jun Wang ,  Yi-Wei Tseng ,  Yu-Tsung Lai ,  Jiunn-Hsiung Liao

    IPC: H01L43/02 ,  H01L43/12

    Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming an etch stop layer on the first IMD layer; forming a second IMD layer on the etch stop layer; forming a patterned hard mask on the second IMD layer; performing a first etching process to form a contact hole in the second IMD layer for exposing the etch stop layer; performing a second etching process to remove the patterned hard mask; performing a third etching process to remove the etch stop layer and the first IMD layer for exposing the MTJ; and forming a metal interconnection in the contact hole.

    METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
    26.
    发明申请
    METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190096748A1

    公开(公告)日：2019-03-28

    申请号：US15712153

    申请日：2017-09-22

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Wei Kuo ,  Yu-Tsung Lai ,  Jiunn-Hsiung Liao

    IPC: H01L21/768

    Abstract: A method for fabricating a semiconductor device includes the steps of: providing a first dielectric layer having a metal layer therein; forming a second dielectric layer on the first dielectric layer and the metal layer; forming a metal oxide layer on the second dielectric layer; performing a first etching process by using a chlorine-based etchant to remove part of the metal oxide layer to forma via opening and expose the second dielectric layer; forming a block layer on sidewalls of the metal oxide layer and a top surface of the second dielectric layer; and performing a second etching process by using a fluorine-based etchant to remove part of the block layer and part of the second dielectric layer for exposing a top surface of the metal layer.

    Method for forming semiconductor structure having opening
    27.
    发明授权
    Method for forming semiconductor structure having opening 有权
    用于形成具有开口的半导体结构的方法

    公开(公告)号：US09230812B2

    公开(公告)日：2016-01-05

    申请号：US13899577

    申请日：2013-05-22

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chieh-Te Chen ,  Yu-Tsung Lai ,  Hsuan-Hsu Chen ,  Feng-Yi Chang

    IPC: H01L21/311 ,  H01L21/28 ,  H01L21/768 ,  H01L21/033

    CPC classification number: H01L21/28 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/76816

    Abstract: A method for forming a semiconductor structure having an opening is provided. First, a substrate is provided, wherein a first region and a second region are defined on the substrate and an overlapping area of the first region and the second region is defined as a third region. A pattern density of the first region is substantially greater than that of the second region. Then, a material layer is formed on the substrate. A first hard mask and a second hard mask are formed on the material layer. The first hard mask in the first region is removed to form a patterned first hard mask. The second hard mask in the third region is removed to form a patterned second hard mask. Lastly, the material layer is patterned by using the patterned second hard mask layer as a mask to form at least an opening in the third region only.

    Abstract translation: 提供一种形成具有开口的半导体结构的方法。 首先，提供衬底，其中在衬底上限定第一区域和第二区域，并且将第一区域和第二区域的重叠区域定义为第三区域。 第一区域的图案密度基本上大于第二区域的图案密度。 然后，在基板上形成材料层。 第一硬掩模和第二硬掩模形成在材料层上。 第一区域中的第一硬掩模被去除以形成图案化的第一硬掩模。 去除第三区域中的第二硬掩模以形成图案化的第二硬掩模。 最后，通过使用图案化的第二硬掩模层作为掩模来对材料层进行图案化，以仅在第三区域中形成至少一个开口。

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