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    STRUCTURE HAVING NANO-HOLE AND FABRICATING METHOD THEREOF, TIP ARRAY STRUCTURE AND FABRICATING METHOD OF TIP STRUCTURE
    22.
    发明申请
    STRUCTURE HAVING NANO-HOLE AND FABRICATING METHOD THEREOF, TIP ARRAY STRUCTURE AND FABRICATING METHOD OF TIP STRUCTURE 有权
    具有纳米孔的结构及其制造方法，尖端结构和制造方法的尖端结构

    公开(公告)号：US20080160285A1

    公开(公告)日：2008-07-03

    申请号：US11737768

    申请日：2007-04-20

    Applicant: Wei-Su Chen

    Inventor： Wei-Su Chen

    IPC: G21K1/00 ,  B32B3/26 ,  G03C5/00

    CPC classification number: G03F7/405 ,  B82Y15/00 ,  Y10S977/875 ,  Y10T428/249979

    Abstract: A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 mm, high aspect ratio, and a uniform diameter of tip-body.

    Abstract translation: 提供了具有纳米孔结构的制造方法。 制造方法包括：提供基板，在基板上形成光致抗蚀剂层，形成开口，并在光致抗蚀剂层上进行热处理工艺以收缩开口以形成纳米孔。 通过本发明的方法制造的具有纳米孔的结构可用于制造具有不超过10mm的尖端直径，高纵横比和尖端体直径均匀的纳米尖端。

    Phase change memory device and fabricating method therefor
    23.
    发明申请
    Phase change memory device and fabricating method therefor 失效
    相变存储器件及其制造方法

    公开(公告)号：US20070148855A1

    公开(公告)日：2007-06-28

    申请号：US11479497

    申请日：2006-06-30

    Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC: H01L21/8244 ,  H01L21/8238 ,  H01L21/00 ,  H01L21/20

    CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    Organic light emitting diode device with organic hole transporting material and phosphorescent material
    25.
    发明授权
    Organic light emitting diode device with organic hole transporting material and phosphorescent material 有权
    具有有机空穴传输材料和磷光材料的有机发光二极管器件

    公开(公告)号：US06822257B2

    公开(公告)日：2004-11-23

    申请号：US10248553

    申请日：2003-01-29

    Applicant: Yung-Chih Lee ,  Wei-Su Chen ,  Chi-Chih Liao ,  Jiun-Haw Lee

    Inventor： Yung-Chih Lee ,  Wei-Su Chen ,  Chi-Chih Liao ,  Jiun-Haw Lee

    IPC: H01L3524

    CPC classification number: H01L51/5016 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5096

    Abstract: An organic light emitting diode (OLED) device comprises a substrate, an anode layer, a luminescence layer, a hole blocking layer and a cathode layer. The anode layer is disposed on the substrate; the luminescence layer is disposed on the anode layer; the hole blocking layer is disposed on the luminescence layer; the cathode layer is disposed on the hole blocking layer. In addition the luminescence layer comprises a hole transporting material and a phosphorescent material, wherein the weight percentage of the bole transporting material and the phosphorescent material is between 40%˜60%.

    Abstract translation: 有机发光二极管（OLED）器件包括衬底，阳极层，发光层，空穴阻挡层和阴极层。 阳极层设置在基板上; 发光层设置在阳极层上; 空穴阻挡层设置在发光层上; 阴极层设置在空穴阻挡层上。 此外，发光层包括空穴传输材料和磷光材料，其中，所述布纹输送材料和磷光材料的重量百分比为40％〜60％。

    RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    26.
    发明申请
    RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    电阻记忆体装置及其制造方法

    公开(公告)号：US20130087757A1

    公开(公告)日：2013-04-11

    申请号：US13339342

    申请日：2011-12-28

    Applicant: Wei-Su Chen ,  Frederick T. Chen ,  Shan-Yi Yang ,  Peng-Sheng Chen

    Inventor： Wei-Su Chen ,  Frederick T. Chen ,  Shan-Yi Yang ,  Peng-Sheng Chen

    IPC: H01L45/00 ,  H01L21/62

    CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1691

    Abstract: A method of manufacturing a resistive memory device is provided. A bottom electrode and a cup-shaped electrode connected to the bottom electrode are formed in an insulating layer. A cover layer extends along a first direction is formed and covers a first area surrounded by the cup-shaped electrode and exposes a second area and a third area surrounded by the cup-shaped electrode. A sacrificial layer is formed above the insulating layer. A stacked layer extends along a second direction and covers the second area surrounded by the cup-shaped electrode and a portion of the corresponding cover layer is formed. A conductive spacer material layer is formed on the stacked layer and the sacrificial layer. By using the sacrificial layer as an etch stop layer, the conductive spacer material layer is etched to form a conductive spacer at the sidewall of the stacked layer.

    Abstract translation: 提供一种制造电阻式存储器件的方法。 连接到底部电极的底部电极和杯形电极形成在绝缘层中。 形成沿着第一方向延伸的覆盖层，并且覆盖由杯状电极包围的第一区域，并露出由杯状电极包围的第二区域和第三区域。 在绝缘层之上形成牺牲层。 堆叠层沿着第二方向延伸并且覆盖由杯形电极包围的第二区域，并且形成相应覆盖层的一部分。 导电间隔物层形成在堆叠层和牺牲层上。 通过使用牺牲层作为蚀刻停止层，蚀刻导电间隔物材料层，以在堆叠层的侧壁处形成导电间隔物。

    Resistance switching memory
    27.
    发明授权
    Resistance switching memory 有权
    电阻切换存储器

    公开(公告)号：US08198620B2

    公开(公告)日：2012-06-12

    申请号：US12636794

    申请日：2009-12-14

    Applicant: Frederick T. Chen ,  Ming-Jinn Tsai ,  Wei-Su Chen ,  Heng-Yuan Lee

    Inventor： Frederick T. Chen ,  Ming-Jinn Tsai ,  Wei-Su Chen ,  Heng-Yuan Lee

    IPC: H01L47/00 ,  H01L29/02 ,  H01L29/06

    CPC classification number: H01L45/08 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/124 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16

    Abstract: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.

    Abstract translation: 本文介绍了电阻切换存储器。 电阻切换存储器包括形成为覆盖图案化金属线的侧壁的高绝缘或电阻切换材料，并且沿着介电层侧壁延伸以进一步接触下电极的顶表面的一部分。 下电极的顶表面的另一部分被顶电极和下电极之间的绝缘层覆盖。 下电极中的吸氧金属层占据下电极顶表面的实质中心部分，并被高绝缘或电阻切换材料部分地覆盖。 开关区域自然非常好地局限在下电极的吸氧金属层的实质中心部分。

    RESISTANCE SWITCHING MEMORY
    29.
    发明申请
    RESISTANCE SWITCHING MEMORY 有权
    电阻开关存储器

    公开(公告)号：US20110140067A1

    公开(公告)日：2011-06-16

    申请号：US12636794

    申请日：2009-12-14

    Applicant: Frederick T. Chen ,  Ming-Jinn Tsai ,  Wei-Su Chen ,  Heng-Yuan Lee

    Inventor： Frederick T. Chen ,  Ming-Jinn Tsai ,  Wei-Su Chen ,  Heng-Yuan Lee

    IPC: H01L45/00 ,  H01L21/02

    CPC classification number: H01L45/08 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/124 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16

    Abstract: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part of the top surface of the lower electrode is covered by an insulating layer between the top electrode and the lower electrode. An oxygen gettering metal layer in the lower electrode occupies a substantial central part of the top surface of the lower electrode and is partially covered by the highly-insulating or resistance-switching material. A switching area is naturally very well confined to the substantial central part of the oxygen gettering metal layer of the lower electrode.

    Abstract translation: 本文介绍了电阻切换存储器。 电阻切换存储器包括形成为覆盖图案化金属线的侧壁的高绝缘或电阻切换材料，并且沿着介电层侧壁延伸以进一步接触下电极的顶表面的一部分。 下电极的顶表面的另一部分被顶电极和下电极之间的绝缘层覆盖。 下电极中的吸氧金属层占据下电极顶表面的实质中心部分，并被高绝缘或电阻切换材料部分地覆盖。 开关区域自然非常好地局限在下电极的吸氧金属层的实质中心部分。

    Tip array structure and fabricating method of tip structure
    30.
    发明授权
    Tip array structure and fabricating method of tip structure 有权
    尖端阵列结构及尖端结构的制作方法

    公开(公告)号：US07814566B2

    公开(公告)日：2010-10-12

    申请号：US11737768

    申请日：2007-04-20

    Applicant: Wei-Su Chen

    Inventor： Wei-Su Chen

    IPC: G01Q70/16

    CPC classification number: G03F7/405 ,  B82Y15/00 ,  Y10S977/875 ,  Y10T428/249979

    Abstract: A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 nm, high aspect ratio, and a uniform diameter of tip-body.

    Abstract translation: 提供了具有纳米孔结构的制造方法。 制造方法包括：提供基板，在基板上形成光致抗蚀剂层，形成开口，并在光致抗蚀剂层上进行热处理工艺以收缩开口以形成纳米孔。 通过本发明的方法制造的具有纳米孔的结构可以用于制造尖端体直径不大于10nm，高纵横比和尖端体直径均匀的纳米尖端。

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