摘要:
A compound represented by the formula (1) or a salt thereof ( represents a single bond, or a double bond; R1 represents hydrogen atom, or an alkyl group; R2 and R3 represent hydrogen atom, or an alkyl group; R4 and R5 represent hydrogen atom, hydroxy group, an alkoxyl group, a halogen atom, or a mono- or di-alkyl-substituted amino group; R6 represents hydrogen atom, cyano group, an alkoxycarbonyl group, or carboxy group; R7 represents one or two of substituents on the benzene ring (the substituents are selected from hydrogen atom, a halogen atom, nitro group, cyano group, hydroxy group, amino group, an alkyl group, and an alkoxyl group); A represents a 5-membered or 6-membered non-aromatic heterocyclic ring containing one or two contiguous sulfur atoms (the sulfur atoms may independently form oxide); W represents oxo group, hydrogen atom, an alkyl group, hydroxy group, an alkoxyl group, or a halogen atom; and X represents oxygen atom, or sulfur atom), or a salt thereof, which has a superior suppressing action against prostaglandin E2 production and is useful as an active ingredient of medicaments with reduced adverse reactions such as gastrointestinal disorders.
摘要翻译:由式(1)表示的化合物或其盐(表示单键或双键; R1表示氢原子或烷基; R2和R3表示氢原子或烷基; R4和R5表示 氢原子,羟基,烷氧基,卤素原子或一或二烷基取代的氨基; R 6表示氢原子,氰基,烷氧基羰基或羧基; R 7表示一个或两个取代基 在苯环上(取代基选自氢原子,卤素原子,硝基,氰基,羟基,氨基,烷基和烷氧基); A表示5元或6元非 含有一个或两个相邻硫原子的杂环(硫原子可以独立地形成氧化物); W表示氧代基,氢原子,烷基,羟基,烷氧基或卤素原子; X表示氧原子 ,或硫原子)或其盐 对前列腺素E2产生的抑制作用较差,并且可用作具有减少的不良反应如胃肠道疾病的药物的活性成分。
摘要:
A symbol information reading apparatus may include an imaging element; an image memory structured to store image data; a position detecting processor structured to fetch the image data and structured to detect a position of symbol information. The position detecting processor may include a temporary area judgment unit that structured to calculate a variation of brightness, and structured to judge a temporary area having a possibility of corresponding to the symbol information; a correlation map creating unit that structured to calculate correlation between areas neighboring in a direction perpendicular to the scanning direction, and structured to create a map showing an area provided with large correlation values; a labeling unit that structured to check presence of a basic barcode on the correlation map, and structured to label an area judged as having the basic barcode; and a position determining unit that structured to detect a position of the symbol information recorded.
摘要:
A semiconductor memory device has a memory cell array, a first transistor of a first conductivity type, a second transistor of a second conductivity type and a third transistor of the first conductivity type. A source or drain of the first transistor is connected to each of word lines. A drain of the second transistor is connected to a gate of the first transistor. A source of the third transistor is connected to the gate of the first transistor. The gates of the second transistor and the third transistor are not connected, a source of the second transistor is not connected to a drain of the third transistor, and the gate of the second transistor and the drain of the third transistor have different voltage levels corresponding to opposite logic levels each other.
摘要:
A method for magnetic character recognition may include preparing standard array data of peak intervals; generating a regeneration waveform out of a character string of magnetic characters printed on a surface of an information data recording medium; segmenting a character waveform of each magnetic character out of the regeneration waveform; generating array data of peak intervals out of an array pattern of a plurality of intervals between peaks that are included in the character waveform; and comparing the array data of peak intervals with the standard array data of peak intervals; wherein, based on a comparison result of comparing the array data of peak intervals with the standard array data of peak intervals, a read character is identified with a character corresponding to an array data of peak intervals that shows the highest coincidence.
摘要:
A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.
摘要:
A request change unit outputs a command as a request under control of a judgment control unit. A response condition determination unit determines a condition that is to be matched by a correct response which is to be returned from the other device-in-communication in reply to the command if the other device-in-communication operates in conformity with a protocol. A check unit checks a response received from the other device-in-communication in reply to the command, against the condition. If the received response does not match the condition but is correctable to match the condition as a result of the check, a response correction unit corrects the received response to match the condition under control of the judgment control unit.
摘要:
The present invention is to provide a label automatic application device and a label automatic application method capable of easily removing a large number of single labels one by one from a label band body formed by coupling the single labels while displacing and overlapping the labels with each other in the longitudinal direction, so as to automatically apply a large amount of labels to application bodies per unit time.A label band body 8 formed by displacing a little and overlapping many single labels with each other is attached to a label transfer belt conveyor 32. The label transfer belt conveyor 32 to which the label band body 8 is attached and a product transfer belt conveyor 52 for moving application bodies 54 are arranged so that the forward directions thereof are the opposite directions to each other. The air is jetted by an air jet means 38 to a surface onto which a bonding means 5 is coated in a front end 1y of a lead label 1a of the label band body 8. The surface onto which the bonding means 5 is coated in the front end 1y of the lead label 1a is warped in the inversion direction and rolled up outward, so that the application body 54 easily comes into contact with the bonding means 5 of the front end 1y.
摘要:
A molecular assembly comprising a host metal complex with a space formed therein, and compounds having substituents enclosed in the metal complex within the space and molecular chains bonded to the substituents and extending to the exterior of the metal complex, wherein two or more substituents are enclosed in the same space of the metal complex.
摘要:
A NAND cell unit includes memory cells which are connected in series. An erase operation is effected on all memory cells. Then, a soft-program voltage, which is opposite in polarity to the erase voltage applied in an erase operation, is applied to all memory cells, thereby setting all memory cells out of an over-erased state. Thereafter, a program voltage of 20V is applied to the control gate of a selected memory cell, 0V is applied to the control gates of the two memory cells provided adjacent to the selected memory cell, and 11V is applied to the control gates of the remaining memory cells. Data is thereby programmed into the selected memory cell. The time for which the program voltage is applied to the selected memory cell is adjusted in accordance with the data to be programmed into the selected memory cell. Hence, data “0” can be correctly programmed into the selected memory cell, multi-value data can be read from any selected memory cell at high speed.