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公开(公告)号：US07785934B2
公开(公告)日：2010-08-31
申请号：US11680131
申请日：2007-02-28
IPC分类号： H01L21/82
CPC分类号： H01L23/5256 , H01L21/76807 , H01L21/76892 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A structure fabrication method. The method includes providing a structure. The structure includes (a) a substrate layer, (b) a first fuse electrode in the substrate layer, and (c) a fuse dielectric layer on the substrate layer and the first fuse electrode. The method further includes (i) forming an opening in the fuse dielectric layer such that the first fuse electrode is exposed to a surrounding ambient through the opening, (ii) forming a fuse region on side walls and bottom walls of the opening such that the fuse region is electrically coupled to the first fuse electrode, and (iii) after said forming the fuse region, filling the opening with a dielectric material.
摘要翻译： 一种结构制造方法。 该方法包括提供结构。 该结构包括（a）衬底层，（b）衬底层中的第一熔丝电极，以及（c）衬底层和第一熔丝电极上的熔丝绝缘层。 该方法还包括（i）在熔丝电介质层中形成开口，使得第一熔丝电极通过开口暴露于周围环境，（ii）在开口的侧壁和底壁上形成保险丝区域，使得 熔融区域电耦合到第一熔丝电极，以及（iii）在形成熔丝区域之后，用电介质材料填充该开口。
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22.发明授权BEOL interconnect structures with simultaneous high-k and low-k dielectric regions 有权BEOL互连结构，同时具有高k和低k电介质区域公开(公告)号：US07768130B2
公开(公告)日：2010-08-03
申请号：US11939671
申请日：2007-11-14
IPC分类号： H01L23/52
CPC分类号： H01L23/5329 , H01L21/7682 , H01L21/76849 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , Y10S438/942 , H01L2924/00
摘要： A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer underlying the second ILD layer. A plurality of columnar air gaps is formed in the first ILD. The columnar air gap structure is created using a two-phase photoresist material for providing different etching selectivity during subsequent processing.
摘要翻译： 一种用于制造和后端（BEOL）金属化结构的方法包括同时存在的高k和低k电介质区域。 互连结构包括第一层间电介质（ILD）层和具有位于第二ILD层下面的第一ILD层的第二ILD层。 在第一ILD中形成多个柱状气隙。 使用两相光致抗蚀剂材料制造柱状气隙结构，用于在随后的处理期间提供不同的蚀刻选择性。
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公开(公告)号：US20080206978A1
公开(公告)日：2008-08-28
申请号：US11680131
申请日：2007-02-28
IPC分类号： H01L23/525 , H01L21/44 , H01L29/00
CPC分类号： H01L23/5256 , H01L21/76807 , H01L21/76892 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A structure fabrication method. The method includes providing a structure. The structure includes (a) a substrate layer, (b) a first fuse electrode in the substrate layer, and (c) a fuse dielectric layer on the substrate layer and the first fuse electrode. The method further includes (i) forming an opening in the fuse dielectric layer such that the first fuse electrode is exposed to a surrounding ambient through the opening, (ii) forming a fuse region on side walls and bottom walls of the opening such that the fuse region is electrically coupled to the first fuse electrode, and (iii) after said forming the fuse region, filling the opening with a dielectric material.
摘要翻译： 一种结构制造方法。 该方法包括提供结构。 该结构包括（a）衬底层，（b）衬底层中的第一熔丝电极，以及（c）衬底层和第一熔丝电极上的熔丝绝缘层。 该方法还包括（i）在熔丝电介质层中形成开口，使得第一熔丝电极通过开口暴露于周围环境，（ii）在开口的侧壁和底壁上形成保险丝区域，使得 熔融区域电耦合到第一熔丝电极，以及（iii）在形成熔丝区域之后，用电介质材料填充该开口。
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公开(公告)号：US07408374B2
公开(公告)日：2008-08-05
申请号：US11566796
申请日：2006-12-05
IPC分类号： G01R31/26
CPC分类号： G01R31/2858 , H01L21/76886 , H01L2924/0002 , H04B7/0814 , H01L2924/00
摘要： Systems and methods for controlling electro-migration, and reducing the deleterious effects thereof, are disclosed. Embodiments provide for reversal of an applied voltage to an integrated circuit when a measurement indicative of an extent of electro-migration indicates that a healing cycle of operation is warranted. During the healing cycle, circuits of the integrated circuit function normally, but electro-migration effects are reversed. In one embodiment, micro-electro-mechanical switches are provided at a lowest level of metallization to switch the direction of current through the levels of metallization of the integrated circuit. In another embodiment, if the measurement indicative of the extent of electro-migration exceeds a reference level by a specifiable amount, then the voltage applied to the integrated circuit is reversed in polarity to cause current to switch directions to counter electro-migration. A plurality of switches are provided to switch current directions through a lowest level of metallization so that the circuits function normally even though the polarity of the applied voltage has been reversed.
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公开(公告)号：US20080179660A1
公开(公告)日：2008-07-31
申请号：US11668717
申请日：2007-01-30
IPC分类号： H01L29/78 , H01L21/28 , H01L21/4763
CPC分类号： H01L21/76829 , H01L21/76831 , H01L29/6653 , H01L29/78
摘要： Contact forming methods and a related semiconductor device are disclosed. One method includes forming a first liner over the structure and the substrate, the first liner covering sidewall of the structure; forming a dielectric layer over the first liner and the structure; forming a contact hole in the dielectric layer to the first liner; forming a second liner in the contact hole including over the first liner covering the sidewall; removing the first and second liners at a bottom of the contact hole; and filling the contact hole with a conductive material to form the contact. The thicker liner(s) over the sidewall of the structure prevents shorting, and allows for at least maintaining any intrinsic stress in one or more of the liner(s).
摘要翻译： 公开了触点形成方法和相关的半导体器件。 一种方法包括在结构和衬底上形成第一衬里，第一衬套覆盖结构的侧壁; 在所述第一衬垫和所述结构上形成介电层; 在所述介电层中形成与所述第一衬垫的接触孔; 在所述接触孔中形成第二衬垫，包括覆盖所述侧壁的所述第一衬套上方; 在接触孔的底部移除第一和第二衬垫; 并用导电材料填充接触孔以形成接触。 结构侧壁上较厚的衬套防止短路，并允许至少保持一个或多个衬套中的任何固有应力。
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26.发明授权Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions 有权同时形成高k和低k电介质区域的制造方法和BEOL互连结构公开(公告)号：US07348280B2
公开(公告)日：2008-03-25
申请号：US11266741
申请日：2005-11-03
IPC分类号： H01L21/469
CPC分类号： H01L23/5329 , H01L21/7682 , H01L21/76849 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , Y10S438/942 , H01L2924/00
摘要： A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer underlying the second ILD layer. A plurality of columnar air gaps is formed in the first ILD. The columnar air gap structure is created using a two-phase photoresist material for providing different etching selectivity during subsequent processing.
摘要翻译： 一种用于制造和后端（BEOL）金属化结构的方法包括同时存在的高k和低k电介质区域。 互连结构包括第一层间电介质（ILD）层和具有位于第二ILD层下面的第一ILD层的第二ILD层。 在第一ILD中形成多个柱状气隙。 使用两相光致抗蚀剂材料制造柱状气隙结构，用于在随后的处理期间提供不同的蚀刻选择性。
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公开(公告)号：US08610244B2
公开(公告)日：2013-12-17
申请号：US13494327
申请日：2012-06-12
IPC分类号： H01L23/52
CPC分类号： H01L23/5256 , H01L21/76807 , H01L21/76892 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A structure. The structure includes: a substrate, a first electrode in the substrate, first dielectric layer above both the substrate and the first electrode, a second dielectric layer above the first dielectric layer, and a fuse element buried in the first dielectric layer. The first electrode includes a first electrically conductive material. A top surface of the first dielectric layer is further from a top surface of the first electrode than is any other surface of the first dielectric layer. The first dielectric layer includes a first dielectric material and a second dielectric material. A bottom surface of the second dielectric layer is in direct physical contact with the top surface of the first dielectric layer. The second dielectric layer includes the second dielectric material.
摘要翻译： 一个结构。 该结构包括：衬底，衬底中的第一电极，衬底和第一电极上的第一电介质层，第一电介质层上方的第二电介质层和埋在第一介电层中的熔丝元件。 第一电极包括第一导电材料。 第一电介质层的顶表面比第一电介质层的任何其它表面更远离第一电极的顶表面。 第一电介质层包括第一电介质材料和第二电介质材料。 第二电介质层的底表面与第一电介质层的顶表面直接物理接触。 第二电介质层包括第二电介质材料。
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公开(公告)号：US08232620B2
公开(公告)日：2012-07-31
申请号：US12870921
申请日：2010-08-30
IPC分类号： H01L23/52
CPC分类号： H01L23/5256 , H01L21/76807 , H01L21/76892 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A structure. The structure includes: a substrate; a first electrode in the substrate; a dielectric layer on top of the substrate and the electrode; a second dielectric layer on the first dielectric layer, said second dielectric layer comprising a second dielectric material; a fuse element buried in the first dielectric layer, wherein the fuse element (i) physically separates, (ii) is in direct physical contact with both, and (iii) is sandwiched between a first region and a second region of the dielectric layer; and a second electrode on top of the fuse element, wherein the first electrode and the second electrode are electrically coupled to each other through the fuse element.
摘要翻译： 一个结构。 该结构包括：基底; 衬底中的第一电极; 在所述基板和所述电极的顶部上的介电层; 在所述第一介电层上的第二电介质层，所述第二电介质层包括第二电介质材料; 埋入第一介电层中的熔丝元件，其中熔融元件（i）物理分离，（ii）与二者直接物理接触，（iii）被夹在介电层的第一区域和第二区域之间; 以及在所述熔丝元件的顶部上的第二电极，其中所述第一电极和所述第二电极通过所述熔丝元件彼此电耦合。
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公开(公告)号：US07714452B2
公开(公告)日：2010-05-11
申请号：US11847776
申请日：2007-08-30
申请人： Lawrence A. Clevenger , Mukta Ghate Farooq , Louis Lu-Chen Hsu , William Francis Landers , Donna S. Zupanski-Nielson , Carl John Radens , Chih-Chao Yang
发明人： Lawrence A. Clevenger , Mukta Ghate Farooq , Louis Lu-Chen Hsu , William Francis Landers , Donna S. Zupanski-Nielson , Carl John Radens , Chih-Chao Yang
CPC分类号： H05K3/3436 , H01L23/13 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L24/11 , H01L24/12 , H01L24/17 , H01L24/49 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/0603 , H01L2224/06102 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1403 , H01L2224/49109 , H01L2224/81801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H05K2201/094 , H05K2201/09736 , H05K2201/09845 , Y02P70/613 , H01L2224/29099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.
摘要翻译： 一种电结构和方法，包括电和机械地连接到第二衬底的第一衬底。 第一基板包括第一导电焊盘和第二导电焊盘。 第二基板包括第三导电焊盘，第四导电焊盘和第一导电部件。 第四导电焊盘包括与第一导电构件的高度不同的高度。 导电构件电连接和机械地连接到第四导电垫。 第一焊球将第一导电焊盘连接到第三导电焊盘。 第一焊球包括第一直径。 第二焊球将第二导电焊盘连接到第一导电构件。 第二焊球包括第二直径。 第一直径大于所述第二直径。
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公开(公告)号：US07471101B2
公开(公告)日：2008-12-30
申请号：US11942241
申请日：2007-11-19
IPC分类号： G01R31/02
CPC分类号： G01R31/2858 , H01L21/76886 , H01L2924/0002 , H04B7/0814 , H01L2924/00
摘要： Systems and methods for controlling electro-migration, and reducing the deleterious effects thereof, are disclosed. Embodiments provide for reversal of an applied voltage to an integrated circuit when a measurement indicative of an extent of electro-migration indicates that a healing cycle of operation is warranted. During the healing cycle, circuits of the integrated circuit function normally, but electro-migration effects are reversed. In one embodiment, micro-electro-mechanical switches are provided at a lowest level of metallization to switch the direction of current through the levels of metallization of the integrated circuit. In another embodiment, if the measurement indicative of the extent of electro-migration exceeds a reference level by a specifiable amount, then the voltage applied to the integrated circuit is reversed in polarity to cause current to switch directions to counter electro-migration. A plurality of switches are provided to switch current directions through a lowest level of metallization so that the circuits function normally even though the polarity of the applied voltage has been reversed.
摘要翻译： 公开了用于控制电迁移的系统和方法，并减少其有害影响。 实施例提供了当指示电迁移程度的测量指示操作的愈合周期是有必要的时将施加的电压反转到集成电路。 在愈合周期中，集成电路的电路正常工作，但电迁移效应相反。 在一个实施例中，微电子机械开关设置在最低级别的金属化处，以将电流方向切换到集成电路的金属化水平。 在另一个实施例中，如果指示电迁移程度的测量超过参考电平达指定量，则施加到集成电路的电压的极性反转，导致电流切换方向以对抗电迁移。 提供多个开关以切换电流方向通过最低金属化水平，使得即使施加的电压的极性已经被反转，电路也能正常工作。
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