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    GRATING COUPLER
    21.
    发明申请
    GRATING COUPLER 审中-公开
    镀金联轴器

    公开(公告)号：US20130136396A1

    公开(公告)日：2013-05-30

    申请号：US13620636

    申请日：2012-09-14

    Applicant: Do Won KIM ,  Gyungock Kim

    Inventor： Do Won KIM ,  Gyungock Kim

    IPC: G02B6/34

    CPC classification number: G02B6/34

    Abstract: Disclosed is a grating coupler which includes an optical waveguide transferring an optical signal; and a diffraction grating formed on the optical waveguide. The diffraction grating includes protrusions continuously formed and the protrusions have different heights.

    Abstract translation: 公开了一种光栅耦合器，其包括传输光信号的光波导; 以及形成在光波导上的衍射光栅。 衍射光栅包括连续形成的突起，突起具有不同的高度。

    Electro-optic device
    22.
    发明授权
    Electro-optic device 有权
    电光装置

    公开(公告)号：US08320037B2

    公开(公告)日：2012-11-27

    申请号：US12652623

    申请日：2010-01-05

    Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

    Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

    IPC: G02F1/01 ,  H01L31/0232

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212

    Abstract: An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.

    Abstract translation: 提供了一种电光装置。 电光器件包括设置在第一导电类型半导体层和施加反向通孔电压的第二导电类型半导体层之间的结层。 第一导电型半导体层和第二导电类型半导体层之间具有约2至4倍的掺杂浓度差，因此可以提供优化用于高速度，低功耗和高集成度的电光装置。

    Semiconductor devices and methods of forming the same
    23.
    发明授权
    Semiconductor devices and methods of forming the same 有权
    半导体器件及其形成方法

    公开(公告)号：US08288185B2

    公开(公告)日：2012-10-16

    申请号：US12788542

    申请日：2010-05-27

    Applicant: In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    Inventor： In Gyoo Kim ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

    IPC: H01L21/00

    CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

    Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

    Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

    SILICON PHOTONICS CHIP
    24.
    发明申请
    SILICON PHOTONICS CHIP 审中-公开
    硅胶片

    公开(公告)号：US20110135252A1

    公开(公告)日：2011-06-09

    申请号：US12816323

    申请日：2010-06-15

    Applicant: Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

    Inventor： Do Won KIM ,  Gyungock Kim ,  Junghyung Pyo ,  Duk Jun Kim ,  In Gyoo Kim

    IPC: G02B6/30 ,  G02B6/10

    CPC classification number: G02B6/43 ,  G02B6/262 ,  G02B6/4292

    Abstract: Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.

    Abstract translation: 提供了与发光器件热分离的硅光子芯片。 硅光子芯片包括集成在硅衬底上的光电器件。 光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。 信号光产生装置与光电装置热分离，并与光电装置光学连接。

    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME
    25.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 有权
    半导体集成电路，包括用于光通信的光栅耦合器及其形成方法

    公开(公告)号：US20100111469A1

    公开(公告)日：2010-05-06

    申请号：US12684677

    申请日：2010-01-08

    Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    IPC: G02B6/122

    CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

    Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

    Silicon semiconductor based high-speed ring optical modulator
    26.
    发明授权
    Silicon semiconductor based high-speed ring optical modulator 失效
    硅半导体高速环形光调制器

    公开(公告)号：US07646942B2

    公开(公告)日：2010-01-12

    申请号：US11833004

    申请日：2007-08-02

    Applicant: Jeong Woo Park ,  Gyungock Kim ,  Hyun Soo Kim ,  Bongki Mheen

    Inventor： Jeong Woo Park ,  Gyungock Kim ,  Hyun Soo Kim ,  Bongki Mheen

    IPC: G02F1/035 ,  G02B6/26

    CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0152 ,  G02F2203/15

    Abstract: Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.

    Abstract translation: 提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。 高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。 折射率变化部分包括双极晶体管。 因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。

    OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS
    27.
    发明申请
    OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS 有权
    光学装置，包括具有调制厚度的门绝缘体

    公开(公告)号：US20090237770A1

    公开(公告)日：2009-09-24

    申请号：US12375343

    申请日：2007-04-24

    Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

    Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

    IPC: G02F1/015 ,  H01L29/78 ,  H01L33/00

    CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

    Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

    Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅绝缘层， 形成在第一半导体层的一部分上，并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

    Current-jump-control circuit including abrupt metal-insulator phase transition device
    28.
    发明申请
    Current-jump-control circuit including abrupt metal-insulator phase transition device 有权
    电流跳跃控制电路包括突变金属 - 绝缘体相变装置

    公开(公告)号：US20050098836A1

    公开(公告)日：2005-05-12

    申请号：US10866274

    申请日：2004-06-10

    Applicant: Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

    Inventor： Hyun Kim ,  Doo Youn ,  Kwang Kang ,  Byung Chae ,  Yong Lim ,  Seong Kim ,  Sungyul Maeng ,  Gyungock Kim

    IPC: H01L21/822 ,  H01L27/04 ,  H01L29/78 ,  H01L45/00 ,  H01L49/00 ,  H02H9/02 ,  H01L29/94

    CPC classification number: H01L45/00

    Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

    Abstract translation: 提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。 突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。 电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。 根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

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