公开(公告)号：US20100202482A1

公开(公告)日：2010-08-12

申请号：US12656165

申请日：2010-01-20

申请人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/02

CPC分类号： H01S5/02276 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/34313 ,  H01S2301/176

摘要： The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.

摘要翻译： 本发明提供一种半导体器件，其实现了低介电常数材料与半导体材料之间的粘合性的改善。 半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。 粘合层具有突出/凹陷结构，并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。

公开(公告)号：US20110249696A1

公开(公告)日：2011-10-13

申请号：US13064524

申请日：2011-03-30

申请人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Koichi Kondo ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Koichi Kondo ,  Naoki Jogan

IPC分类号： H01S5/00

CPC分类号： H01S5/0425 ,  H01S5/18313 ,  H01S5/18338 ,  H01S5/18347

摘要： There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a columnar mesa including a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order, including an oxide confined layer having an unoxidized region in middle of a plane, and having a cross-sectional shape in a plane direction different from a cross-sectional shape of the unoxidized region in a plane direction; and a plurality of metal electrodes formed in regions on a top face of the mesa not facing the unoxidized region.

摘要翻译： 本发明提供一种激光二极管，能够将台面直径设定得较小，而不使用失去设备可靠性的方法，不容易控制。 激光二极管包括：包括第一多层膜反射镜，有源层和第二多层膜反射镜的柱状台面，其包括在平面中间具有未氧化区域的氧化物限制层，并且具有十字形 在与平面方向上的非氧化区域的横截面形状不同的平面方向上的截面形状; 以及形成在不面向未氧化区域的台面的顶面的区域中的多个金属电极。

公开(公告)号：US20110042558A1

公开(公告)日：2011-02-24

申请号：US12805494

申请日：2010-08-03

申请人： Terukazu Naruse ,  Takahiro Arakida ,  Hidehiko Nakata ,  Yuji Masui ,  Naoki Jogan

发明人： Terukazu Naruse ,  Takahiro Arakida ,  Hidehiko Nakata ,  Yuji Masui ,  Naoki Jogan

IPC分类号： H01L31/12 ,  H01L31/0203 ,  B05D3/06

CPC分类号： H01L31/0203 ,  G02B6/4204 ,  G02B6/4239 ,  G02B6/4286 ,  G02B7/025 ,  G02B19/0014 ,  G02B19/0061

摘要： An optical device and a method of making an optical device is described herein. The optical device comprises a housing, an optical element, a base structure that supports the optical element and that interfaces with the housing to form a gap section between an outer wall section of the base structure and an inner wall section of the housing, a resin within the gap section fixing the housing to the base structure, and a light accommodation section in the housing. The light accommodation section accommodates a transmittance of light to the resin within the gap section.

摘要翻译： 本文描述了光学装置和制造光学装置的方法。 光学装置包括壳体，光学元件，支撑光学元件并与壳体接合以在基部结构的外壁部分和壳体的内壁部分之间形成间隙部分的基部结构，树脂 在将壳体固定到基座结构的间隙部分内，以及壳体中的光容纳部分。 光容纳部容纳在间隙部内的树脂的透光率。

公开(公告)号：US08658449B2

公开(公告)日：2014-02-25

申请号：US12662099

申请日：2010-03-31

申请人： Naoki Jogan ,  Takahiro Arakida

发明人： Naoki Jogan ,  Takahiro Arakida

IPC分类号： H01L21/18 ,  C30B25/14

CPC分类号： H01L21/02546 ,  H01L21/02395 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/3054 ,  H01S5/32316 ,  H01S2304/00 ,  H01S2304/04

摘要： A method of manufacturing a semiconductor layer with which inactivation of impurity is able to be inhibited by a simple method, a semiconductor layer in which inactivation of impurity is inhibited, a method of manufacturing a laser diode with which inactivation of impurity is able to be inhibited by a simple method, and a laser diode including a semiconductor layer in which inactivation of impurity is inhibited are provided. In the method of manufacturing a semiconductor layer, after a semiconductor layer is formed by epitaxial growth with the use of AsH3, supply of AsH3 is stopped without separately supplying new gas when process temperature is 500 deg C. or more.

摘要翻译： 通过简单的方法制造能够抑制杂质失活的半导体层的制造方法，抑制杂质失活的半导体层，能够抑制杂质失活的激光二极管的制造方法 通过简单的方法，提供了包含抑制杂质失活的半导体层的激光二极管。 在制造半导体层的方法中，在使用AsH3通过外延生长形成半导体层之后，当处理温度为500℃以上时，不间断地供给新气体而停止供给AsH3。

公开(公告)号：US20100260222A1

公开(公告)日：2010-10-14

申请号：US12662099

申请日：2010-03-31

申请人： Naoki Jogan ,  Takahiro Arakida

发明人： Naoki Jogan ,  Takahiro Arakida

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01S5/323

CPC分类号： H01L21/02546 ,  H01L21/02395 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/3054 ,  H01S5/32316 ,  H01S2304/00 ,  H01S2304/04

摘要： A method of manufacturing a semiconductor layer with which inactivation of impurity is able to be inhibited by a simple method, a semiconductor layer in which inactivation of impurity is inhibited, a method of manufacturing a laser diode with which inactivation of impurity is able to be inhibited by a simple method, and a laser diode including a semiconductor layer in which inactivation of impurity is inhibited are provided. In the method of manufacturing a semiconductor layer, after a semiconductor layer is formed by epitaxial growth with the use of AsH3, supply of AsH3 is stopped without separately supplying new gas when process temperature is 500 deg C. or more.

摘要翻译： 通过简单的方法制造能够抑制杂质失活的半导体层的制造方法，抑制杂质失活的半导体层，能够抑制杂质失活的激光二极管的制造方法 通过简单的方法，提供了包含抑制杂质失活的半导体层的激光二极管。 在制造半导体层的方法中，在使用AsH3通过外延生长形成半导体层之后，当处理温度为500℃以上时，不间断地供给新气体而停止供给AsH3。