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21.发明授权Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask 有权薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法公开(公告)号：US07456038B2
公开(公告)日：2008-11-25
申请号：US11397925
申请日：2006-04-03
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译： 一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后使用i射线作为光线照射抗蚀剂，形成接触孔。
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公开(公告)号：US07046341B2
公开(公告)日：2006-05-16
申请号：US11118479
申请日：2005-05-02
CPC分类号： G03F7/70783 , G03F7/70791
摘要： A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.
摘要翻译： 本发明的基板处理装置具有保持基板的保持基座，检测波动或厚度不均匀的装置以及操作检测装置的控制装置。 通过基于检测到的基板的起伏或厚度不均匀性，局部地移动保持基板，使基板在待加工的场的范围内变形。 因此可以防止形成在基板上的图像的模糊。
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公开(公告)号：US20050190352A1
公开(公告)日：2005-09-01
申请号：US11118479
申请日：2005-05-02
IPC分类号： H01L21/027 , G03F7/20 , G03B27/42
CPC分类号： G03F7/70783 , G03F7/70791
摘要： A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.
摘要翻译： 本发明的基板处理装置具有保持基板的保持基座，检测波动或厚度不均匀的装置以及操作检测装置的控制装置。 通过基于检测到的基板的起伏或厚度不均匀性，局部地移动保持基板，使基板在待加工的场的范围内变形。 因此可以防止形成在基板上的图像的模糊。
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公开(公告)号：US06927839B2
公开(公告)日：2005-08-09
申请号：US10685494
申请日：2003-10-16
IPC分类号： H01L21/027 , G03F7/20 , G03B27/58 , G03B27/62
CPC分类号： G03F7/70783 , G03F7/70791
摘要： A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.
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公开(公告)号：US06515719B2
公开(公告)日：2003-02-04
申请号：US09877141
申请日：2001-06-11
申请人： Hirotaka Yamaguchi , Hiroaki Tanaka , Seiji Suzuki , Hiroaki Matsuyama , Takahiko Watanabe , Yoshihiko Hirai , Masayoshi Suzuki , Toshiya Ishii , Teruaki Suzuki , Syuusaku Kido
发明人： Hirotaka Yamaguchi , Hiroaki Tanaka , Seiji Suzuki , Hiroaki Matsuyama , Takahiko Watanabe , Yoshihiko Hirai , Masayoshi Suzuki , Toshiya Ishii , Teruaki Suzuki , Syuusaku Kido
IPC分类号： G02F11343
CPC分类号： G02F1/134336 , G02F1/133707 , G02F1/136213 , G02F2001/136236
摘要： A liquid crystal display apparatus includes a first substrate, a second substrate and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes on a surface facing the second substrate, a plurality of gate bus lines extending into a row direction, a plurality of drain bus lines extending into a column direction, and a plurality of pixels arranged in matrix. Each of the plurality of pixels includes a portion of one of the plurality of gate bus lines associated with the pixel, a portion of one of the plurality of drain bus lines associated with the pixel, a portion of a capacitance line associated with the pixel, a pixel transistor having a source and a drain which is connected with the associated drain bus line, a control electrode connected with the source and formed in at least a portion of a region of the pixel, and a the pixel electrode which is in an electrically floating state and which is formed to cover the control electrode and a portion of the capacitance line through at least one of a first insulating film and second insulating film.
摘要翻译： 液晶显示装置包括第一基板，第二基板和介于第一基板和第二基板之间的液晶层。 第一基板包括在面向第二基板的表面上，延伸到行方向的多个栅极总线，延伸到列方向的多个漏极总线以及以矩阵排列的多个像素。 多个像素中的每一个包括与像素相关联的多个栅极总线之一的一部分，与像素相关联的多个漏极总线之一的一部分，与像素相关联的电容线的一部分， 具有源极和漏极的像素晶体管，其与相关联的漏极总线连接;控制电极，与源极连接并形成在像素的区域的至少一部分中;以及像素电极，其处于电气 并且其形成为通过第一绝缘膜和第二绝缘膜中的至少一个覆盖控制电极和电容线的一部分。
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26.发明授权公开(公告)号：US08537297B2
公开(公告)日：2013-09-17
申请号：US12693771
申请日：2010-01-26
IPC分类号： G02F1/136
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/1225 , H01L27/127 , H01L29/78681 , H01L29/7869
摘要： A vertically aligned thin-film transistor array substrate in which there is no reduction in aperture ratio includes an etching-stop layer formed on an insulating layer; a passivation layer formed on the insulating layer that includes the etching-stop layer; a depression formed in the passivation layer and hollowing the passivation layer to the surface of the etching-stop layer; and a pixel electrode, which is recessed in conformity with the depression, formed on the passivation layer that includes the depression; wherein the etching-stop layer comprises a transparent semiconductor.
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公开(公告)号：US20090121374A1
公开(公告)日：2009-05-14
申请号：US12260191
申请日：2008-10-29
CPC分类号： C04B35/495 , C04B35/6262 , C04B2235/3201 , C04B2235/3203 , C04B2235/3255 , C04B2235/3267 , C04B2235/3294 , C04B2235/3298 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/768 , C04B2235/77 , C04B2235/787
摘要： A method of manufacturing a crystal oriented ceramics is disclosed. The method comprises preparing step, mixing step, shaping step and sintering method. At least one of anisotropically shaped powder, used as raw material, and a compact, formed by shaping step, is selected to have an orientation degree of 80% or more with a full width at half maximum (FWHM) of 15° or less according to a rocking curve method. A microscopic powder, having an average grain diameter one-third or less that of anisotropically shaped powder, is prepared for mixing therewith to prepare raw material mixture. The raw material mixture is shaped into the compact so as to allow oriented planes of anisotropically shaped powder to be oriented in a nearly identical direction. In a sintering step, anisotropically shaped powder and microscopic powder are sintered with each other to obtain the crystal oriented ceramics.
摘要翻译： 公开了一种制造晶体取向陶瓷的方法。 该方法包括制备步骤，混合步骤，成型步骤和烧结方法。 选择通过成形步骤形成的各向异性粉末作为原料的至少一种粉末和通过成型步骤形成的成型体，具有80％以上的取向度，半高全宽（FWHM）为15°以下，根据 到摇摆曲线法。 制备具有各向异性粉末的三分之一以下的平均粒径的微细粉末与其混合以制备原料混合物。 将原料混合物成型为成型体，以使得各向异性粉末的取向平面能够以几乎相同的方向取向。 在烧结步骤中，将各向异性粉末和微观粉末彼此烧结，得到结晶取向陶瓷。
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公开(公告)号：US06881535B2
公开(公告)日：2005-04-19
申请号：US10173923
申请日：2002-06-19
申请人： Hirotaka Yamaguchi
发明人： Hirotaka Yamaguchi
IPC分类号： G02F1/13 , G02F1/1335 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/28 , H01L21/336 , H01L29/786
CPC分类号： G02F1/133553 , G02F1/133555 , G02F1/1362 , G02F1/136227 , G02F1/1368
摘要： To provide a liquid crystal display apparatus exhibiting optimum display performance despite reduction in the number of PR(photolithography) processes, and a method for producing the apparatus. A method for producing a liquid crystal display apparatus having a first substrate including a thin film transistor and a reflector on an insulating substrate. An etching mask is formed on a metal layer formed on the insulating substrate and, using this etching mask, the metal layer is etched to form a constituent portion of the thin film transistor and protrusions. Only the etching mask is caused to reflow to cover exposed surface portions of the constituent portion of the thin film transistor and protrusions and near-by surface portions of the insulating substrate with the etching mask as the insulating substrate is partially exposed. Using the etching mask, recesses are formed in an exposed area of the insulating substrate. A reflector is formed on the protrusions and recesses.
摘要翻译： 提供尽管PR（光刻）工艺的数量减少而呈现最佳显示性能的液晶显示装置及其制造方法。 一种制造液晶显示装置的方法，该液晶显示装置具有在绝缘基板上具有薄膜晶体管和反射器的第一基板。 在形成在绝缘基板上的金属层上形成蚀刻掩模，并且使用该蚀刻掩模蚀刻金属层以形成薄膜晶体管和突起的构成部分。 仅使用蚀刻掩模来回流以覆盖薄膜晶体管的组成部分的暴露表面部分，并且使用作为绝缘基板的蚀刻掩模的绝缘基板的突出部和近旁表面部分露出。 使用蚀刻掩模，在绝缘基板的暴露区域中形成凹部。 反射器形成在突出部和凹部上。
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公开(公告)号：US06514804B1
公开(公告)日：2003-02-04
申请号：US09574407
申请日：2000-05-18
申请人： Hirotaka Yamaguchi
发明人： Hirotaka Yamaguchi
IPC分类号： H01L2184
CPC分类号： H01L29/66765 , H01L29/78669
摘要： A gate-insulating layer, intrinsic amorphous-silicon semiconductor layer, and ohmic contact layer are continuously formed so as to cover a gate electrode on a substrate to remove a natural oxide film from the surface of the ohmic contact layer by performing radio-frequency sputter etching before forming source and drain electrodes. After the natural oxide film is removed, a metallic layer mainly containing Al is formed on the gate-insulating layer and ohmic contact layer.
摘要翻译： 连续地形成栅极绝缘层，本征非晶硅半导体层和欧姆接触层，以覆盖基板上的栅电极，以通过执行射频溅射从欧姆接触层的表面除去天然氧化膜 在形成源极和漏极之前进行蚀刻。 在除去自然氧化物膜之后，在栅极绝缘层和欧姆接触层上形成主要含有Al的金属层。
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公开(公告)号：US06788355B1
公开(公告)日：2004-09-07
申请号：US09695212
申请日：2000-10-25
申请人： Satoshi Ihida , Hirotaka Yamaguchi , Hiroaki Tanaka , Takasuke Hayase , Hiroshi Kanou , Wakahiko Kaneko , Tae Miyahara , Michiaki Sakamoto , Shinichi Nakata
发明人： Satoshi Ihida , Hirotaka Yamaguchi , Hiroaki Tanaka , Takasuke Hayase , Hiroshi Kanou , Wakahiko Kaneko , Tae Miyahara , Michiaki Sakamoto , Shinichi Nakata
IPC分类号： G02F11343
CPC分类号： G02F1/13458 , G02F1/1362 , G02F1/1368 , G02F2001/136231
摘要： A method for fabricating an active matrix LCD panel for use in an active matrix LCD device includes the step of forming a passivation layer acting as a channel protection layer for protecting an amorphous silicon active layer, thereby reducing the number of photolithographic steps. A transparent conductive film is used for forming a gate electrode and a pixel electrode before formation of an amorphous silicon film for the TFTs.
摘要翻译： 制造用于有源矩阵LCD器件的有源矩阵LCD面板的方法包括形成用作保护非晶硅有源层的沟道保护层的钝化层的步骤，从而减少光刻步骤的数量。 在形成用于TFT的非晶硅膜之前，使用透明导电膜来形成栅电极和像素电极。
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