公开(公告)号：US07217666B2

公开(公告)日：2007-05-15

申请号：US10792330

申请日：2004-03-02

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Jerry Lo ,  Aron Pentek ,  Yi Zheng

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Jerry Lo ,  Aron Pentek ,  Yi Zheng

IPC分类号： H01L21/461

CPC分类号： B24B1/00 ,  G11B5/00 ,  G11B5/3116 ,  G11B5/3163 ,  H01L21/00 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A method for forming a high aspect ratio magnetic structure in a magnetic write head using a combination of chemical mechanical polishing and reactive ion etching.

摘要翻译： 使用化学机械抛光和反应离子蚀刻的组合在磁写头中形成高纵横比磁结构的方法。

公开(公告)号：US20050189319A1

公开(公告)日：2005-09-01

申请号：US10789777

申请日：2004-02-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  John Yang

IPC分类号： B44C1/22 ,  C23F1/00 ,  C23F3/04 ,  G11B5/17 ,  G11B5/31 ,  H01L21/321

CPC分类号： H01L21/3212 ,  C23F3/04 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/4906 ,  Y10T29/49064

摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.

摘要翻译： 化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。 该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

公开(公告)号：US07881010B2

公开(公告)日：2011-02-01

申请号：US11956277

申请日：2007-12-13

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Edward Hin Pong Lee ,  Aron Pentek ,  Sue Siyang Zhang ,  Yi Zheng

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Edward Hin Pong Lee ,  Aron Pentek ,  Sue Siyang Zhang ,  Yi Zheng

IPC分类号： G11B5/187

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3146 ,  G11B5/315

摘要： A method for manufacturing a magnetic write head having a write pole with a flared step feature that defines a secondary flare point. The method involves depositing a magnetic write pole material on a substrate and then depositing a magnetic material over the write pole material followed by a non-magnetic material. A first mask is formed having a front edge to define the location of the secondary flare point, and one or more material removal processes are used to remove portions of the magnetic layer and non-magnetic layer that are not protected by this first mask. The first mask is replaced by a second mask that is configured to define a write pole, and an ion milling is performed to define the write pole. Shadowing from the magnetic layer and non-magnetic layer form a flared secondary flare point.

摘要翻译： 一种用于制造具有定义二次闪光点的具有扩口步骤特征的写极的磁写头的方法。 该方法包括将磁性写入极材料沉积在衬底上，然后将磁性材料沉积在写入极材料上，随后是非磁性材料。 形成第一掩模，其具有前边缘以限定次级火炬点的位置，并且使用一个或多个材料去除过程来去除未被该第一掩模保护的磁性层和非磁性层的部分。 第一个掩模由配置为定义写入极的第二个掩模代替，并且执行离子铣削来定义写入极点。 从磁性层和非磁性层的阴影形成扩张的次级耀斑点。

公开(公告)号：US07768743B2

公开(公告)日：2010-08-03

申请号：US11747656

申请日：2007-05-11

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Changqing Shi

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Changqing Shi

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/315

摘要： A perpendicular magnetic recording write head supported on an air-bearing slider has a magnetic write pole (WP) with a WP end at the air-bearing surface (ABS) having a width generally equal to the data track width and a trailing shield (TS) with a TS end generally coplanar with the WP end. The TS has a first portion with a width at the TS end substantially wider than the width of the WP end and a TS notch (TSN) portion with a width at the TS end generally equal to the width of the WP end. The TS first portion has a height in a direction perpendicular to the ABS, and the TSN portion has a throat height (TH) in a direction perpendicular to the ABS that is less than the height of the TS first portion. A nonmagnetic gap layer separates the WP from the TSN portion and a nonmagnetic pad layer separates the WP from the TS first portion. The pad layer has a front edge generally parallel to and recessed from the ABS that defines the TH of the TSN portion, and a thickness that defines the length of the TSN portion in the along-the-track direction.

摘要翻译： 支撑在空气轴承滑块上的垂直磁记录写头具有在空气轴承表面（ABS）上具有WP端的磁性写入极（WP），其宽度大体上等于数据磁道宽度和后屏蔽（TS ），其TS端通常与WP端共面。 TS具有第一部分，其宽度在TS端大大宽于WP端的宽度，TS陷口（TSN）部分的宽度在TS端大致等于WP端的宽度。 TS第一部分具有垂直于ABS的方向的高度，并且TSN部分在垂直于ABS的方向上具有小于TS第一部分的高度的喉部高度（TH）。 非磁隙层将WP与TSN部分分开，非磁性垫层将WP与TS第一部分分离。 衬垫层具有大致平行于ABS并且从ABS凹入的前边缘，其限定TSN部分的TH，以及限定沿着轨道方向的TSN部分的长度的厚度。

公开(公告)号：US20090128964A1

公开(公告)日：2009-05-21

申请号：US11944125

申请日：2007-11-21

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Changqing Shi ,  Sue Siyang Zhang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Changqing Shi ,  Sue Siyang Zhang

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49798

摘要： A method for manufacturing a magnetic write head having a wrap around magnetic shield. The method allows a highly accurate short wavelength such as 193 mm photolithography to be used to accurately define the placement and critical dimension of wrap around magnetic shield. The method includes the formation of a magnetic write pole, top gap, and side gap and the deposition of a RIEable fill layer thereover, and CMP to planarization. A 193 nm photolithography and ion milling is used to form a mask over the RIEable layer and one or more reactive ion etching processes are performed to pattern the RIEable layer through 193 nm photolithography mask. A wrap around shield can then be electroplated into the opening formed in the RIEable layer.

摘要翻译： 一种用于制造具有围绕磁屏蔽的磁性写入头的方法。 该方法允许使用高精度的短波长（例如193mm光刻）来精确地定义磁屏蔽环绕的放置和临界尺寸。 该方法包括形成磁性写入极，顶部间隙和侧面间隙以及在其上沉积RIEable填充层，并将CMP平坦化。 使用193nm光刻和离子研磨在RIEable层上形成掩模，并且执行一个或多个反应离子蚀刻工艺以通过193nm光刻掩模对RIEable层进行图案化。 然后可以将环绕的护罩电镀到形成在RIEable层中的开口中。

公开(公告)号：US07287314B2

公开(公告)日：2007-10-30

申请号：US10789777

申请日：2004-02-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

IPC分类号： G11B5/17 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C23F3/04 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/4906 ,  Y10T29/49064

摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.

摘要翻译： 化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。 该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

公开(公告)号：US20060043060A1

公开(公告)日：2006-03-02

申请号：US10928002

申请日：2004-08-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： B82Y25/00 ,  G11B5/3163 ,  G11B5/3169

摘要： A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.

摘要翻译： 描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。 浆料包括研磨剂，优选氧化铝，腐蚀抑制剂，优选苯并三唑（BTA）和优选过氧化氢的氧化剂。 该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。 该方法可用于平面化由磁头中的氧化铝包围的金属结构。 氧化铝填充物沉积到稍低于金属高度的最终目标高度。 在氧化铝上沉积薄的二氧化硅阻挡层。 使用所选择的浆料执行CMP以将晶片平坦化到停止层。 优选地，仅剩下可忽略量的止挡层，并且金属结构的高度与再填充氧化铝的沉积高度基本相同。

公开(公告)号：US20060021973A1

公开(公告)日：2006-02-02

申请号：US10903833

申请日：2004-07-30

申请人： Hung-Chin Guthrie ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ming Jiang

IPC分类号： C03C15/00

CPC分类号： C03C15/00 ,  C03C19/00 ,  G11B5/8404

摘要： A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession/trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density head. With a fine lapping plate with a fixed-abrasive nanogrinding process, PTR can be improved to a mean of about 1.0 nm.

摘要翻译： 化学机械纳米研磨工艺实现近零极极尖衰退（PTR），以最小化头部换能器的磁空间损失，使介质间隔损耗，氧化铝凹陷/后缘轮廓变化，以及光滑的表面光洁度，同时最小化多层 薄膜和硬质基材满足高密度面的要求。 使用具有固定研磨纳米研磨工艺的精细研磨板，PTR可以提高至约1.0nm的平均值。

公开(公告)号：US06984613B1

公开(公告)日：2006-01-10

申请号：US10931385

申请日：2004-08-31

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara

IPC分类号： C11D17/00

CPC分类号： C11D3/0073 ,  C11D9/007 ,  C11D9/30 ,  C11D11/0047

摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.

摘要翻译： 本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。 优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）。 本发明的氧化铝填充物中的CoFeNi结构的清洗液优选含有浓度范围为1％〜5％的4-甲基-1H-苯并三唑，浓度范围为1％〜5％的5-甲基-1H-苯并三唑 5％的浓度范围为1％至5％的氢化的4-甲基-1H-苯并三唑，浓度范围为1％至5％的氢化的5-甲基-1H-苯并三唑，浓度范围为 5％至10％，浓度范围为65％至95％的水。 清洁溶液通常与去离子水一起使用以产生具有0.1至10体积％范围的清洁溶液的施用溶液。

公开(公告)号：US20050239222A1

公开(公告)日：2005-10-27

申请号：US10831592

申请日：2004-04-23

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

IPC分类号： B24B5/00 ,  B24B37/04 ,  B24B47/02 ,  B24B49/03 ,  G01R31/26 ,  H01L21/66

CPC分类号： B24B49/03 ,  B24B37/042

摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“背侧压力”的化学机械抛光的参数。 在一些实施例中，通过基于中心到边缘轮廓模型的逻辑测试，模型的确定系数R平方和背侧压力的当前值来确定背侧压力。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。