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21.发明申请GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法公开(公告)号：US20110176569A1
公开(公告)日：2011-07-21
申请号：US12836281
申请日：2010-07-14
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/3202 , H01S5/3211
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.
摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。
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公开(公告)号：US20110164638A1
公开(公告)日：2011-07-07
申请号：US12837209
申请日：2010-07-15
CPC分类号： H01S5/3202 , B82Y20/00 , G01N21/62 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/20 , H01S5/2009 , H01S5/34333
摘要： In a group-III nitride semiconductor laser device, a laser structure includes a support base comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface, and a semiconductor region provided on the semipolar principal surface of the support base. An electrode is provided on the semiconductor region of the laser structure. An angle between a normal axis to the semipolar principal surface and the c-axis of the hexagonal group-III nitride semiconductor is in a range of not less than 45° and not more than 80° or in a range of not less than 100° and not more than 135°. The laser structure includes a laser stripe extending in a direction of a waveguide axis above the semipolar principal surface of the support base. The laser structure includes first and second surfaces and the first surface is a surface opposite to the second surface. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal group-III nitride semiconductor and the normal axis, a laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The waveguide axis extends from one to the other of the first and second fractured faces. The laser structure has first and second recesses provided each at a portion of the edge of the first surface in the first fractured face. The first and second recesses extend from the first surface of the laser structure, and bottom ends of the first and second recesses are located apart from the edge of the second surface of the laser structure. The first recess has an end at the first surface and the second recess has an end at the first surface. A first distance between the laser stripe and the end of the first recess is smaller than a second distance between the laser stripe and the end of the second recess.
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23.发明申请GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法公开(公告)号：US20110158276A1
公开(公告)日：2011-06-30
申请号：US12837269
申请日：2010-07-15
IPC分类号： H01S5/343 , H01L21/304
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/3202 , H01S2301/14
摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. The c-axis of the hexagonal III-nitride semiconductor of the support base is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The angle ALPHA is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces, and the first surface is opposite to the second surface. Each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. The support base of the laser structure has a recess provided at a portion of the edge of the first surface in the first fractured face. The recess extends from a back surface of the support base, and an end of the recess is apart from the edge of the second surface of the laser structure.
摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括由六方晶III族氮化物半导体构成并具有半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 在激光结构的半导体区域上设置电极。 支撑基体的六边形III族氮化物半导体的c轴相对于正六边形III族氮化物半导体的m轴的法线轴线倾斜一角度ALPHA。 角度ALPHA在不小于45度且不大于80度的范围内或在不小于100度且不超过135度的范围内。 激光结构包括与由六边形III族氮化物半导体的m轴和法线轴限定的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面，并且第一表面与第二表面相对。 第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。 激光结构的支撑基座具有设置在第一断裂面中的第一表面的边缘的一部分处的凹部。 凹部从支撑基座的后表面延伸，并且凹部的端部与激光结构的第二表面的边缘分开。
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公开(公告)号：US20110128983A1
公开(公告)日：2011-06-02
申请号：US12836253
申请日：2010-07-14
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/2201 , H01S5/3202
摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.
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公开(公告)号：US20090028762A1
公开(公告)日：2009-01-29
申请号：US12180051
申请日：2008-07-25
申请人： Koji KATAYAMA , Toru Futami
发明人： Koji KATAYAMA , Toru Futami
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00835 , B01J2219/00853 , B01J2219/00873 , B01J2219/00891
摘要： A fine channel device, having an inlet opening for introducing a gas and an inlet path interconnecting with this inlet opening, a fine channel interconnecting with the inlet path, a discharge path interconnecting with the fine channel, and a discharge opening interconnecting with this discharge path. The inner diameter of the inlet path is greater than that of the fine channel, and either increases gradually, or remains identical, with increasing distance from the position where the inlet opening and the inlet path are in interconnection with each other.
摘要翻译： 具有用于引入气体的入口和与该入口相互连接的入口通道的精细通道装置，与入口路径相互连接的精细通道，与微通道相互连接的放电路径以及与该排出路径互连的排出口 。 入口通道的内径大于细通道的内径，并且随着距离入口开口和入口路径彼此互连的位置的距离的增加而逐渐增加或保持相同。
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公开(公告)号：US20100150308A1
公开(公告)日：2010-06-17
申请号：US12631389
申请日：2009-12-04
申请人： Masao TSUNO , Kiyoshi MIYAZAKI , Shinya YAMAMOTO , Yasuji YAMAMOTO , Yasuhiro YAMAMOTO , Tetsuji MATSUMURA , Koji KATAYAMA
发明人： Masao TSUNO , Kiyoshi MIYAZAKI , Shinya YAMAMOTO , Yasuji YAMAMOTO , Yasuhiro YAMAMOTO , Tetsuji MATSUMURA , Koji KATAYAMA
CPC分类号： A01K43/08 , B07C5/346 , G01G9/005 , G01G11/00 , G01N23/04 , G01N33/08 , G01N2223/618 , G01N2223/643
摘要： An X-ray inspection apparatus includes an X-ray radiating part, an X-ray detecting part, a mass estimation unit and a mass class determination unit. The X-ray radiating part is configured and arranged to radiate X-rays to an inspection target. The X-ray detecting part is configured and arranged to detect the X-rays radiated from the X-ray radiating part that transmitted through the inspection target. The mass estimation unit is configured to estimate a mass of the inspection target based on an amount of the X-rays detected by the X-ray detecting part. The mass class determination unit is configured to determine which mass class among a plurality of mass classes within a preset range the inspection target belongs to based on the mass of the inspection target estimated by the mass estimation unit.
摘要翻译： X射线检查装置包括X射线辐射部，X射线检测部，质量估计单元和质量等级确定单元。 X射线辐射部被配置和布置成将X射线照射到检查对象。 X射线检测部被配置为检测从检查对象物透射的X射线照射部射出的X射线。 质量估计单元被配置为基于由X射线检测部检测到的X射线的量来估计检查对象的质量。 质量等级确定单元被配置为基于由质量估计单元估计的检查对象的质量来确定检查对象所属的预设范围内的多个质量等级之中的质量等级。
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公开(公告)号：US20110129997A1
公开(公告)日：2011-06-02
申请号：US13022088
申请日：2011-02-07
IPC分类号： H01L21/283
CPC分类号： H01L21/3081 , H01S5/0425 , H01S5/2086
摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.
摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20）， 形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层 掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70） 由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80） 以去除掩模层和形成的保护膜 n掩模层的上表面。
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