公开(公告)号：US07439096B2

公开(公告)日：2008-10-21

申请号：US09789397

申请日：2001-02-21

申请人： Kirk W. Baldwin ,  Zhenan Bao ,  Peter Mach ,  John A. Rogers

发明人： Kirk W. Baldwin ,  Zhenan Bao ,  Peter Mach ,  John A. Rogers

IPC分类号： H01L51/40

CPC分类号： H01L51/107 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545 ,  H01L51/5256

摘要： An encapsulated semiconductor device and method wherein an encapsulant material is deposited on the device in an environment that enhances device performance. Illustrative encapsulant materials are organic polymers, silicon polymers and metal/polymer-layered encapsulants. Encapsulant formation environments may include inert, reducing and ammonia gas environment. Further disclosed are an encapsulated transistor and a semiconductor device.

摘要翻译： 一种封装的半导体器件和方法，其中密封剂材料在增强器件性能的环境中沉积在器件上。 示例性的密封剂材料是有机聚合物，硅聚合物和金属/聚合物分层的密封剂。 封装形成环境可包括惰性，还原和氨气环境。 进一步公开的是封装晶体管和半导体器件。

公开(公告)号：US20080087878A1

公开(公告)日：2008-04-17

申请号：US11550250

申请日：2006-10-17

申请人： Martin KOENEMANN ,  Peter Erk ,  Marcos Gomez ,  Zhenan Bao ,  Mang-Mangike (Mike) Ling

发明人： Martin KOENEMANN ,  Peter Erk ,  Marcos Gomez ,  Zhenan Bao ,  Mang-Mangike (Mike) Ling

IPC分类号： H01L29/08 ,  C07D471/02 ,  H01L51/40

CPC分类号： H01L51/0053 ,  C07D471/06 ,  C09B5/62 ,  C09B57/08 ,  H01L51/001 ,  H01L51/0545 ,  Y02E10/549

摘要： The present invention relates to the use of of perylene diimide derivatives as air-stable n-type organic semiconductors.

摘要翻译： 本发明涉及苝二酰亚胺衍生物作为空气稳定的n型有机半导体的用途。

公开(公告)号：US07338835B2

公开(公告)日：2008-03-04

申请号：US11177602

申请日：2005-07-08

申请人： Zhenan Bao

发明人： Zhenan Bao

IPC分类号： H01L51/40

CPC分类号： H01L51/0541 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0558

摘要： The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

摘要翻译： 本发明提供了一种装置及其制造方法。 该装置包括具有表面的衬底和位于衬底表面附近的有机场效应晶体管（OFET）。 OFET包括栅极，沟道，源电极和漏电极。 该通道包括具有共轭多重键的有机分子的致密化层，有机分子的轴线基本上垂直于表面。

公开(公告)号：US20060141664A1

公开(公告)日：2006-06-29

申请号：US11354365

申请日：2006-02-15

申请人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

发明人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

公开(公告)号：US20050285099A1

公开(公告)日：2005-12-29

申请号：US10875478

申请日：2004-06-24

申请人： Zhenan Bao ,  Evert-Jan Borkent ,  Dawen Li

发明人： Zhenan Bao ,  Evert-Jan Borkent ,  Dawen Li

IPC分类号： H01L21/00 ,  H01L29/08 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0541 ,  H01L51/0036 ,  H01L51/0078 ,  H01L51/0545

摘要： The present invention provides a dual organic field-effect transistor (OFET) structure and a method of fabricating the structure. The dual OFET structure includes an n-type organic semiconductor layer and a p-type organic semiconductor layer in contact with each other along an interface and forming a stack. The dual OFET structure also includes a source electrode and a drain electrode, the source and drain electrodes being in contact with one of the organic semiconductor layers. The dual OFET structure further includes first and second gate structures located on opposite sides of the stack. The first gate structure is configured to control a channel region of the n-type organic semiconductor layer, and the second gate structure is configured to control a channel region of the p-type organic semiconductor layer.

摘要翻译： 本发明提供一种双有机场效应晶体管（OFET）结构及其制造方法。 双重OFET结构包括沿着界面彼此接触并形成叠层的n型有机半导体层和p型有机半导体层。 双重OFET结构还包括源电极和漏电极，源极和漏极与有机半导体层中的一个接触。 双重OFET结构还包括位于堆叠的相对侧上的第一和第二栅极结构。 第一栅极结构被配置为控制n型有机半导体层的沟道区，并且第二栅极结构被配置为控制p型有机半导体层的沟道区。

公开(公告)号：US06885024B2

公开(公告)日：2005-04-26

申请号：US10256885

申请日：2002-09-27

申请人： Zhenan Bao ,  Howard Edan Katz ,  Christian Kloc

发明人： Zhenan Bao ,  Howard Edan Katz ,  Christian Kloc

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0012 ,  H01L51/0014

摘要： A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

公开(公告)号：US20050062066A1

公开(公告)日：2005-03-24

申请号：US10671303

申请日：2003-09-24

申请人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

发明人： Zhenan Bao ,  Howard Katz ,  Jeffrey Meth

IPC分类号： H01L27/28 ,  H01L29/739 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

公开(公告)号：US06575013B2

公开(公告)日：2003-06-10

申请号：US09793642

申请日：2001-02-26

申请人： Zhenan Bao ,  Brian Keith Crone ,  Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

发明人： Zhenan Bao ,  Brian Keith Crone ,  Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

IPC分类号： G01N33497

CPC分类号： G01N33/0031 ,  G01N27/4148 ,  G01N33/0047

摘要： An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

公开(公告)号：US06555411B1

公开(公告)日：2003-04-29

申请号：US10024831

申请日：2001-12-18

申请人： Zhenan Bao ,  Edwin Arthur Chandross ,  John A. Rodgers

发明人： Zhenan Bao ,  Edwin Arthur Chandross ,  John A. Rodgers

IPC分类号： H01L540

CPC分类号： H01L51/0021 ,  H01L21/2885 ,  H01L51/0541 ,  H01L51/102

摘要： The specification describes thin film transistor (TFT) devices with source/drain contacts made by a metallo organic deposition (MOD) method wherein a metallo organic compound/metal particulate mixture is deposited to form a base pattern, and the base pattern is then plated with gold. The porous, relatively high resistance base pattern is thereby converted to a corrosion resistant, low resistance contact. The plating covers the sidewalls of the base pattern, thus allowing the final channel length to be less than the minimum design rule used for depositing the base pattern.

摘要翻译： 本说明书描述了具有通过金属有机沉积（MOD）方法制造的源极/漏极触点的薄膜晶体管（TFT）器件，其中沉积金属有机化合物/金属颗粒混合物以形成基底图案，然后将基底图案镀覆 金。 因此，多孔，较高电阻的基底图案被转变成耐腐蚀，低电阻的接触。 电镀覆盖基底图案的侧壁，从而允许最终通道长度小于用于沉积基底图案的最小设计规则。

公开(公告)号：US06429040B1

公开(公告)日：2002-08-06

申请号：US09543808

申请日：2000-04-06

申请人： Zhenan Bao ,  Xiaochen Linda Chen

发明人： Zhenan Bao ,  Xiaochen Linda Chen

IPC分类号： H01L5140

CPC分类号： H01L51/0508 ,  H01L51/0036 ,  H01L51/0044 ,  H01L51/0512

摘要： An organic semiconducting material having bi-polar charge transport characteristics is described which may comprise the active layer of a field-effect transistor. The semiconducting material comprises a bi-polar polymeric film effective for hole or electron transport comprising a polymer having a conjugated framework with functional moieties capable of solvating ions or promoting ionic charge transport. The conjugated framework is selected from at least one of thiophene, pyrrole, benzene, naphthalene, antrhacene, and antrhacene-dione, and the functional moieties are selected from (i) functional side groups comprising salts of carboxylic acid and sulfonic acid and (ii) functional sites selected from heteroatoms having electron lone pairs comprising sulfur, nitrogen, and oxygen. The field-effect mobility of the bi-polar polymeric film is at least 10−3 cm2/Vs when operating as an n-type or p-type device.

摘要翻译： 描述了具有双极电荷传输特性的有机半导体材料，其可以包括场效应晶体管的有源层。 所述半导体材料包括对空穴或电子传输有效的双极性聚合物膜，其包含具有共轭骨架的聚合物，所述共轭骨架具有能够溶剂化离子或促进离子电荷转移的官能部分。 共轭骨架选自噻吩，吡咯，苯，萘，并五烯和并十七烯中的至少一种，功能部分选自（i）包含羧酸和磺酸盐的官能侧基和（ii） 选自具有包含硫，氮和氧的电子孤对的杂原子的官能位点。 当作为n型或p型器件工作时，双极性聚合物膜的场效应迁移率至少为10 -3 cm 2 / Vs。