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公开(公告)号：US06575013B2
公开(公告)日：2003-06-10
申请号：US09793642
申请日：2001-02-26
IPC分类号： G01N33497
CPC分类号： G01N33/0031 , G01N27/4148 , G01N33/0047
摘要： An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.
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2.发明授权Thin-film transistor monolithically integrated with an organic light-emitting diode 有权与有机发光二极管单片集成的薄膜晶体管
公开(公告)号：US6150668A
公开(公告)日：2000-11-21
申请号：US391729
申请日：1999-09-08
IPC分类号： H01L29/786 , G09F9/30 , H01L27/15 , H01L27/32 , H01L51/00 , H01L51/30 , H01L51/40 , H01L33/00
CPC分类号： H01L27/3248 , H01L27/3274 , H01L51/0545 , H01L51/0036 , H01L51/0038 , H01L51/005
摘要： A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.
摘要翻译： 公开了一种其中一个或多个薄膜晶体管与发光二极管单片集成的器件。 薄膜晶体管具有有机半导体层。 发光二极管的发光层也是有机材料。 通过将薄膜晶体管和发光二极管的制造集成在衬底上并通过采用低成本制造技术来经济地制造器件。
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公开(公告)号：US06661299B2
公开(公告)日：2003-12-09
申请号：US09793050
申请日：2001-02-26
IPC分类号： H03B100
CPC分类号： G01N27/4141 , G01N27/4148 , H01L27/28 , H01L27/286 , H01L51/0036 , H01L51/0078 , H01L51/0545
摘要： Circuits include at least one-odor sensitive organic transistor having a conduction channel whose conductivity changes in response to certain odors. The organic transistors are interconnected to increase their response to selected odor signals. The organic transistors may be interconnected to form a ring oscillator whose frequency of oscillation changes in response to an odor signal and in which the alternating signal applied to the gate electrodes of the organic transistors enhances their recovery and reduces their drift.
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4.发明授权Process for fabricating integrated circuit devices having thin film transistors 有权制造具有薄膜晶体管的集成电路器件的工艺公开(公告)号：US06197663B1
公开(公告)日：2001-03-06
申请号：US09456210
申请日：1999-12-07
IPC分类号： H01L2130
CPC分类号： H01L29/78603 , H01L29/66765 , H01L29/78681 , H01L51/0021 , H01L51/0036 , H01L51/0545
摘要： A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.
摘要翻译： 公开了一种用于制造集成电路器件的工艺。 集成电路具有多个TFT和电互连结构。 在该过程中，TFT的至少一些成分形成在第一基板上。 至少在第二基板上形成互连结构。 将两个基板层叠在一起以形成具有完全形成的TFT的集成电路器件。
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5.发明授权Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor 失效该文章包括适于偏置以形成N型或P型晶体管的有机薄膜晶体管公开(公告)号：US06278127B1
公开(公告)日：2001-08-21
申请号：US08441142
申请日：1995-05-15
IPC分类号： H01L5100
CPC分类号： H01L51/0562 , B82Y10/00 , G09G3/3648 , G09G2300/08 , G11C13/0014 , H01L27/283 , H01L51/0036 , H01L51/0046 , H01L51/0068 , H01L51/0081 , H01L51/0541 , H01L51/0545
摘要： Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.
摘要翻译： 公开了根据偏置条件可以是n沟道或p沟道晶体管的有机薄膜晶体管。 期望这种晶体管在互补电路中被广泛使用。 本发明晶体管的具体实施方案包括15nm厚的α-6T层，其上具有40nm厚的C60层。 后者通过适当的电惰性层，特别是通过40nm的α-6T层被保护免受环境的降解。
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公开(公告)号：US6136702A
公开(公告)日：2000-10-24
申请号：US450525
申请日：1999-11-29
IPC分类号： H01L21/28 , H01L21/288 , H01L21/336 , H01L21/44 , H01L29/786 , H01L51/10 , H01L51/40
CPC分类号： H01L51/0545 , H01L21/288 , H01L27/283 , H01L51/0021 , H01L51/105 , H01L51/0023
摘要： The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni--P on a base conductor, preferably TiN.sub.x, by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.
摘要翻译： 该说明书描述了与薄膜晶体管集成电路中的有机半导体兼容的源极/漏极接触材料。 接触材料是镍/金，其中镍通过无电镀而作为Ni-P电镀在基底导体上，优选为TiN x上，并且通过置换电镀沉积金覆盖层。 意外地发现，以这种方式形成Ni / Au触点基本上延长了TFT器件的寿命。
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公开(公告)号：US06107117A
公开(公告)日：2000-08-22
申请号：US770535
申请日：1996-12-20
申请人： Zhenan Bao , Ananth Dodabalapur , Yi Feng , Venkataram Reddy Raju
发明人： Zhenan Bao , Ananth Dodabalapur , Yi Feng , Venkataram Reddy Raju
IPC分类号： C09K3/00 , H01L21/336 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0036 , H01L51/0003 , H01L51/0516 , H01L51/0545
摘要： A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.
摘要翻译： 公开了一种用于制造薄膜晶体管的工艺，其中有源层是在20℃下载流子迁移率大于10 -3 cm 2 / Vs和小于约10 -6 S / cm 2的电导率的有机半导体材料。 有机半导体材料是区域性（3-烷基噻吩）聚合物。 有机半导体薄膜是通过将区域状聚合物和溶剂的溶液涂覆在基材上形成的。 聚（3-烷基噻吩）膜具有其中噻吩链具有平面堆叠的优选取向，因此聚合物主链通常平行于基底表面。
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8.发明授权Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device 有权使用四端杂交硅/有机场效应传感器器件的结构和方法公开(公告)号：US07397072B2
公开(公告)日：2008-07-08
申请号：US11291729
申请日：2005-12-01
申请人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
发明人： Ananth Dodabalapur , Deepak Sharma , Daniel Fine
IPC分类号： H01L27/28
CPC分类号： H01L27/286 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N27/4141 , H01L2924/0002 , H01L2924/00
摘要： A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.
摘要翻译： 四端场效应器件包括具有硅N型半导体沟道和N +源极和漏极区的硅场效应器件。 在N型半导体通道上沉积绝缘体。 有机半导体材料沉积在形成有机半导体通道的绝缘体栅极上并暴露于周围环境中。 漏极和源电极被沉积并电耦合到有机半导体沟道的相应末端。 两个独立的源电极和两个独立的漏极形成新的场效应器件的四个端子。 有机半导体通道可以电充电和放电，并且响应于周围环境中的化学品而对其电荷进行改性。 响应于有机半导体通道中的电荷，硅半导体沟道的导电性由公共栅中的感应电荷调制。
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公开(公告)号：US06384804B1
公开(公告)日：2002-05-07
申请号：US09199364
申请日：1998-11-25
IPC分类号： G09G332
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0852 , G09G2310/0251 , G09G2320/0219 , G09G2320/029 , G09G2320/043
摘要： A display apparatus according to our invention comprises a multiplicity of nominally identical smart pixels, a given pixel comprising an organic light emitting diode and an organic or inorganic (e.g., amorphous or polycrystalline Si) pixel FET. The display also comprises drive/compensation circuitry adapted for mitigating or eliminating non-idealities associated with the organic components. Among the non-idealities are variations in mobility and/or threshold voltage of the pixel FET from transistor to transistor, change in mobility and/or threshold voltage with time in a given pixel FET, change over time of the LED characteristics, capacitive signal feed-through through the gate insulator of the pixel FETs by short rise/fall time pulses, poor on-off ratio of the pixel FET, and charge leakage through the gate dielectric. Exemplary drive/compensation circuitry is disclosed.
摘要翻译： 根据我们的发明的显示装置包括多个名义上相同的智能像素，给定像素包括有机发光二极管和有机或无机（例如，非晶或多晶Si）像素FET。 显示器还包括适于减轻或消除与有机部件相关联的非理想性的驱动/补偿电路。 在非理想性中，像素FET从晶体管到晶体管的迁移率和/或阈值电压的变化，给定像素FET中的迁移率和/或阈值电压随时间的变化，LED特性随时间的变化，电容信号馈送 通过像素FET的栅极绝缘体通过短的上升/下降时间脉冲，像素FET的差的开/关比以及通过栅极电介质的电荷泄漏。 公开了示例性的驱动/补偿电路。
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公开(公告)号：US5674636A
公开(公告)日：1997-10-07
申请号：US528389
申请日：1995-09-13
CPC分类号： H05B33/22 , H01L51/5265 , H05B33/12 , H01S5/36 , Y10S428/917
摘要： Optical microcavities are potentially useful as light emitters for, e.g., flat panel displays. Such microcavities comprise a layer structure, including two spaced apart reflectors that define the cavity, with a layer or layers of organic (electroluminescent) material disposed between the reflectors. We have discovered that a microcavity can simultaneously emit radiation of two or more predetermined colors such that the emission has a desired apparent color, exemplarily white. Emission of two or more colors requires that the effective optical length of the cavity is selected such that the cavity is a multimode cavity, with the wavelengths of two or more of the standing wave modes that are supported by the cavity lying within the emission region of the electroluminescence spectrum of the active material. A particular embodiment with two organic emitting (active) layers is disclosed.
摘要翻译： 光学微腔可能用作例如平板显示器的发光体。 这种微腔包括层结构，包括限定空腔的两个间隔开的反射器，其中设置在反射器之间的一层或多层有机（电致发光）材料。 我们已经发现，微腔可以同时发射两种或更多种预定颜色的辐射，使得发射具有所需的表观颜色，示例性地为白色。 两种或更多种颜色的发射需要选择空腔的有效光学长度，使得空腔是多模腔，其中两个或更多个驻波模式的波长由位于发射区域的发射区域内的腔支撑 活性物质的电致发光光谱。 公开了具有两个有机发射（有源）层的具体实施方案。
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