公开(公告)号：US08101525B2

公开(公告)日：2012-01-24

申请号：US12371085

申请日：2009-02-13

申请人： Meihua Shen ,  Noel Sun ,  Nicolas Gani ,  Han-Hsiang Chen ,  Eric Pei ,  Weimin Zeng ,  Thorsten B. Lill ,  Uday Mitra ,  Ellie Y. Yieh

发明人： Meihua Shen ,  Noel Sun ,  Nicolas Gani ,  Han-Hsiang Chen ,  Eric Pei ,  Weimin Zeng ,  Thorsten B. Lill ,  Uday Mitra ,  Ellie Y. Yieh

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31122 ,  H01L21/28123 ,  H01L21/28167 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.

摘要翻译： 描述了制造具有镧族氧化物层的半导体器件的方法。 具有镧族氧化物层的栅极叠层设置在基板的上方。 镧族氧化物层的至少一部分被改性以形成镧族卤化物部分。 用水蒸气处理除去镧族卤化物部分。

公开(公告)号：US20090208880A1

公开(公告)日：2009-08-20

申请号：US12034000

申请日：2008-02-20

申请人： SRINIVAS D. NEMANI ,  Shankar Venkataraman ,  Ellie Y. Yieh

发明人： SRINIVAS D. NEMANI ,  Shankar Venkataraman ,  Ellie Y. Yieh

IPC分类号： G03F7/00 ,  C23F1/00

CPC分类号： G03F7/0757 ,  H01L21/02164 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31612 ,  H01L21/6719 ,  H01L21/67207

摘要： Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.

摘要翻译： 根据本发明的一个实施方案公开了使用紫外光图案化硬掩膜的方法和系统。 本发明的实施例减轻了沉积和蚀刻光刻胶的处理问题，以产生硬掩模图案。 首先将诸如氧化硅的硬掩模层沉积在沉积室内的衬底上。 在一些情况下，硬掩模层在沉积之后被烘烤或退火。 之后，硬掩模层的一部分用紫外线照射。 紫外光产生硬掩模材料的暴露和未曝光部分的图案。 曝光后，可能会发生腐蚀过程，例如湿蚀刻，从而去除硬掩模的未曝光部分。 在蚀刻之后，可以对硬掩模进行退火，烘烤或进行等离子体处理。

公开(公告)号：US20090120584A1

公开(公告)日：2009-05-14

申请号：US12059820

申请日：2008-03-31

申请人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

发明人： Dmitry Lubomirsky ,  Toan Q. Tran ,  Lun Tsuei ,  Manuel A. Hernandez ,  Kirby H. Floyd ,  Ellie Y. Yieh

IPC分类号： C23F1/08 ,  B05C13/00 ,  B05C15/00 ,  H01L21/677 ,  B05C21/00

CPC分类号： H01L21/6719 ,  H01L21/67017 ,  H01L21/68742 ,  H01L21/68792

摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.

摘要翻译： 描述半导体处理系统。 该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。 该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。 该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。 提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。 耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。 安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。 反平衡力减小了支架和基板支架的挠曲。

公开(公告)号：US20090042407A1

公开(公告)日：2009-02-12

申请号：US12253700

申请日：2008-10-17

申请人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

发明人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

IPC分类号： H01L21/469

CPC分类号： C23C16/45591 ,  C23C16/4405 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

摘要翻译： 用于半导体处理室的气体分配器包括一个主体。 主体包括形成在主体内并适于将第一流体从第一流体供应管线穿过第一通道传递到第一开口的第一通道。 第二通道形成在主体内并且适于使来自第二流体供应管线的第二流体通过第二通道传递到第二开口。 第一和第二开口布置成在流体通过开口之后将流体混合在体外。

公开(公告)号：US20080121178A1

公开(公告)日：2008-05-29

申请号：US11564122

申请日：2006-11-28

申请人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

发明人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/505

CPC分类号： C23C16/4405 ,  C23C16/45574 ,  C23C16/45591 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

摘要翻译： 用于半导体处理室的气体分配器包括一个主体。 主体包括形成在主体内并适于将第一流体从第一流体供应管线穿过第一通道传送到第一开口的第一通道。 第二通道形成在主体内并且适于使来自第二流体供应管线的第二流体通过第二通道传递到第二开口。 第一和第二开口布置成在流体通过开口之后将流体混合在体外。

公开(公告)号：US20080121177A1

公开(公告)日：2008-05-29

申请号：US11564105

申请日：2006-11-28

申请人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

发明人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

IPC分类号： C23C16/455 ,  H01L21/31 ,  C23C16/513

CPC分类号： C23C16/45591 ,  C23C16/4405 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

公开(公告)号：US07115534B2

公开(公告)日：2006-10-03

申请号：US10847891

申请日：2004-05-18

申请人： Son Van Nguyen ,  Michael D. Armacost ,  Mehul Naik ,  Girish A. Dixit ,  Ellie Y. Yieh

发明人： Son Van Nguyen ,  Michael D. Armacost ,  Mehul Naik ,  Girish A. Dixit ,  Ellie Y. Yieh

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76808

摘要： Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.

摘要翻译： 提供了用于沉积电介质材料的方法，用作防蚀涂层和牺牲电介质材料在镶嵌形成中。 在一个方面，提供了一种处理衬底的方法，包括通过使含氧有机硅化合物和酸性化合物反应，在酸性电介质层上沉积光致抗蚀剂材料，并使光致抗蚀剂层图形化，在衬底上沉积酸性介电层。 通过蚀刻部分特征定义，沉积酸性电介质材料，蚀刻特征定义的其余部分，然后除去酸性介电材料以形成特征定义，可以将酸性介电层用作形成特征定义的牺牲层。

公开(公告)号：US07033945B2

公开(公告)日：2006-04-25

申请号：US10857829

申请日：2004-06-01

申请人： Jeong Soo Byun ,  Zheng Yuan ,  Shankar Venkataraman ,  M. Ziaul Karim ,  Thanh N. Pham ,  Ellie Y. Yieh

发明人： Jeong Soo Byun ,  Zheng Yuan ,  Shankar Venkataraman ,  M. Ziaul Karim ,  Thanh N. Pham ,  Ellie Y. Yieh

IPC分类号： H01L21/311

CPC分类号： H01L21/76224

摘要： A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.

摘要翻译： 填充在基板上相邻的凸起表面之间形成的间隙的方法。 在一个实施例中，该方法包括在衬底上沉积硼掺杂石英玻璃（BSG）层，以使用热CVD工艺部分填充间隙; 在高于BSG层的共晶温度的温度下将BSG层暴露于蒸汽环境; 通过将层暴露于含氟蚀刻剂来除去BSG层的上部; 以及在BSG层上沉积未掺杂的二氧化硅玻璃（USG）层以填补间隙的剩余部分。

公开(公告)号：US07758698B2

公开(公告)日：2010-07-20

申请号：US11564122

申请日：2006-11-28

申请人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

发明人： Won B. Bang ,  Srivivas D. Nemani ,  Phong Pham ,  Ellie Y. Yieh

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4405 ,  C23C16/45574 ,  C23C16/45591 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

摘要翻译： 用于半导体处理室的气体分配器包括一个主体。 主体包括形成在主体内并适于将第一流体从第一流体供应管线穿过第一通道传送到第一开口的第一通道。 第二通道形成在主体内并且适于使来自第二流体供应管线的第二流体通过第二通道传递到第二开口。 第一和第二开口布置成在流体通过开口之后将流体混合在体外。

公开(公告)号：US07541297B2

公开(公告)日：2009-06-02

申请号：US11876541

申请日：2007-10-22

申请人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

发明人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

摘要翻译： 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。