公开(公告)号：US08338210B2

公开(公告)日：2012-12-25

申请号：US12814899

申请日：2010-06-14

Applicant: de Chris G. M. Ridder ,  Klaas P. Boonstra ,  Adriaan Garssen ,  Frank Huussen

Inventor： de Chris G. M. Ridder ,  Klaas P. Boonstra ,  Adriaan Garssen ,  Frank Huussen

IPC: H01L21/00

CPC classification number: H01L21/67303 ,  C23C16/45546 ,  C23C16/4587 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/67757 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.

Abstract translation: 一种用于处理太阳能电池的方法，包括：提供垂直炉以接收用于集成电路处理的相互间隔开的圆形半导体晶片阵列; 构成用于太阳能电池基板的处理室装载构造，其中沿着待处理的第一表面延伸的太阳能电池基板的尺寸小于圆形半导体晶片的对应尺寸，使得相互间隔开的太阳能电池基板的多个阵列 可以容纳在处理室中，将太阳能电池基板装载到处理室中; 对太阳能电池基板进行处理室中的处理。

公开(公告)号：US20120189774A1

公开(公告)日：2012-07-26

申请号：US13239090

申请日：2011-09-21

Applicant: Suvi P. Haukka ,  Marko J. Tuominen ,  Antti Rahtu

Inventor： Suvi P. Haukka ,  Marko J. Tuominen ,  Antti Rahtu

IPC: C23C16/06

CPC classification number: C23C16/08 ,  C23C16/0218 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/28562

Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.

Abstract translation: 本发明一般涉及通过原子层沉积来增强在衬底上沉积贵金属薄膜的方法。 使用气态卤化物或金属有机化合物进行处理减少了在特定表面上沉积贵金属的孵育时间。 该方法可用于促进选择性沉积。 例如，通过用卤化物反应物进行预处理可以提高贵金属相对于绝缘体的高k材料的选择性沉积。 此外，可以使用卤化物处理以避免沉积在反应室的石英壁上。

公开(公告)号：US20120009773A1

公开(公告)日：2012-01-12

申请号：US13188087

申请日：2011-07-21

Applicant: Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

Inventor： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC: H01L21/28

CPC classification number: C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

Abstract translation: 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。

公开(公告)号：US20110269310A1

公开(公告)日：2011-11-03

申请号：US13084341

申请日：2011-04-11

Applicant: Ivo Raaijmakers

Inventor： Ivo Raaijmakers

IPC: H01L21/28 ,  B82Y40/00

CPC classification number: H01L21/76823 ,  C23C16/405 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28562 ,  H01L29/665 ,  H01L29/66568

Abstract: A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.

Abstract translation: 在具有高纵横比的结构上的自对准硅化物的方法包括使用原子层沉积（ALD）沉积金属氧化物膜并将金属氧化物膜转化为金属膜以获得均匀的台阶覆盖。 然后将衬底退火，使得直接覆盖图案化和暴露的硅的区域中的金属与硅反应，以在期望的位置形成均匀的金属硅化物。

公开(公告)号：US08012876B2

公开(公告)日：2011-09-06

申请号：US12326792

申请日：2008-12-02

Applicant: Theodorus G. M. Oosterlaken

Inventor： Theodorus G. M. Oosterlaken

IPC: H01L21/44 ,  H01L29/40

CPC classification number: C23C16/4481

Abstract: A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is transformed into a liquid state in the storage container. The liquid state precursor is transported from the storage container to a liquid holding container. The liquid state precursor is transported from the liquid holding container to a reaction chamber. The molten precursor allows the precursor to be metered in the liquid state. The storage container can be heated only when necessary to replenish the liquid holding container, thereby reducing the possibility of thermal decomposition of the precursor.

Abstract translation: 公开了一种使用固体前体进行半导体加工的方法。 固体前体设置在储存容器中。 固体前体在储存容器中转变成液体状态。 液体状态前体从储存容器输送到液体保持容器。 液态前体从液体保持容器输送到反应室。 熔融前体允许前体以液态计量。 储存容器只有在需要补充液体保持容器时才被加热，从而降低了前体热分解的可能性。

公开(公告)号：US20110076402A1

公开(公告)日：2011-03-31

申请号：US12964222

申请日：2010-12-09

Applicant: Marko Tuominen ,  Eric Shero ,  Mohith Verghese

Inventor： Marko Tuominen ,  Eric Shero ,  Mohith Verghese

IPC: C23C16/32 ,  C23C16/00

CPC classification number: C23C16/4481 ,  C23C16/405 ,  C23C16/4483 ,  C23C16/45525

Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

Abstract translation: 一种装置和方法改善了升华容器内固体前体的加热。 在一个实施例中，惰性导热元件分散在固体前体单元中。 例如，导热元件可以包括粉末，珠，棒，纤维等。在一种布置中，微波能量可以直接加热导热元件。

公开(公告)号：US20110020546A1

公开(公告)日：2011-01-27

申请号：US12778411

申请日：2010-05-12

Applicant: Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

Inventor： Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/515

CPC classification number: C23C16/18 ,  C23C16/45534

Abstract: Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds.

Abstract translation: 贵金属膜可以通过原子层沉积（ALD）型工艺沉积。 在优选的实施方案中，通过交替地和顺序地将基底与贵金属前体，氧源和氢源的气相脉冲接触来沉积Ir，Pd和Pt。 氧源优选为活性氧。 优选地，沉积温度小于约200℃。优选地，氢源的脉冲小于10秒。

公开(公告)号：US20100326355A1

公开(公告)日：2010-12-30

申请号：US12881634

申请日：2010-09-14

Applicant: Vladimir Kuznetsov

Inventor： Vladimir Kuznetsov

IPC: H01L21/66 ,  H01L21/46 ,  H01L21/683

CPC classification number: C30B23/005 ,  C23C16/045 ,  C23C16/4404 ,  C23C16/45565 ,  C30B35/002 ,  H01L21/67103 ,  H01L21/67109 ,  Y10T29/41

Abstract: Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

Abstract translation: 半导体处理反应器部件中的孔的尺寸适于促进保护涂层的沉积，例如通过大气压下的化学气相沉积。 在一些实施例中，孔各自具有流动收缩部，其使一部分中的孔变窄，并且还将孔分成一个或多个其它部分。 在一些实施例中，一个或多个其它部分的长宽比为约15:1或更小，或约7:1或更小，并且具有圆柱形或圆锥形横截面形状。 通过化学气相沉积（包括大气压下的化学气相沉积），用诸如碳化硅涂层的保护涂层涂覆孔。

公开(公告)号：US07851019B2

公开(公告)日：2010-12-14

申请号：US12170801

申请日：2008-07-10

Applicant: Marko Tuominen ,  Eric Shero ,  Mohith Verghese

Inventor： Marko Tuominen ,  Eric Shero ,  Mohith Verghese

IPC: C23C16/00

CPC classification number: C23C16/4481 ,  C23C16/405 ,  C23C16/4483 ,  C23C16/45525

Abstract: An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

Abstract translation: 一种装置和方法改善了升华容器内固体前体的加热。 在一个实施例中，惰性导热元件分散在固体前体单元中。 例如，导热元件可以包括粉末，珠，棒，纤维等。在一种布置中，微波能量可以直接加热导热元件。

公开(公告)号：US20100266751A1

公开(公告)日：2010-10-21

申请号：US12820633

申请日：2010-06-22

Applicant: Matti Putkonen

Inventor： Matti Putkonen

IPC: B05D5/12

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L29/517 ,  H01M8/1253 ,  Y02E60/525 ,  Y02P70/56

Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.

Abstract translation: 本发明涉及通过ALD型工艺在衬底上生产氧化物薄膜的方法。 根据该方法，将至少一种金属源材料和至少一种氧源材料的交替气相脉冲进料到反应空间中并与基底接触。 根据本发明，交替使用钇源材料和锆源材料作为金属源材料，以在衬底上形成钇稳定的氧化锆（YSZ）薄膜。