公开(公告)号：US20250031449A1

公开(公告)日：2025-01-23

申请号：US18374877

申请日：2023-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki

IPC: H01L27/12 ,  G02F1/133 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28 ,  H01L29/10 ,  H01L29/786 ,  H03K19/003

Abstract: To provide a novel shift register. Transistors 101 to 104 are provided. A first terminal of the transistor 101 is connected to a wiring 111 and a second terminal of the transistor 101 is connected to a wiring 112. A first terminal of the transistor 102 is connected to a wiring 113 and a second terminal of the transistor 102 is connected to the wiring 112. A first terminal of the transistor 103 is connected to the wiring 113 and a gate of the transistor 103 is connected to the wiring 111 or a wiring 119. A first terminal of the transistor 104 is connected to a second terminal of the transistor 103, a second terminal of the transistor 104 is connected to a gate of the transistor 101, and a gate of the transistor 104 is connected to a gate of the transistor 102.

公开(公告)号：US20250031422A1

公开(公告)日：2025-01-23

申请号：US18785690

申请日：2024-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Daisuke YAMAGUCHI ,  Shinobu KAWAGUCHI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yasumasa YAMANE ,  Tomosato KANAGAWA

IPC: H01L29/26 ,  H10B12/00

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US20250028379A1

公开(公告)日：2025-01-23

申请号：US18716284

申请日：2022-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KUROKAWA ,  Masashi FUJITA ,  Kazuaki OHSHIMA

IPC: G06F1/3287 ,  G11C11/4074 ,  G11C11/4096 ,  H01L29/786

Abstract: A novel semiconductor is provided. The semiconductor includes a first component, a second component, and an instruction portion. The first component includes a first memory circuit having a function of storing first setting information in a state where power is supplied, and a second memory circuit having a function of storing the first setting information in a state where power is not supplied. The second component includes a third memory circuit having a function of storing second setting information in a state where power is supplied, and a fourth memory circuit having a function of storing the second setting information in a state where power is not supplied. The instruction portion has a function of controlling whether power is supplied to each of the first component and the second component. Each of the second memory circuit and the fourth memory circuit includes a transistor including a metal oxide in a semiconductor layer where a channel is formed.

公开(公告)号：US12207462B2

公开(公告)日：2025-01-21

申请号：US17776342

申请日：2020-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuki Tsuda ,  Hiromichi Godo ,  Satoru Ohshita ,  Hitoshi Kunitake

IPC: H10B41/35 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A novel semiconductor device is provided. A structure body extending in a first direction, a first conductor extending in a second direction, and a second conductor extending in the second direction are provided. In a first intersection portion where the structure body and the first conductor intersect with each other, a first insulator, a first semiconductor, a second insulator, a second semiconductor, a third insulator, a fourth insulator, and a fifth insulator are provided concentrically around a third conductor. In a second intersection portion where the structure body and the second conductor intersect with each other, the first insulator, the first semiconductor, the second insulator, a fourth conductor, the second semiconductor, and the third insulator are provided concentrically around the third conductor.

公开(公告)号：US12206023B2

公开(公告)日：2025-01-21

申请号：US18381668

申请日：2023-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/12 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H10K59/121

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US12205622B2

公开(公告)日：2025-01-21

申请号：US18235995

申请日：2023-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L27/12 ,  G11C11/405 ,  G11C16/04 ,  H01L27/118 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H01L21/822 ,  H01L27/06 ,  H01L29/78 ,  H10B12/00

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US12204212B2

公开(公告)日：2025-01-21

申请号：US18599770

申请日：2024-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Naoto Kusumoto

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12

Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.

公开(公告)号：US20250024737A1

公开(公告)日：2025-01-16

申请号：US18712749

申请日：2022-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryo HATSUMI ,  Hisao IKEDA ,  Daiki NAKAMURA ,  Takeya HIROSE ,  Yosuke TSUKAMOTO

IPC: H10K59/80 ,  G02B27/01 ,  G09G3/3275 ,  H10K59/65

Abstract: An electronic device with low power consumption is provided. The electronic device includes a first pixel portion and a second pixel portion. A plurality of first pixels are arranged in the first pixel portion. The second pixel portion includes a first region where a plurality of second pixels are arranged and a second region where a plurality of third pixels are arranged. The second region is provided to surround the first region. The first pixel includes a first light-emitting element, the second pixel includes a light-receiving element, and the third pixel includes a second light-emitting element. The area occupied by one of the first pixels is smaller than the area occupied by one of the third pixels.

公开(公告)号：US20250023362A1

公开(公告)日：2025-01-16

申请号：US18711808

申请日：2022-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi OSADA ,  Tetsuya KAKEHATA ,  Yosuke TSUKAMOTO ,  Shigeru ONOYA ,  Noboru INOUE ,  Shunpei YAMAZAKI

IPC: H02J7/00 ,  B60R25/045 ,  B62J43/13 ,  B62J43/16 ,  H04L9/40 ,  H04W12/06

Abstract: An electric vehicle and a system that easily recognize theft of a secondary battery of an electric vehicle typified by an electrically assisted bicycle and prevent the theft are provided. To prevent the theft of a secondary battery that can be detached from an electric vehicle typified by an electrically assisted bicycle or an electric motorcycle, mutual authentication between an electric vehicle body unit and a secondary battery unit is performed. The secondary battery unit at least includes a first memory portion storing first identification information, an authentication portion, and a wireless communication portion.

公开(公告)号：US20250020960A1

公开(公告)日：2025-01-16

申请号：US18896991

申请日：2024-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Makoto KANEYASU

IPC: G02F1/1343 ,  G02F1/13357 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  G09G3/36 ,  H01L27/12 ,  H01L29/786

Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided. The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.