Micro-electromechanical sensor
    21.
    发明授权

    公开(公告)号:US07047814B2

    公开(公告)日:2006-05-23

    申请号:US10198304

    申请日:2002-07-17

    CPC classification number: G01L1/148 G01L9/0073

    Abstract: A force or pressure transducer is disclosed. In one embodiment, the transducer has a substrate, a dielectric material disposed on the substrate, a spacing member disposed on the dielectric material, and a resilient element disposed on the dielectric material and the spacing member. A portion of the resilient element is separated from the dielectric material, and a portion of the resilient element is in contact with the dielectric material. The contact area between the resilient element and the dielectric material varies in response to movement of the resilient element. Changes in the contact area alter the capacitance of the transducer, which can be measured by circuit means.

    Pressure sensor and manufacturing method thereof
    23.
    发明申请
    Pressure sensor and manufacturing method thereof 失效
    压力传感器及其制造方法

    公开(公告)号:US20020092356A1

    公开(公告)日:2002-07-18

    申请号:US10047627

    申请日:2002-01-14

    CPC classification number: G01L9/0073 G01L1/148

    Abstract: It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1null1019 cmnull3 and less than 9null1019 cmnull3. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per nullm2, and preferably equal to or less than one per nullm2. As a result, the pressure durability of the diaphragm is greatly improved.

    Abstract translation: 本发明的目的是提供一种具有比常规传感器更高的耐压耐久性的触摸模式电容式压力传感器。 在本发明中,触摸模式电容式压力传感器具有由硼掺杂硅制成的光阑,并且隔膜顶面的硼浓度等于或大于1×10 19 cm -3且小于9×10 19 cm -3。 此外,在本发明中,触摸模式电容式压力传感器具有通过掺杂杂质和各向异性蚀刻而制成的导电隔膜,并且隔膜顶面上的蚀刻坑密度等于或小于每mum2的五个,优选地 等于或小于一个每mum2。 结果,隔膜的耐久性大大提高。

    Shear force microsensor
    24.
    发明授权
    Shear force microsensor 失效
    剪力微传感器

    公开(公告)号:US06341532B1

    公开(公告)日:2002-01-29

    申请号:US09667511

    申请日:2000-09-22

    CPC classification number: G01L1/148 G01N11/02 G01P5/02

    Abstract: A micro-dimensional sensor measures the shear force, both in magnitude and direction, at the surface of a solid boundary as a fluid flows over that boundary. The sensor is a micro-mechanical capacitor-transducer system that includes a micro-dimensioned floating upper plate above a fixed lower plate supported on a substrate. The floating upper plate is mounted and held over the substrate by a number of zig-zap form supporting arms. The flow passing over the upper plate displaces the upper plate in a downstream direction, which results in a measurable change of the capacitance in the capacitor-transducer system. The direction and magnitude of the shear forces can then be obtained from the measured capacitance through specially designed circuitry.

    Abstract translation: 当流体流过该边界时,微尺寸传感器在固体边界的表面处测量幅度和方向上的剪切力。 传感器是一种微机电容换能器系统,其中包括一个支撑在基板上的固定下板上方的微尺寸浮动上板。 浮动的上板通过多个Z形支撑臂安装并保持在基板上。 通过上板的流动使上板在下游方向上移动,这导致电容器 - 换能器系统中的电容的可测量的变化。 然后可以通过专门设计的电路从测量的电容获得剪切力的方向和大小。

    Sensor with separate actuator and sense fingers
    25.
    再颁专利
    Sensor with separate actuator and sense fingers 有权
    传感器带有独立的执行器和感应指

    公开(公告)号:USRE36498E

    公开(公告)日:2000-01-18

    申请号:US172541

    申请日:1998-10-14

    Abstract: A micromachined force sensor containing separate sensing and actuator structures. A member is suspended above the substrate so that it is movable along an axis in response to a force. The member includes a set of parallel sense fingers and a separate set of parallel force fingers. The sense fingers are positioned between fingers of two sense plates, to form a first differential capacitor, whose capacitance changes when the member moves in response to a force along the axis. The change in capacitance induces a sense signal on the member, which permits the measurement of the magnitude and duration of the force. The force fingers are positioned between fingers of two actuator plates, to form a second differential capacitor. The sense signal can be used to provide feedback to the second differential capacitor to generate different electrostatic forces between the force fingers and the two actuator plates, to offset the force applied along the preferred axis. Limit stops limit the movement of the member to less than the distance between the electrodes of the differential capacitors, to prevent contact between the electrodes. Additional fingers be positioned around the differential capacitors to minimize parasitic capacitances.

    Abstract translation: 包含单独的传感和致动器结构的微加工力传感器。 构件悬挂在基板上方,使得其可以响应于力而沿轴线移动。 该构件包括一组平行的手指和一组单独的平行的手指。 感测指状物定位在两个感测板的指状物之间,以形成第一差分电容器,当构件响应于沿着轴的力移动时,其电容发生变化。 电容的变化会引起元件上的感应信号,这样可以测量力的大小和持续时间。 力指定位于两个致动器板的指状物之间,以形成第二差分电容器。 感测信号可以用于向第二差分电容器提供反馈以在力指和两个致动器板之间产生不同的静电力,以抵消沿着优选轴施加的力。 限制停止将构件的移动限制为小于差分电容器的电极之间的距离,以防止电极之间的接触。 附加指状物位于差分电容器周围,以最小化寄生电容。

    Silicon membrane micro-scale
    27.
    发明授权
    Silicon membrane micro-scale 失效
    硅膜微尺度

    公开(公告)号:US4960177A

    公开(公告)日:1990-10-02

    申请号:US201881

    申请日:1988-06-03

    CPC classification number: G01L1/148 G01G7/06 G01L1/18

    Abstract: This invention relates to force responsive transducers and more particularly concerns a micromachined, solid state micro-scale. The device consists of a central silicon platorm surrounded and supported by a thin silicon membrane. The silicon substrate is placed over an aluminum pad recessed into a well on a supporting glass substrate. The micro-scale responds to a static method of measuring force, similar to a spring scale. A gravitational acceleration vector acting on a mass placed onto the device produces a force known as weight. The weight mechanically displaces the silicon platform and membrane which is transduced to an electrical signal where a change in capacitance is measured. Geometry of the silicon platform, membrane and glass well depth may be used to affect the linearity, sensitivity and range of measurement of the micro-scale.

    Abstract translation: 本发明涉及力响应传感器,并且更具体地涉及微加工的固态微尺度。 该装置由被薄的硅膜包围和支撑的中心硅板。 将硅衬底放置在凹入到支撑玻璃衬底上的阱中的铝垫上。 微尺度响应于静态的测量力的方法,类似于弹簧秤。 作用在放置在设备上的质量块上的重力加速度矢量产生称为重量的力。 该重量将硅平台和膜机械地移位,该平台和膜被传导到测量电容变化的电信号。 硅平台的几何形状,膜和玻璃深度可用于影响微尺度的线性度,灵敏度和测量范围。

    Method for fabricating a silicon force transducer
    28.
    发明授权
    Method for fabricating a silicon force transducer 失效
    硅力传感器的制造方法

    公开(公告)号:US4808549A

    公开(公告)日:1989-02-28

    申请号:US199892

    申请日:1988-05-27

    CPC classification number: G01L9/0042 G01L1/148 H01L27/20 Y10S148/012

    Abstract: A silicon substrate having {100} nominal crystalline planes is anisotropically etched to form a pair of V-shaped grooves along the top planar surface and a first plate between the grooves. The top planar surface is then doped to form a conductor region including the first plate. A substantially uniform layer of a selectively etchable material, such as silicon oxide, is then grown over the grooved top planar surface. A layer of doped silicon is grown over the silicon oxide layer to define a pair of V-shaped members opposite the pair of grooves. The silicon layer is then partially etched to form a second plate connected to the silicon layer through a pair of V-shaped members. Both the second plate and the pair of V-shaped members are then suspended over the first capacitive plate by sacrificially etching a portion of the selectively etchable layer. Electronic circuitry is then coupled to both the doped silicon layer and the doped substrate to detect changes in capacitance between the first and second plates in response to an applied force, such as airflow, to be measured.

    Batch method of making miniature capacitive force transducers assembled
in wafer form
    29.
    发明授权
    Batch method of making miniature capacitive force transducers assembled in wafer form 失效
    制造以晶圆形式组装的微型电容力换能器的批量方法

    公开(公告)号:US4732647A

    公开(公告)日:1988-03-22

    申请号:US875598

    申请日:1986-06-18

    Applicant: Harry E. Aine

    Inventor: Harry E. Aine

    Abstract: A batch method for fabricating semiconductive capacitive force transducers is disclosed wherein a first wafer of silicon or fused silica is recessed by etching to define a array of force transducer structures, each including a deflectable portion supported from a surrounding frame portion. The first wafer is thermoelectrically bonded between a pair of glass or quartz plates, each plate having an array of electrode structures for capacitively sensing deflection of the individual force transducers. Each electrode structure includes a lead portion passing over the frame portio of the transducers and being spaced from the frame to provide a gas communication passageway through the frame to the capacitive gap between the electrode structure and the deflectable portion of each transducer. The composite assembled wafers are notched along cleave lines generally outlining the individual transducer structures. The notching along the cleave lines is preferably performed by sawing or scribing with the saw kerf or scribe lines extending only partially through the plates so as not to contaminate the individual transducer devices. The individual transducer structures are then cleaved from the composite wafer so as not to introduce contaminants into the individual transducers.

    Abstract translation: 公开了一种用于制造半导体电容力换能器的分批方法,其中硅或熔融石英的第一晶片通过蚀刻凹陷以限定力传感器结构的阵列,每个力传感器结构包括从周围框架部分支撑的可偏转部分。 第一晶片被热电接合在一对玻璃或石英板之间,每个板具有电极结构阵列,用于电容地感测各个力传感器的偏转。 每个电极结构包括引导部分,其穿过换能器的框架端口并与框架间隔开,以提供穿过框架的气体连通通道到电极结构和每个换能器的可偏转部分之间的电容间隙。 复合组装的晶片沿着通常概述各个换能器结构的解剖线切口。 沿着切割线的切口优选通过锯切或划线来实现,锯切或划线仅部分延伸穿过板,以便不污染各个换能器装置。 然后将各个换能器结构从复合晶片切割成不会将污染物引入各个换能器中。

Patent Agency Ranking