Abstract:
A method for manufacturing a physical quantity detector is for a physical quantity detector including a flat frame-like base part, a flat plate-like moving part which is arranged inside the base part and has one end thereof connected to the base part via a joint part, and a physical quantity detection element laid on the base part and the moving part. The method includes: integrally forming the base part, the joint part, the moving part, and a connecting part which is provided on a free end side of the moving part and connects the base part and the moving part to each other; laying and fixing the physical quantity detection element on the base part and the moving part; and cutting off the connecting part.
Abstract:
A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.
Abstract:
A method for correcting a mask pattern used for dry-etching an object with higher accuracy, and for manufacturing an acceleration sensor and an angular velocity sensor. The object is first etched by a dry-etching process using an uncorrected reference mask pattern. Then, distribution of the size of expansion of a tapered portion formed in a surface of the object is measured. Thereafter, the measured distribution is approximated by using a quadratic curve (Y=AX2+B) so as to determine A and B. Consequently, an amount t of correction for the tapered portion, which is expressed by the following equation (1) and related to a width of an opening of the mask pattern in a position at a distance r from a center of the object to be etched, can be set. In this way, the correction for the tapered portion can be carried out. t=(Ar2+B)/2 (1)
Abstract:
A device is provided for a detecting external force applied to piezoelectric piece. A crystal piece is cantilever-supported in a container. Excitation electrodes are formed on an upper face and lower face, respectively. A movable electrode, connected via a lead-out electrode to the excitation electrode, is formed on the lower face side at a front end of the crystal piece. A fixed electrode is provided on a bottom portion of the container to face this movable electrode. The excitation electrode on the upper face side and the fixed electrode are connected to an oscillation circuit. When the crystal piece bends in response to an applied external force, capacitance between the movable electrode and fixed electrode, changes. This capacitance change results in a corresponding change in oscillation frequency of the crystal piece.
Abstract:
A method for evaluating and/or compensating the acceleration offset in a combined accelerometer and gyroscope, wherein the evaluation or compensation is based on a quadrature signal delivered by the accelerometer.
Abstract:
An acceleration sensor is formed using an etched layer sandwiched between first and second substrates. In this case, a structure including a movable portion which is displaceable in the thickness direction of the substrates, and a support frame are formed in the etched layer. In addition, first and second fixed electrodes are formed on the first and second substrates, respectively, at a position facing the movable portion. Further, a remaining sacrificial layer is provided on the substrate by leaving a portion of a second sacrificial layer when a first sacrificial layer is entirely etched away. Therefore, when the first sacrificial layer is etched away, corrosion of the structure and the support beams is prevented because the second sacrificial layer is preferentially corroded as compared to the structure.
Abstract:
A driving mass of an integrated microelectromechanical structure is moved with a rotary motion about an axis of rotation, and a sensing mass is connected to the driving mass via elastic supporting elements so as to perform a detection movement in the presence of an external stress. The driving mass is anchored to a first anchorage arranged along the axis of rotation by first elastic anchorage elements. The driving mass is also coupled to a pair of further anchorages positioned externally thereof and coupled to opposite sides with respect to the first anchorage by further elastic anchorage elements; the elastic supporting elements and the first and further elastic anchorage elements render the driving mass fixed to the first sensing mass in the rotary motion, and substantially decoupled from the sensing mass in the detection movement, the detection movement being a rotation about an axis lying in a plane.
Abstract:
An accelerometer with improved immunity to sensitivity drift is disclosed. In some embodiments, the accelerometer comprises an actuator that induces a known acceleration on a reference frame. A signal based on this known acceleration is used to calibrate the accelerometer to mitigate the effects due to at least one of sensitivity drift, D.C. bias drift, sense laser wavelength drift, and resonant frequency drift.
Abstract:
To provide a tilt angle sensor that is capable of detecting acceleration, a tilt angle, and the like of a device to which the tilt sensor angle is mounted, and also capable of reducing the size and the cost with a simple structure. The tilt angle sensor comprises: a spring member having a fixed end a free end that has a flexibility to be bent at least in one direction; a magnetic field generating device for generating a magnetic field, which is mounted at the free end of the spring member; a magnetic field detecting device provided by facing the magnetic field generating device for detecting a direction of the magnetic field generated by the magnetic field generating device; and a damping device for giving a damping force to a bending action of the spring member.
Abstract:
A hermetically packaged G-switch includes a MEMS structure having a bottom substrate layer, a top device layer and an intermediate oxide layer. A mass disposed in the top device layer is connected to one, two or three anchor portions using spring arms. One end of a spring arm is connected to the mass and another end to an anchor portion. The connection to the anchor portion includes a T shaped arrangement, which has a torsional spring cross piece connected to the spring arm. A cap containing a conductive pad is hermetically sealed to the MEMS structure. When a predetermined acceleration is attained, the mass makes electrical contact with the conductive pad to close the G-switch.