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    Organic photovoltaic devices comprising solution-processed substituted metal-phthalocyanines and exhibiting near-IR photo-sensitivity
    22.
    发明授权
    Organic photovoltaic devices comprising solution-processed substituted metal-phthalocyanines and exhibiting near-IR photo-sensitivity 有权
    包含溶液处理的取代金属酞菁并具有近红外光敏性的有机光伏器件

    公开(公告)号：US09505770B2

    公开(公告)日：2016-11-29

    申请号：US13635324

    申请日：2011-04-11

    Applicant: Dominic V. McGrath ,  Mayank Mayukh ,  Diogenes Placencia ,  Neal R. Armstrong

    Inventor： Dominic V. McGrath ,  Mayank Mayukh ,  Diogenes Placencia ,  Neal R. Armstrong

    IPC: H01L51/46 ,  C07D487/22 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/42

    CPC classification number: C07D487/22 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0078 ,  H01L51/424 ,  H01L51/4246 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

    Abstract: Organic photovoltaic (OPV) devices are disclosed. An exemplary device has first and second electrodes and an organic, photovoltaically active zone located between the first and second electrodes. The photovoltaically active zone includes an organic electron-donor material and an organic electron-acceptor material. The electron-donor material includes one or more trivalent- or tetravalent-metal phthalocyanines with alkylchalcogenide ring substituents, and is soluble in at least one organic solvent. This solubility facilitates liquid-processability of the donor material, including formation of thin-films, on an unlimited scale to form planar and bulk heterojunctions in organic OPVs. These donor materials are photovoltaically active in both visible and near-IR wavelengths of light, enabling more of the solar spectrum, for example, to be applied to producing electricity. Also disclosed are methods for producing the metalated phthalocyanines and actual devices.

    Abstract translation: 公开了有机光伏（OPV）器件。 示例性装置具有位于第一和第二电极之间的第一和第二电极以及有机的光伏活性区。 光伏活性区包括有机电子给体材料和有机电子受体材料。 电子给体材料包括一种或多种具有烷基硫属化物环取代基的三价或四价金属酞菁，并且可溶于至少一种有机溶剂。 该溶解度促进了供体材料的液体加工性，包括在无限尺度上形成薄膜，以在有机OPV中形成平面和体异质结。 这些供体材料在可见光和近红外波长的光线中都是光伏活性的，从而能够将更多的太阳能光谱应用于生产电力。 还公开了制备金属化酞菁的方法和实际装置。

    Top-gate bottom-contact organic transistor
    23.
    发明授权
    Top-gate bottom-contact organic transistor 有权
    顶栅底接触有机晶体管

    公开(公告)号：US09496315B2

    公开(公告)日：2016-11-15

    申请号：US12859496

    申请日：2010-08-19

    Applicant: Stephen R. Forrest ,  Xin Xu ,  Christopher Kyle Renshaw

    Inventor： Stephen R. Forrest ,  Xin Xu ,  Christopher Kyle Renshaw

    IPC: H01L51/44 ,  H01L27/30 ,  B82Y10/00 ,  H01L27/28 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42

    CPC classification number: H01L27/307 ,  B82Y10/00 ,  H01L27/283 ,  H01L51/0046 ,  H01L51/0078 ,  H01L51/0541 ,  H01L51/105 ,  H01L51/424

    Abstract: Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.

    Abstract translation: 提供了顶栅，底接触有机薄膜晶体管。 晶体管可以包括金属双层电极，以帮助器件内的电荷移动。 在一个实施例中，有机晶体管包括设置在衬底的第一区域上的漏电极和源电极，设置在漏电极和源电极上并与漏电极和源电极直接物理接触的过渡金属氧化物层，有机优先导孔 沟道层设置在金属氧化物之上，并且在漏电极和源电极之间，以及设置在沟道上的栅电极。

    COMPLEMENTARY TUNNELING FET DEVICES AND METHOD FOR FORMING THE SAME
    24.
    发明申请
    COMPLEMENTARY TUNNELING FET DEVICES AND METHOD FOR FORMING THE SAME 有权
    补充隧道式FET器件及其形成方法

    公开(公告)号：US20160268401A1

    公开(公告)日：2016-09-15

    申请号：US15036058

    申请日：2013-12-26

    Applicant: INTEL CORPORATION

    Inventor： Aleksandar ALEKSOV

    IPC: H01L29/66 ,  H01L51/05 ,  H01L51/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/24 ,  H01L29/78

    CPC classification number: H01L29/66977 ,  H01L21/8258 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/24 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7869 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0078 ,  H01L51/0533 ,  H01L51/0554 ,  H01L51/0562

    Abstract: Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.

    Abstract translation: 描述了使用氧化物和/或有机半导体材料形成互补隧道场效应晶体管（TFET）的装置。 一种类型的TFET包括：衬底; 在衬底上形成的掺杂的第一区，具有选自周期表的III-V族，IV-IV族和IV族的p型材料; 掺杂的第二区域，形成在衬底上方，具有透明氧化物n型半导体材料; 以及耦合到掺杂的第一和第二区域的栅极堆叠。 另一类型的TFET包括：衬底; 掺杂的第一区域，形成在所述衬底上方，具有p型有机半导体材料; 掺杂的第二区域，形成在衬底上方，具有n型氧化物半导体材料; 以及耦合到掺杂源极和漏极区的栅极叠层。 在另一个示例中，TFET是使用有机区域的仅有机半导体材料制成的。

    Diode/Superionic Conductor/Polymer Memory Structure
    28.
    发明申请
    Diode/Superionic Conductor/Polymer Memory Structure 有权
    二极管/超导体/聚合物存储器结构

    公开(公告)号：US20160087007A1

    公开(公告)日：2016-03-24

    申请号：US14965660

    申请日：2015-12-10

    Applicant: Micron Technology, Inc.

    Inventor： Kristy A. Campbell

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/285 ,  B82Y10/00 ,  G11C13/0011 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/28 ,  H01L27/286 ,  H01L29/8615 ,  H01L45/1608 ,  H01L45/1683 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0041 ,  H01L51/0078 ,  H01L51/0591 ,  H01L51/102

    Abstract: A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

    Abstract translation: 通过在底部电极上提供第一金属 - 硫族化物层来形成具有内置二极管的共轭聚合物层。 随后，第二金属 - 硫族化物层设置在第一金属 - 硫属化物层上并与其接触。 第一金属 - 硫族化物层具有第一导电类型，第二金属 - 硫族化物层具有第二导电类型。 第一和第二金属 - 硫族化物层之间的接触平面形成内置二极管的p-n结。 然后将聚合物层选择性地沉积在第二金属 - 硫族化物层上。 第二金属 - 硫族化物层向聚合物层提供离子以改变其电阻率。 然后在聚合物层上提供顶部电极。 示例性存储单元可以具有以下堆叠结构：第一电极/ n型半导体/ p型半导体/共轭聚合物/第二电极。

    Organic devices, organic electroluminescent devices, organic solar cells, organic FET structures and production method of organic devices
    30.
    发明授权
    Organic devices, organic electroluminescent devices, organic solar cells, organic FET structures and production method of organic devices 有权
    有机器件，有机电致发光器件，有机太阳能电池，有机FET结构和有机器件的生产方法

    公开(公告)号：US09196850B2

    公开(公告)日：2015-11-24

    申请号：US10983857

    申请日：2004-11-08

    Applicant: Toshio Matsumoto ,  Akira Yokoi ,  Takeshi Nakada ,  Norifumi Kawamura ,  Junji Kido

    Inventor： Toshio Matsumoto ,  Akira Yokoi ,  Takeshi Nakada ,  Norifumi Kawamura ,  Junji Kido

    IPC: H01L51/54 ,  H01L51/42 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

    CPC classification number: H01L51/424 ,  H01L51/0051 ,  H01L51/0067 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0079 ,  H01L51/0081 ,  H01L51/0089 ,  H01L51/4253 ,  H01L51/5048 ,  H01L51/5052 ,  H01L51/5068 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5278 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    Abstract: An organic device has a hole current-electron current conversion layer which comprises a laminate of an electron transportation section and a hole transportation section. The electron transportation section includes a charge transfer complex formed upon an oxidation-reduction reaction between a reduced low work function metal and an electron-accepting organic compound, the reduced metal being produced upon an in-situ thermal reduction reaction caused upon contact, through lamination or mixing by co-deposition, of an organic metal complex compound or an inorganic compound containing at least one metal ion selected from ions of low work function metals having a work function of not more than 4.0 eV, and a thermally reducible metal capable of reducing a metal ion contained in the organic metal complex compound or the inorganic compound in vacuum to the corresponding metal state, and the electron transportation section having the electron-accepting organic compound in the state of radical anions. The hole transportation section includes an organic compound having an ionization potential of less than 5.7 eV and an electron-donating property and an inorganic or organic substance capable of forming a charge transfer complex upon its oxidation-reduction reaction with the organic compound, the organic compound and the inorganic or organic substance being contacted through lamination or mixing, and the electron-donating organic compound is in the state of radical cations.

    Abstract translation: 有机器件具有空穴电流 - 电子电流转换层，其包括电子传输部分和空穴传输部分的叠层。 电子传输部分包括在还原的低功函数金属和受电子有机化合物之间的氧化还原反应中形成的电荷转移络合物，所述还原金属在通过层压产生的原位热还原反应时产生 或通过共沉积混合有机金属络合物或含有至少一种金属离子的无机化合物，所述金属离子选自具有不大于4.0eV的功函数的低功函数金属的离子，以及能够还原的可还原金属 包含在有机金属络合物或无机化合物中的金属离子在真空中成为相应的金属状态，电子传输部分具有处于自由基阴离子状态的电子接受有机化合物。 空穴传输部分包括具有小于5.7eV的电离电位和给电子性的有机化合物和能够在与有机化合物进行氧化还原反应时形成电荷转移络合物的无机或有机物质，有机化合物 并且无机或有机物质通过层压或混合而接触，并且给电子有机化合物处于自由基阳离子的状态。

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